Etching solution composition, array substrate for display device and manufacturing method thereof

Abstract

The invention relates to an etchant composition, an array substrate for a display device, and a manufacturing method thereof. More specifically, the invention relates to an etchant composition for a copper-based metal film, including hydrogen peroxide, fluorine compound, 5-methyl-1H-tetrazole, a water soluble compound in which one molecule has a nitrogen atom and hydroxy, sodium tripolyphosphate / disulfate, polyols type surfactant, and water with certain contents, an array substrate for a display device by employing the above etchant composition, and a manufacturing method thereof.

Description

technical field

[0001] The present invention relates to a method for manufacturing an array substrate for a display device, and more specifically, relates to an etchant composition for a copper-based metal film, an array substrate for a display device using the above etchant composition, and a method for manufacturing the same. Background technique

[0002] In a semiconductor device, the process of forming metal wiring on a substrate generally includes steps using the following processes: a metal film forming process using sputtering or the like; photoresist coating, exposure, and development in selected areas using light; A resist formation process; and an etching process, including cleaning processes before and after individual unit processes, and the like. Such an etching step means a step of leaving a metal film on a selected region by using a photoresist as a mask, and generally, dry etching using plasma or the like or wet etching using an etchant composition is used. ...

Examples

experiment example 1

[0116] Experimental example 1. Etching profile measurement

[0117] Put the etching solution compositions of the above-mentioned Examples 1 to 12 and Comparative Examples 1 to 8 respectively in the experimental equipment (model name: ETCHER (TFT), SEMES company) of the jet etching method, and set the temperature of the etching solution composition to It is about 33°C and heated. The total etching time can be changed according to the etching temperature, and it usually takes about 50 to 80 seconds in the LCD etching process.

[0118] After placing the substrate, start spraying. When the etching time reaches 50 to 80 seconds, the substrate is taken out and cleaned with deionized water, and then dried with a hot air drying device. After cleaning and drying, the board|substrate was cut|disconnected, and the cross-section was measured using the scanning electron microscope (SEM: Hitachi company product, model name S-4700). The results are described in Table 2 below.

[0119] ...

experiment example 2

[0124] Experimental example 2. Measurement of side etch and taper angle with changes in the number of substrates processed

[0125] Put the etching solution compositions of the above-mentioned Examples 1 to 12 and Comparative Examples 1 to 8 respectively in the experimental equipment (model name: ETCHER (TFT), SEMES company) of the jet etching method, and set the temperature of the etching solution composition to It is about 33°C and heated. The total etching time can be changed according to the etching temperature, and it usually takes about 50 to 80 seconds in the LCD etching process.

[0126] Regarding the measurement of the change in side erosion and the measurement of the taper angle according to the number of substrates processed, the Mo-Ti contained in the film quality is injected in such a way that the etching solution composition changes with the metal concentration (ppm) in the substrate etching composition. and Cu powder. In the case of 300ppm, 30ppm of Mo-Ti po...

experiment example 3

[0131] Experimental example 3. Measurement of the exothermic temperature of the etchant composition varying with the number of sheets processed

[0132] Put the etching solution compositions of the above-mentioned Examples 1 to 12 and Comparative Examples 1 to 8 respectively in the experimental equipment (model name: ETCHER (TFT), SEMES company) of the jet etching method, and set the temperature of the etching solution composition to It is about 33°C and heated. The total etching time can be changed according to the etching temperature, and it usually takes about 50 to 80 seconds in the LCD etching process.

[0133] Spraying was started after placing the substrate, and the temperature of the composition at which the concentration of copper ions in the etching solution composition was 7,000 ppm was measured and described in 2 below.

technical field

[0001] The present invention relates to a method for manufacturing an array substrate for a display device, and more specifically, relates to an etchant composition for a copper-based metal film, an array substrate for a display device using the above etchant composition, and a method for manufacturing the same. Background technique

[0002] In a semiconductor device, the process of forming metal wiring on a substrate generally includes steps using the following processes: a metal film forming process using sputtering or the like; photoresist coating, exposure, and development in selected areas using light; A resist formation process; and an etching process, including cleaning processes before and after individual unit processes, and the like. Such an etching step means a step of leaving a metal film on a selected region by using a photoresist as a mask, and generally, dry etching using plasma or the like or wet etching using an etchant composition is used. ...

Examples

experiment example 1

[0116] Experimental example 1. Etching profile measurement

[0117] Put the etching solution compositions of the above-mentioned Examples 1 to 12 and Comparative Examples 1 to 8 respectively in the experimental equipment (model name: ETCHER (TFT), SEMES company) of the jet etching method, and set the temperature of the etching solution composition to It is about 33°C and heated. The total etching time can be changed according to the etching temperature, and it usually takes about 50 to 80 seconds in the LCD etching process.

[0118] After placing the substrate, start spraying. When the etching time reaches 50 to 80 seconds, the substrate is taken out and cleaned with deionized water, and then dried with a hot air drying device. After cleaning and drying, the board|substrate was cut|disconnected, and the cross-section was measured using the scanning electron microscope (SEM: Hitachi company product, model name S-4700). The results are described in Table 2 below.

[0119] ...

experiment example 2

[0124] Experimental example 2. Measurement of side etch and taper angle with changes in the number of substrates processed

[0125] Put the etching solution compositions of the above-mentioned Examples 1 to 12 and Comparative Examples 1 to 8 respectively in the experimental equipment (model name: ETCHER (TFT), SEMES company) of the jet etching method, and set the temperature of the etching solution composition to It is about 33°C and heated. The total etching time can be changed according to the etching temperature, and it usually takes about 50 to 80 seconds in the LCD etching process.

[0126] Regarding the measurement of the change in side erosion and the measurement of the taper angle according to the number of substrates processed, the Mo-Ti contained in the film quality is injected in such a way that the etching solution composition changes with the metal concentration (ppm) in the substrate etching composition. and Cu powder. In the case of 300ppm, 30ppm of Mo-Ti po...

experiment example 3

[0131] Experimental example 3. Measurement of the exothermic temperature of the etchant composition varying with the number of sheets processed

[0132] Put the etching solution compositions of the above-mentioned Examples 1 to 12 and Comparative Examples 1 to 8 respectively in the experimental equipment (model name: ETCHER (TFT), SEMES company) of the jet etching method, and set the temperature of the etching solution composition to It is about 33°C and heated. The total etching time can be changed according to the etching temperature, and it usually takes about 50 to 80 seconds in the LCD etching process.

[0133] Spraying was started after placing the substrate, and the temperature of the composition at which the concentration of copper ions in the etching solution composition was 7,000 ppm was measured and described in 2 below.

Images