X-ray diffraction in-situ characterization method of film orientation crystal growth

Abstract

The invention discloses an X-ray diffraction in-situ characterization method of film orientation crystal growth. The in-situ characterization method comprises the steps of firstly utilizing a symmetrical reflective scanning method to measure out-plane diffraction peak position of a film and determining an out-plane orientation characteristic of the film; then utilizing an asymmetrical reflective scanning method to obtain the diffraction peak position of a crystal face set near a predicted orientation based on initial primitive cell parameters, wherein crystal faces of the crystal face set form inclined included angles with a substrate; calculating out the difference delta between the diffraction peak position obtained by measurement and a prediction value based on the initial primitive cell parameters and continuously reducing the delta through lattic parameter correction and loop iteration calculation until the delta is small enough to obtain more accurate lattic parameter information. According to the X-ray diffraction in-situ characterization method disclosed by the invention, a computer-assisted calculating method is utilized, high enough analysis accuracy can be obtained within several seconds, and output data can be directly utilized as an input value of the next measuring period; thus, a high-speed dynamic measuring and analyzing system is formed.

Description

technical field [0001] The invention relates to an X-ray diffraction in-situ characterization method for film oriented crystal growth, and belongs to the technical field of film crystal phase structure characterization. Background technique [0002] Thin films prepared by solution methods, especially those grown by orientation, usually exhibit out-of-plane or in-plane orientation growth behavior. For example, ZnO thin films prepared from sol-gel precursors by using the pulling method thin film preparation technology can exhibit the out-of-plane preferred orientation of (001) or (100) direction. In organic materials, this kind of oriented growth is more common, and the control and adjustment of the lattice structure can be realized through molecular structure design, combined with solvent selection and substrate modification and other technological means. In particular, conjugated small organic molecules can simply control their growth rate or use different organic solvents ...

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Problems solved by technology

[0006] Problems existing in the existing technology: electron diffraction requires the sample to be thin enough, often requires complex sample preparation procedures, cannot be characterized in situ, and takes a long time to characterize; the use of synchrotron radiation X-ray in-plane diffraction technology has the advantage of surface sensitivity, but the detection depth Insufficient, and it is necessary to obtain the external total reflection angle of the film in advance (θ c ); high requirements on the accuracy of the optical system and the positioning accuracy of the sample; based on the above problems, the present invention provides an X-ray diffraction in-situ characterization method for film orientation crystal growth

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