A method for preparing graphene by large-scale ultrasonic exfoliation and the application of graphene

Abstract

The invention provides a method for large-scale preparation of graphene through ultrasonic stripping and an application of the graphene. According to the method, graphite, which serves as a raw material, is enabled to flow in a tubular reactor at a high speed through a high-pressure and high-speed gas flow under a dry-state condition, and meanwhile, an ultrasonic amplitude lever is arranged in the tubular reactor, so that by using cavitation generated by the amplitude lever, during high-speed movement, on one hand, the graphite is subjected to powerful impact, on the other hand, the graphite is subjected to continuous and local cavitation under the action of the ultrasonic amplitude lever, and thus, the graphite is continuously stripped into the graphene layer by layer. A discharging opening of the tubular reactor is connected with a grader, stripped graphene is separated out, and unstripped large-grained graphite circularly enters a charging opening of the tubular reactor for re-stripping. The continuous, large-scale and high-efficiency preparation of the graphene through stripping is achieved. Further, the obtained graphene is complete in structure, has ultrahigh conductivity, heat conductivity and surface hydrophobicity, is applicable to glass and is used for achieving the effects of defogging and heating.

Description

technical field [0001] The invention belongs to the field of functional materials and nanometer materials, in particular to a method and application for large-scale production of graphene materials. Background technique [0002] Graphene is a carbon atom with sp 2 The honeycomb planar film formed by hybridization is a quasi-two-dimensional material with only one atomic layer thickness, so it is also called single atomic layer graphite. Its thickness is about 0.335nm, and there are different fluctuations depending on the preparation method. Usually, the height in the vertical direction is about 1nm, and the width in the horizontal direction is about 10nm to 25nm. It is all carbon crystals except diamond (zero-dimensional fullerene , one-dimensional carbon nanotubes, three-dimensional bulk graphite) basic structural unit. Graphene in a broad sense is actually multi-layer or thick-layer graphene, with a thickness of more than 10 layers and less than 10nm. The benzene ring str...

AI Technical Summary

Problems solved by technology

The chemical deposition method relatively increases the product area, and the crystal form is relatively complete, but the temperature is too high, and there is a certain risk

The 4H-SiC silicon surface epitaxial growth graphene method can increase the graphene area, but the substrate is expensive and the cost is high, so it is not suitable for mass production

However, due to the limited energy of ultrasonic stripping, the graphite needs to be fully intercalated and oxidized to be stripped, and the efficiency is low. At present, it is mainly used as an auxiliary method.