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Crystal growing and surface protecting method for CsSnBr3 semiconductor

A crystal growth, cssnbr3 technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of slow progress, stability limitation of tin-containing perovskites, etc., and achieve the effect of eliminating bulk defects

Inactive Publication Date: 2017-08-18
SHANGHAI TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the research field of perovskite is mainly based on lead-containing materials, while the research on tin-containing perovskite is relatively slow due to its stability limitation.

Method used

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  • Crystal growing and surface protecting method for CsSnBr3 semiconductor
  • Crystal growing and surface protecting method for CsSnBr3 semiconductor
  • Crystal growing and surface protecting method for CsSnBr3 semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Example 1: CsSnBr 3 solid

[0027] In a nitrogen atmosphere, an equimolar ratio of CsBr and purified SnBr 2 Mix well and seal in ampoules containing about 1 / 2 atmosphere of nitrogen. After the ampoule was heated at 460°C for 4 hours and cooled to room temperature, the reactant turned into a black frit. After the frit is taken out, it is ground to obtain a black powder, and its X-ray diffraction pattern is figure 1 as shown in a. This diffractogram is consistent with that of CsSnBr 3 The standard spectrum (ICSD 4071) is consistent and there is no impurity peak. It is a cubic system Pm-3m space group with a lattice constant

Embodiment 2

[0028] Example 2: CsSnBr with significantly eliminated bulk defects 3 the crystal

[0029] In a nitrogen environment, the CsSnBr obtained in 1.65g embodiment 1 3 The solid was mixed with 5 mL of anhydrous ethylene glycol and dissolved under stirring at 140°C to obtain a colorless and clear solution. After the solution was kept at 120° C. for 3 hours, the temperature was lowered to 80° C. at a rate of 0.2° C. / hour to obtain black bright square crystals. Take out the crystal while it is hot in a nitrogen environment, and dry the surface for later use, such as image 3 shown.

[0030] Select a single crystal from the above products, do X-ray 2θ scanning on its upper surface, and obtain the diffraction pattern as follows: figure 1 As shown in b, it only consists of 100 index series diffraction peaks, indicating that the CsSnBr 3 The upper surface of the crystal is the (100) crystal plane. figure 2 b is the visible light transmission spectrum of the single crystal, in which ...

Embodiment 3

[0031] Example 3: Protection of CsSnBr by CsF 3 crystal surface

[0032] In a nitrogen environment, the CsSnBr obtained in 1.75g ​​embodiment 1 3 The solid was mixed with 5 mL of anhydrous ethylene glycol and dissolved under stirring at 140°C to obtain a colorless and clear solution. After the solution was kept at 135° C. for 4 hours, the temperature was lowered to 90° C. at a rate of 0.2° C. / hour to obtain black bright square crystals. In a nitrogen environment, take out the crystal while it is hot and soak it in the ethylene glycol solution of CsF for 30 seconds, then take it out and dry the surface for later use.

[0033] Select a single crystal from the above products, plate gold electrodes on its upper surface, and make a single crystal photodiode device on its lower surface in contact with gallium electrodes. Figure 4 a is the external quantum efficiency curve of the device measured in air, the wavelength of the response signal peak is 740nm, the half-maximum width i...

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Abstract

The invention provides a crystal growing and surface protecting method for a novel semiconductor material CsSnBr3. The method provided by the invention comprises the following steps of: in a nitrogen environment, performing a reaction on CsBr and purified SnBr2 to obtain a CsSnBr3 solid raw material; then dissolving the CsSnBr3 solid raw material in anhydrous glycol; performing slow programmed freezing to obtain CsSnBr3 crystals, wherein absorption spectra show that defect levels in the bulk phase thereof are obviously eliminated; and performing contact on the surfaces of crystals of CsSnBr3 and a solution containing fluorine ions or adding brominated hydrocarbyl ammonium into crystal growing mother liquor of CsSnBr3, so that the surfaces of the crystals of CsSnBr3 are stabilized in atmosphere. CsSnBr3 single crystals, the surfaces of which are protected by means of the method, are prepared into a photodiode apparatus, so that the photodiode apparatus has narrow and symmetrical responding peaks in a wavelength range of 700-760nm. The photodiode apparatus which has the responding characteristic and meets the RoHS standard demand is reported for the first time.

Description

technical field [0001] The invention belongs to the technical field of new materials and relates to CsSnBr 3 Crystal growth of semiconductor materials and methods for surface protection. Background technique [0002] A large class of new materials with a perovskite structure has excellent semiconductor properties and has great application prospects in the field of photoelectric conversion, which has attracted widespread attention worldwide. In recent years, the performance of perovskite solar cells has grown rapidly. At present, the energy conversion efficiency certified by the laboratory has reached 22%, surpassing most commercial solar cells, and its production cost is lower than that of silicon solar cells. [0003] In the ABX3 structure of perovskite materials, A is a large alkali metal ion (common Cs + ) or organic cations (common methylammonium cations MA + and formamidine cationic FA + ), B is a divalent cation Pb 2+ or Sn 2+ , X is a halide anion (Cl - , Br -...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B7/08H01L31/0216H01L31/032
CPCH01L31/02167H01L31/032C30B7/08C30B29/12
Inventor 米启兮李炳翰夏宇
Owner SHANGHAI TECH UNIV
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