Etching solution composition, array substrate for display device and manufacturing method thereof

A technology for array substrates and display devices, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of inability to lengthen the service period of the etching solution, reduce the accuracy and efficiency of the process, and slow the etching speed of the etching solution. Small taper angle variation, efficient etching process, and excellent etching speed

Active Publication Date: 2019-02-19
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to etch a multilayer film of such a copper-based metal film, there is a disadvantage that two different etching solutions for etching each metal film must be used.
[0005] In addition, the etching speed of the conventional etching solution is slow, which will increase the process time (process time), so when the thickness is about For thicker metal films, there is a problem of poor etching profile
[0006] Furthermore, conventionally, as the cumulative number of films treated with the etchant increases, the inclination angle of the etching pattern changes, and there are problems such as poor etching straightness and poor etching profile, so it is not possible to extend the service life of the etchant
Especially in the case of etching a thick film, if the taper angle is large, there is a problem of poor step coverage during the subsequent process, which reduces the accuracy and efficiency of the process.
In addition, when the concentration of metal ions in the etchant increases, the risk of explosion due to heat generation increases, so an improvement on this is required

Method used

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  • Etching solution composition, array substrate for display device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0116] Experimental example 1. Etching profile measurement

[0117] Put the etching solution compositions of the above-mentioned Examples 1 to 12 and Comparative Examples 1 to 8 respectively in the experimental equipment (model name: ETCHER (TFT), SEMES company) of the jet etching method, and set the temperature of the etching solution composition to It is about 33°C and heated. The total etching time can be changed according to the etching temperature, and it usually takes about 50 to 80 seconds in the LCD etching process.

[0118] After placing the substrate, start spraying. When the etching time reaches 50 to 80 seconds, the substrate is taken out and cleaned with deionized water, and then dried with a hot air drying device. After cleaning and drying, the board|substrate was cut|disconnected, and the cross-section was measured using the scanning electron microscope (SEM: Hitachi company product, model name S-4700). The results are described in Table 2 below.

[0119] ...

experiment example 2

[0124] Experimental example 2. Measurement of side etch and taper angle with changes in the number of substrates processed

[0125] Put the etching solution compositions of the above-mentioned Examples 1 to 12 and Comparative Examples 1 to 8 respectively in the experimental equipment (model name: ETCHER (TFT), SEMES company) of the jet etching method, and set the temperature of the etching solution composition to It is about 33°C and heated. The total etching time can be changed according to the etching temperature, and it usually takes about 50 to 80 seconds in the LCD etching process.

[0126] Regarding the measurement of the change in side erosion and the measurement of the taper angle according to the number of substrates processed, the Mo-Ti contained in the film quality is injected in such a way that the etching solution composition changes with the metal concentration (ppm) in the substrate etching composition. and Cu powder. In the case of 300ppm, 30ppm of Mo-Ti po...

experiment example 3

[0131] Experimental example 3. Measurement of the exothermic temperature of the etchant composition varying with the number of sheets processed

[0132] Put the etching solution compositions of the above-mentioned Examples 1 to 12 and Comparative Examples 1 to 8 respectively in the experimental equipment (model name: ETCHER (TFT), SEMES company) of the jet etching method, and set the temperature of the etching solution composition to It is about 33°C and heated. The total etching time can be changed according to the etching temperature, and it usually takes about 50 to 80 seconds in the LCD etching process.

[0133] Spraying was started after placing the substrate, and the temperature of the composition at which the concentration of copper ions in the etching solution composition was 7,000 ppm was measured and described in 2 below.

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Abstract

The invention relates to an etchant composition, an array substrate for a display device, and a manufacturing method thereof. More specifically, the invention relates to an etchant composition for a copper-based metal film, including hydrogen peroxide, fluorine compound, 5-methyl-1H-tetrazole, a water soluble compound in which one molecule has a nitrogen atom and hydroxy, sodium tripolyphosphate / disulfate, polyols type surfactant, and water with certain contents, an array substrate for a display device by employing the above etchant composition, and a manufacturing method thereof.

Description

technical field [0001] The present invention relates to a method for manufacturing an array substrate for a display device, and more specifically, relates to an etchant composition for a copper-based metal film, an array substrate for a display device using the above etchant composition, and a method for manufacturing the same. Background technique [0002] In a semiconductor device, the process of forming metal wiring on a substrate generally includes steps using the following processes: a metal film forming process using sputtering or the like; photoresist coating, exposure, and development in selected areas using light; A resist formation process; and an etching process, including cleaning processes before and after individual unit processes, and the like. Such an etching step means a step of leaving a metal film on a selected region by using a photoresist as a mask, and generally, dry etching using plasma or the like or wet etching using an etchant composition is used. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18H01L21/768
CPCC23F1/18H01L21/76838
Inventor 金童基权五柄金镇成梁圭亨金炼卓
Owner DONGWOO FINE CHEM CO LTD
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