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Ink for preparing dielectric layer of transistor, ink film and preparation method and applications thereof

A technology of transistors and dielectric layers, applied in the field of organic electronic device materials, can solve the problems of long annealing time, low ink film preparation efficiency, solution waste, etc., to improve production efficiency and production scale, excellent inkjet performance and film formation Performance, effect of preventing ink penetration

Inactive Publication Date: 2017-07-14
SHANGHAI MI FANG ELECTRONICS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the prior art, the ink configured with PVCN is used for spin-coating on the required substrate. There is no PVCN ink capable of inkjet printing. The spin-coating method will cause 98% of the solution to be wasted, and the annealing time is long, and the ink film Preparation efficiency is low

Method used

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  • Ink for preparing dielectric layer of transistor, ink film and preparation method and applications thereof
  • Ink for preparing dielectric layer of transistor, ink film and preparation method and applications thereof

Examples

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preparation example Construction

[0037] The second aspect of the present disclosure provides the preparation method of the ink provided by the first aspect of the present disclosure, the method comprising: mixing polyvinyl alcohol cinnamate, polymer additives, surfactants and organic solvents to obtain the ink.

[0038] According to the second aspect of the present disclosure, the method may further include: mixing the polyvinyl alcohol cinnamate, the polymer additive, the surfactant and the organic solvent, followed by stirring, ultrasonication and filtering in sequence. Stirring, ultrasonication and filtration are well known to those skilled in the art. Stirring and ultrasonication are used to disperse the components in the ink and reduce precipitation. The stirring time can be 0.1-2h, the ultrasonic frequency can be 20-40kHz, and the time can be 1- 10min; Filtration treatment is used to filter the precipitated part in the ink, prevent the nozzle of the printer from being blocked and improve the printing eff...

Embodiment 1

[0048] This example is used to illustrate the ink of the present disclosure and its preparation method.

[0049] Take 20mg of PVCN and add it into a glass bottle, then add 1mL of anisole solution, 5mg of polystyrene (Sigma Aldrich company, grade 41147, molecular weight 20,000) and 0.5mg of polyethylene glycol octylphenyl ether into the glass bottle. The active agent was magnetically stirred for 1 hour, then ultrasonicated for 5 minutes, and then filtered with a 0.22 μm organic filter head to obtain the ink of this example.

Embodiment 2-11

[0051] The composition and content of the ink are shown in Table 1, and the inks of Examples 2-11 were prepared by the steps of Example 1 respectively.

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Abstract

The invention relates to ink for preparing a dielectric layer of a transistor, an ink film and a preparation method and applications thereof. The ink contains poly(vinyl alcohol cinnamate), a polymer additive, a surfactant and an organic solvent; the weight-average molecular weight of the poly(vinyl alcohol cinnamate) is 10,000-50,000; the weight-average molecular weight of the polymer additive is 1,000-50,000, the polymer additive is selected from at least one of polystyrene and polymethyl methacrylate; relative to the 1mL of organic solvent, the content of the poly(vinyl alcohol cinnamate) is 1-50mg, the content of the polymer additive is 0.1-25mg, and the content of the surfactant is 0.05-1mg. The ink disclosed by the invention has excellent ink jetting performance and film forming performance, as well as crosslinking characteristic under ultraviolet light, the dielectric layer of a transistor prepared from ink can prevent ink from permeating, and also can barrier the electronic transmission, the insulating performance of the dielectric layer can be improved, and the dielectric layer of the organic film transistor can be prepared from ink by adopting an ink-jet printing method.

Description

technical field [0001] The present disclosure relates to the field of organic electronic device materials, in particular, to an ink for preparing a dielectric layer of a transistor, an ink film layer, a preparation method and application thereof. Background technique [0002] Organic thin film transistors are the core components of organic electronic devices, and its important device parameters include: carrier mobility, current switching ratio, threshold voltage and subthreshold slope. Organic electronic devices can be prepared by methods such as vacuum coating, solution spin coating, inkjet printing, and pattern imprinting. Compatible with substrates, can be processed at room temperature, and can be mass-produced in large areas. Among them, the inkjet printing method is one of the important ways to realize the large-area preparation of organic field effect transistors. [0003] Organic thin film transistors (Organic Thin Film Transistors, OTFTs) are a field effect transi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/30C09D11/36C09D11/106C09D11/107C09D11/033H01L51/05
CPCC09D11/033C09D11/106C09D11/107C09D11/30C09D11/36H10K10/471
Inventor 李胜夏魏勤
Owner SHANGHAI MI FANG ELECTRONICS LTD
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