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an optoelectronic processor

A processor, optoelectronic technology, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problems of complex structure and fixed, and achieve the effect of increasing the bending degree of energy level, reducing the resistance, and being easy to pass through.

Active Publication Date: 2020-12-29
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current programmable logic device structure is relatively complex, and the structural framework of the logic gate itself is fixed, so the programmable characteristics are realized by changing the connection mode of the logic gate array.

Method used

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Embodiment 1

[0086] In this embodiment, the structure of the photoelectric processor is as figure 1 As shown, including substrate, bottom electrode, dielectric layer and top electrode. The bottom electrode is located on the substrate, and the dielectric layer is located between the bottom electrode and the top electrode.

[0087] In this embodiment, the substrate is a Si substrate; the bottom electrode is aluminum; the dielectric layer is a cerium oxide film with a thickness of 20-30 nm; the top electrode is an ITO film with a thickness of 100 nm.

[0088] In this embodiment, the photoelectric processor is prepared by coating, which includes the following steps:

[0089] (1) The Si substrate was ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes. After taking it out, it was blown dry with nitrogen, and then placed in the vacuum chamber of the electron beam evaporation system. Deposit a layer of metal aluminum as the bottom electrode;

[0090] (2) Put the Si...

Embodiment 2

[0137] In this embodiment, the structure of the photoelectric information conversion element is basically the same as that in Embodiment 1, except that the Schottky junction formed by zinc oxide film and strontium niobate-doped titanate electrode is used instead of the cerium oxide in Embodiment 1. Schottky junction made of thin film and aluminum.

[0138] In this embodiment, the preparation method of the photoelectric information conversion element is basically the same as the preparation method in Embodiment 1, the difference is that in step (2), a zinc oxide film is sputter deposited on the strontium niobate titanate substrate .

[0139] The photoelectric conversion properties of the photoelectric information conversion element were characterized using a Keithley 4200 semiconductor parameter measuring instrument, and the characterization method was the same as that in Example 1. The results show that the element has resistive switching properties and continuous photoconduc...

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Abstract

The invention provides a photoelectric processor which comprises a top electrode, a dielectric layer and a bottom electrode, wherein the dielectric layer and at least one electrode selected from the bottom electrode and the top electrode form a schottky junction. The photoelectric processor has a photo-induced resistance change effect and a photo-induced resistance change effect. The photoelectric processor can simultaneously process an optical signal and an electric signal. In a working state, the optical signal and the electric signal are applied to the photoelectric processor as two independent input signals, and the resistance is used as an output signal. An input signal is adjusted. The photoelectric processor can realize a function of processing a logical or gate and a logical and gate. The photoelectric processor can be applied to many fields of logical storage, logical processing, reconfigurable logical processing, nonvolatile storage, photoelectric mixed logical processing, etc.

Description

technical field [0001] The invention relates to the technical field of photoelectric information storage and processing, in particular to a photoelectric processor. Background technique [0002] Programmable logic devices play an important role in functional information processing modules and programmable processors because of their flexible functionality. However, the structure of the current programmable logic device is relatively complicated, and the structural frame of the logic gate itself is fixed, so the programmable characteristics are realized by changing the connection mode of the logic gate array. [0003] Memristors based on semiconductor materials have obvious response behaviors to optical signals, so both optical and electrical signals are allowed to regulate the resistance of a single device, which can be used for detection, processing and storage of optical signals in optical interconnection systems. In order to further improve the programmability of the log...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/14H01L31/108
CPCH01L27/14H01L31/108
Inventor 李润伟檀洪伟刘钢
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI