Plasma thermal spraying device

Abstract

The invention discloses a plasma thermal spraying device which is used for spraying tungsten-copper mixed powder to a red copper substrate. The plasma thermal spraying device comprises a spray gun, a powder feeder, an air flow meter, an air controller and an air supply system, wherein the spray gun is connected with the powder feeder, the air controller is used for controlling air filtration, the air controller is connected with the air flow meter, the air supply system is connected with the air flow meter, and the air flow meter is connected with the spray gun; the powder feeder is used for providing the tungsten-copper mixed powder, the tungsten-copper mixed powder is spherical powder grains with the grain size ranging from 2 micrometers to 15 micrometers, the spherical powder grains comprise tungsten grains and a copper layer which covers the tungsten grains, the tungsten grains are nano-scale grains, and the copper layer is a micron-scale layer; and the distance from the spray gun to the red copper substrate ranges from 8 mm to 12 mm. The plasma thermal spraying device is simple in structure, convenient to operate and low in cost, thermal conductivity of a tungsten-copper flange cooling fin made through the device reaches up to 380 W/m*K, and the cooling fin is stable and reliable.

Description

technical field [0001] The invention relates to the field of spraying equipment, in particular to a plasma thermal spraying equipment. Background technique [0002] More than 60% of the cost of high-end semiconductor electronic devices, including LEDs, lasers and microwave high-power devices, comes from packaging, and the key to packaging technology is heat dissipation. Heat dissipation not only affects the cost, but also affects the performance of semiconductor devices. For semiconductor electronic devices, heat sinks with excellent thermal conductivity and electrical conductivity are required. Oxygen-free copper is the first choice, and the price is cheap, which can meet the needs of most electronic devices. However, the thermal expansion coefficient of oxygen-free copper is more than three times larger than that of semiconductors. During the use of devices, the difference and mismatch of thermal expansion coefficients will lead to cracking and failure of semiconductor el...

AI Technical Summary

Problems solved by technology

[0004] The traditional process adopts sintering and infiltration method to produce tungsten-copper alloy. The process is complicated, the processing is difficult, the consumption of tungsten is large, the production cost is high, and the maximum thermal conductivity of the material is about 200W / m*K, generally only about 180-190W / m*K , which to a certain extent limits the further improvement of the power of LDMOS and other devices, but in order to ensure the reliability of the device, it can only be at the expense of the power of the device

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