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A controllable preparation method for self-assembled nanoflowers of p-type layered GaTe nanosheets

A technology of nanoflowers and gallium telluride, applied in chemical instruments and methods, selenium/tellurium compounds, metal selenides/tellurides, etc., can solve the problems of difficult and controllable preparation of GaTe nanomaterials, and achieve obvious pn junction rectification effect , Overcoming the effect of easy recombination and good photoelectrocatalytic hydrogen production effect

Inactive Publication Date: 2019-08-02
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem to be solved by the present invention is to overcome the difficult and controllable preparation problem of GaTe nanometer material

Method used

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  • A controllable preparation method for self-assembled nanoflowers of p-type layered GaTe nanosheets
  • A controllable preparation method for self-assembled nanoflowers of p-type layered GaTe nanosheets
  • A controllable preparation method for self-assembled nanoflowers of p-type layered GaTe nanosheets

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Embodiment 1

[0036] A method for the controllable preparation of large-area p-type layered GaTe nanosheet self-assembled nanoflowers under normal pressure, comprising the steps of:

[0037] The first step is to clean the sapphire wafer and quartz boat. First, put a sapphire substrate with a size of 1×1cm, a thickness of 0.5mm, and a surface roughness of 0.2nm into a beaker filled with 50ml of ethanol, perform ultrasonic cleaning for 15 minutes, and take it out and blow it dry with a nitrogen gun; Next, put the dried sapphire substrate into another beaker containing 50 ml of acetone, perform ultrasonic cleaning for 15 minutes, take it out and dry it with a nitrogen gun; finally put the dried sapphire substrate into 100 ml of deionized In water, perform ultrasonic cleaning for 10 minutes, take it out and dry it with a nitrogen gun.

[0038] In the second step, the sapphire substrate is annealed. The sapphire substrate cleaned up in the first step is directly put into the double-temperatur...

Embodiment 2

[0049] A method for the controllable preparation of large-area p-type layered GaTe nanosheet self-assembled nanoflowers under normal pressure, comprising the steps of:

[0050] The first step is to clean the sapphire wafer and quartz boat. First, put a sapphire substrate with a size of 1×1cm, a thickness of 0.5mm, and a surface roughness of 0.2nm into a beaker filled with 50ml of ethanol, perform ultrasonic cleaning for 15 minutes, and take it out and blow it dry with a nitrogen gun; Next, put the dried sapphire substrate into another beaker containing 50 ml of acetone, perform ultrasonic cleaning for 15 minutes, take it out and dry it with a nitrogen gun; finally put the dried sapphire substrate into 100 ml of deionized In water, perform ultrasonic cleaning for 10 minutes, take it out and dry it with a nitrogen gun.

[0051] In the second step, the sapphire substrate is annealed. The sapphire substrate cleaned up in the first step is directly put into the double-temperatur...

Embodiment 3

[0058] A method for the controllable preparation of large-area p-type layered GaTe nanosheet self-assembled nanoflowers under normal pressure, comprising the steps of:

[0059] The first step is to clean the sapphire wafer and quartz boat. First, put a sapphire substrate with a size of 1×1cm, a thickness of 0.5mm, and a surface roughness of 0.2nm into a beaker filled with 50ml of ethanol, perform ultrasonic cleaning for 15 minutes, and take it out and blow it dry with a nitrogen gun; Next, put the dried sapphire substrate into another beaker containing 50 ml of acetone, perform ultrasonic cleaning for 15 minutes, take it out and dry it with a nitrogen gun; finally put the dried sapphire substrate into 100 ml of deionized In water, perform ultrasonic cleaning for 10 minutes, take it out and dry it with a nitrogen gun.

[0060] In the second step, the sapphire substrate is annealed. The sapphire substrate cleaned up in the first step is directly put into the double-temperatur...

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Abstract

The invention discloses a method for preparing self-assembled nanoflowers of large-area p-type layered GaTe nanosheets under normal pressure. The process steps are as follows: a) prepare a layer of ZnO film in the shape of nanoflowers on a sapphire substrate; As a seed layer in the growth process of GaTe; b) Put the prepared precursor sample into a tube furnace and grow GaTe in a normal pressure, high-purity argon environment; c) Use scanning tunneling microscope, Raman, light The synthesized materials were tested by characterization methods such as electroluminescence, atomic force microscopy, and transmission electron microscopy. The morphology of GaTe is controlled by the morphology of ZnO and growth conditions such as time, argon gas flow, temperature, etc., while the preparation of ZnO nanoflowers is controlled by adjusting gas flow, temperature and other conditions. The method is highly efficient and has controllable synthesis. The prepared GaTe / ZnO nanoflower heterojunction structure has an obvious pn junction rectification effect and can be used for photoelectrocatalytic hydrogen production and other applications. In addition, it also provides opportunities for the growth of new two-dimensional materials such as GaTe. For reference purposes.

Description

technical field [0001] The invention relates to the field of preparation of nanomaterials, in particular to a controllable preparation method for realizing the self-assembly of p-type layered GaTe nanosheets into nanoflowers. Background technique [0002] II-VI direct bandgap semiconductor zinc oxide (ZnO) has a hexagonal wurtzite structure, its forbidden band width is 3.37eV, and the exciton binding energy at room temperature is as high as 60meV, which is much greater than the thermal energy at room temperature (26meV). Important materials have become a new hotspot in the research of short-wavelength semiconductor laser materials and devices after GaN. [0003] In addition, ZnO materials have unique optical, electrical, and acoustic properties at the nanoscale, and the current preparation technology of zinc oxide is very mature, so a large number of researchers are interested in composite materials of zinc oxide and other excellent nanomaterials. On the other hand, graphen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/45C01B19/00C01G9/03B01J27/057
CPCC01B19/007C01G9/03C04B41/4531B01J27/0576C01P2002/72C01P2002/82C01P2004/04C01P2004/03C01P2004/01C01P2006/60C01P2006/40B01J35/39
Inventor 陈祖信楚盛
Owner SUN YAT SEN UNIV
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