Unlock instant, AI-driven research and patent intelligence for your innovation.

High-efficiency inverted organic photovoltaic cell and manufacturing method thereof

An organic photovoltaic cell, high-efficiency technology, applied in photovoltaic power generation, circuits, electrical components, etc., to achieve the effect of improving electron collection efficiency and device performance, increasing the number, and good integration

Active Publication Date: 2017-07-18
江苏博创升降机械有限公司
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention proposes a high-efficiency inverted organic photovoltaic cell device structure and its preparation process, solves the problem of simple modification of the cathode in the inverted organic photovoltaic cell, and obtains an inverted organic photovoltaic device with low cost, high efficiency and long life

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-efficiency inverted organic photovoltaic cell and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Embodiment one: the device structure is ITO / Ag / Bphen / SubPc:C 70 / TAPC / MoO 3 / Al, the device preparation steps and related process parameters are as follows.

[0024] The first step, substrate cleaning: ITO conductive glass is cleaned with acetone and glass cleaner in sequence, ultrasonically treated in acetone, deionized water, and isopropanol for 10 minutes, dried with nitrogen, and then irradiated with ultraviolet light for 10 minutes.

[0025]The second step is to open the ultra-high vacuum deposition system and load the pretreated ITO substrate and required materials; the ultra-high vacuum deposition system is evacuated to a pressure of less than 10 -4 Pa.

[0026] The third step is to prepare an Ag nano collection layer on the ITO cathode substrate, the deposition rate is 0.02 nm / s, and the deposition thickness is 0.5 nm. During the deposition process, the temperature of the cathode substrate was controlled at 80 °C.

[0027] The fourth step is to prepare a Bph...

Embodiment 2

[0032] Embodiment 2: The device structure is ITO / Ag / BCP / C 60 / Rubrene / MoO 3 / Ag, device preparation steps and related process parameters are as follows.

[0033] The first step, substrate cleaning: ITO conductive glass is cleaned with acetone and glass cleaner in sequence, ultrasonically treated in acetone, deionized water, and isopropanol for 10 minutes, dried with nitrogen, and then irradiated with ultraviolet light for 10 minutes.

[0034] The second step is to open the ultra-high vacuum deposition system and load the pretreated ITO substrate and required materials; the ultra-high vacuum deposition system is evacuated to a pressure of less than 10 -4 Pa.

[0035] The third step is to prepare an Ag nano collection layer on the ITO cathode substrate, the deposition rate is 0.1nm / s, and the deposition thickness is 2nm. During the deposition process, the temperature of the cathode substrate was controlled at 100 °C.

[0036] In the fourth step, a BCP exciton blocking layer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the organic optoelectronic device manufacturing technology field and especially relates to a high-efficiency inverted organic photovoltaic cell device structure design and a manufacturing method thereof. An inverted organic photovoltaic cell-cathode simple modification problem is solved. A metal nanometer collection layer and exciton blocking layer structure is used to solve a problem that inverted organic photovoltaic-cell electronic collection efficiency is low. The electronic collection efficiency is greatly increased, a non-radiation transition loss is avoided, an open-circuit voltage, a short circuit current and a filling factor of a device are increased, and finally energy conversion efficiency of an organic photovoltaic cell is greatly increased. In the method, a manufacturing technology is simple, cost is low, complex chemical engineering and solvent engineering are avoided and manufacturing cost of the organic photovoltaic cell can be greatly reduced.

Description

technical field [0001] The invention relates to the technical field of organic optoelectronic device manufacturing, in particular to a high-efficiency inverted organic photovoltaic cell and a preparation method thereof. Background technique [0002] Severe energy and environmental crises have prompted human beings to look for new energy sources that can replace traditional fossil fuels. Among them, solar energy not only has the advantages of cheapness and cleanliness, but also is inexhaustible. It is predicted that solar energy will be the main energy source in the next 100 years and become the best way to solve the energy shortage problem. After years of development, the energy efficiency of inorganic photovoltaic cells has exceeded 40%, and industrialization has been achieved. Compared with inorganic photovoltaic cells, organic photovoltaic cells have attracted interest and attention in the field of scientific research because of a series of advantages. Specifically, th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/48
CPCH10K30/82Y02E10/549Y02P70/50
Inventor 陈胜红
Owner 江苏博创升降机械有限公司