High-energy {011} crystal face selectively-leached anatase TiO2 graded microspheres as well as preparation method and application thereof
A selective, anatase technology, applied in chemical instruments and methods, titanium oxide/hydroxide, analytical materials, etc., can solve problems such as selective erosion of crystal planes, and achieve simple and convenient preparation methods and enhanced gas sensitivity Simple and practical effect of performance and process
Inactive Publication Date: 2017-08-04
JIANGXI NORMAL UNIV
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[0004] The purpose of the present invention is to solve the problem of existing TiO with special morphology and exposed crystal planes. 2 Fabrication of nanostructured materials, providing an anatase TiO with high energy {001} facet selective erosion 2 Graded microspheres and methods for their preparation and application
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[0017] The beneficial effects of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, aiming at helping readers better understand the essence of the present invention, but not limiting the implementation and protection scope of the present invention.
[0018] Anatase TiO Selectively Etched by High Energy {001} Crystal Plane 2 The preparation process of graded microspheres is completed according to the following steps: first prepare a 0.025-0.075mol / L titanium tetrafluoride aqueous solution, and adjust its pH value to 2-4 with a concentration of 0.01M dilute sulfuric acid and sodium hydroxide solution, Stir for 2-4 hours to obtain the reaction precursor solution for use; take a certain amount of reaction precursor solution and add it to a polytetrafluoroethylene high-pressure reactor until the filling degree of the inner tank is 30-70%, put the autoclave into a blast drying oven, set The reaction temperature is set ...
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Abstract
The invention discloses high-energy {011} crystal face selectively-leached anatase TiO2 graded microspheres as well as a preparation method and application thereof. The preparation method is finished through a one-step hydrothermal reaction and has the advantages of simplicity and convenience, large product yield and easiness for enlarged production. The high-energy {011} crystal face selectively-leached anatase TiO2 is of a microsphere-shaped structure and the diameter is 1-5 microns; the microspheres are formed assembling high-energy {011} crystal face selectively-leached anatase TiO2 nano-sheets and the transverse size of the nano-sheets is 100nm-500nm; the leaching degree of a high-energy {011} crystal face in each nano-sheet can be simply and conveniently regulated and controlled by a pH (Potential of Hydrogen) value of a reaction system. By adopting a flat plate type thick-film gas sensor device process, the TiO2 graded microsphere material can be coated, welded and aged to prepare a semiconductor type gas sensor device. The device displays an enhanced gas-sensitive performance on acetone due to selective leaching of a high-energy {011} crystal face and a unique graded porous shape of the material.
Description
technical field [0001] The invention relates to anatase TiO with high-energy {001} crystal face selectively eroded 2 Grading microspheres, especially an anatase TiO with high energy {001} facet selective erosion 2 Graded microspheres, methods of preparation and applications thereof. Background technique [0002] The development of industry and economy has provided great material convenience for human production and life, but at the same time various environmental problems have followed one after another. Automobile exhaust, factory exhaust gas, household liquefied petroleum gas, natural gas and coal gas are threatening people's health and life all the time. Effective monitoring and early warning of toxic, harmful, flammable and explosive gases in the environment has become one of the problems that must be solved . The emergence of gas sensors provides a way to solve this problem. In the research of resistive semiconductor gas sensor, TiO 2 Due to the advantages of low c...
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IPC IPC(8): C01G23/053G01N27/12
CPCC01G23/0536C01P2002/72C01P2004/03C01P2004/04C01P2004/32C01P2004/61G01N27/127
Inventor 杨勇梁艳袁彩雷胡瑞景袁琴邹紫旦叶鹏辉
Owner JIANGXI NORMAL UNIV