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Preparation method of double-face copper pouring ceramic substrate

A ceramic substrate and double-sided copper-clad technology, which is applied in the field of ceramic metallization, can solve the problems of unfavorable mechanical properties and surface state of the substrate, low production efficiency, and large thermal stress, so as to improve production efficiency and yield rate, and avoid product scrapping , to avoid the effect of thermal stress

Inactive Publication Date: 2017-07-07
SHANGHAI SHENHE THERMO MAGNETICS ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. Due to the different thermal expansion coefficients, a large thermal stress will be generated between copper and ceramics when one side is sintered, which is unfavorable to the mechanical properties of the substrate;
[0005] 2. The first sintered copper has to go through two high-temperature processes, and the copper grains continue to grow in the second high-temperature process, which is unfavorable to the mechanical properties and surface state of the substrate;
[0006] 3. The sintering time is twice that of single-sided sintering, the production efficiency is low, and the overall benefit is poor

Method used

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  • Preparation method of double-face copper pouring ceramic substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The first step: cleaning the ceramic substrate 3, the first copper sheet 1 and the second copper sheet 2. Use acid-base solution, deionized water, ultrasonic cleaning, spraying, pre-dehydration and other processes to clean the copper sheet and ceramic sheet substrate to remove impurities on the surface of the material.

[0029] The second step: annealing the copper sheet in a nitrogen atmosphere with an oxygen content of 1000 ppm, setting a temperature of 800°C, and an annealing treatment time of 15 minutes, to produce a certain thickness of oxide layer on the surface.

[0030] The third step: In a nitrogen atmosphere with an oxygen content of 40 ppm, stack the gasket 4 in the order of the first copper sheet 1, the ceramic substrate 3, and the second copper sheet 2 (the material of the gasket 4 is Inconel718, thickness 3mm, roughness 5μm) (the first copper piece 1 is placed on the gasket 4, the ceramic piece 3 is placed on the surface of the first copper piece 1, and the sec...

Embodiment 2

[0034] The first step: cleaning the ceramic substrate 3, the first copper sheet 1 and the second copper sheet 2. Use acid-base solution, deionized water, ultrasonic cleaning, spraying, pre-dehydration and other processes to clean the copper sheet and ceramic sheet substrate to remove impurities on the surface of the material.

[0035] The second step: annealing the copper sheet in a nitrogen atmosphere with an oxygen content of 950 ppm, setting a temperature of 900°C, and an annealing treatment time of 15 minutes to produce a certain thickness of oxide layer on the surface.

[0036] The third step: under a nitrogen atmosphere with an oxygen content of 30 ppm, stack the gasket 4 (material Y of gasket 4) in the order of the first copper sheet 1, the ceramic substrate 3, and the second copper sheet 2 2 O 3 , Thickness 2mm, roughness 4μm) (the first copper piece 1 is placed on the gasket 4, the ceramic piece 3 is placed on the surface of the first copper piece 1, and the second copper p...

Embodiment 3

[0040] The first step: cleaning the ceramic substrate 3, the first copper sheet 1 and the second copper sheet 2. Use acid-base solution, deionized water, ultrasonic cleaning, spraying, pre-dehydration and other processes to clean the copper sheet and ceramic sheet substrate to remove impurities on the surface of the material.

[0041] The second step: annealing the copper sheet in a nitrogen atmosphere with an oxygen content of 1100 ppm, setting a temperature of 780°C, and an annealing treatment time of 15 minutes to produce a certain thickness of oxide layer on the surface.

[0042] The third step: In a nitrogen atmosphere with an oxygen content of 35ppm, stack the gasket 4 (the material of the gasket 4 is nickel-cadmium alloy) in the order of the first copper sheet 1, the ceramic substrate 3, and the second copper sheet 2 , Thickness 1mm, roughness 3μm) (the first copper piece 1 is placed on the gasket 4, the ceramic piece 3 is placed on the surface of the first copper piece 1, a...

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Abstract

The invention relates to a preparation method of a double-face copper pouring ceramic substrate. The method comprises the steps that first, a ceramic sheet base material and copper sheets are washed; second, the copper sheets are subjected to annealing treatment in a first protective atmosphere, wherein the annealing temperature is 500-1060 DEG C, and the annealing treatment time is 1-30 min; third, in a second protective atmosphere, a first copper sheet, a ceramic sheet, a second copper sheet are stacked on a shim in sequence for sintering, wherein the sintering temperature is 1065-1082 DEG C, and the sintering time is 1-100 min; fourth, when the sintering ends, the double-face copper pouring ceramic substrate is obtained. According to the preparation method of the double-face copper pouring ceramic substrate, the ceramic sheet base material and the copper sheets are subjected to the sintering on the shim, wherein the shim does not react with the copper and low damage to the copper, so that the product obsolescence caused by the ceramic powder contamination is avoided; the double-face simultaneous sintering is achieved, so that the large heat stress generated by the single-face sintering and the continuous growth of copper grains in the second high temperature process can be avoided, and therefore the production efficiency and the yield are greatly improved.

Description

Technical field [0001] The invention belongs to the technical field of ceramic metallization, and particularly relates to a method for preparing a double-sided copper-clad ceramic substrate. Background technique [0002] With the development of power electronic devices, circuit board integration and operating frequency continue to increase, and heat dissipation has become a key issue that must be solved in the development of power electronic devices. Ceramic substrate is a packaging material for high-power electronic devices and integrated circuit substrates. It is a key supporting material in power electronics, electronic packaging and multi-chip modules. Its performance determines the heat dissipation efficiency and reliability of the module. [0003] In the current DBC double-sided copper-clad ceramic substrate, the copper on both sides of the ceramic plate is sintered in two separate steps. This process has the following shortcomings: [0004] 1. Due to the different coefficien...

Claims

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Application Information

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IPC IPC(8): C04B37/02
Inventor 李德善贺贤汉祝林翟甜蕾
Owner SHANGHAI SHENHE THERMO MAGNETICS ELECTRONICS CO LTD
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