Metal-semiconductor-glass opto-electronic optical fiber and preparation method thereof

A technology of semiconductor and optical fiber, which is applied in the field of metal-semiconductor-glass photoelectric optical fiber and its preparation, can solve the problems of not being able to become photoelectric optical fiber and low conduction efficiency, achieve excellent performance and avoid the effect of interdiffusion

Active Publication Date: 2017-09-05
SOUTH CHINA UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the previous work did not integrate metal electrodes into the optical fiber. The optical fiber can only conduct

Method used

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  • Metal-semiconductor-glass opto-electronic optical fiber and preparation method thereof
  • Metal-semiconductor-glass opto-electronic optical fiber and preparation method thereof
  • Metal-semiconductor-glass opto-electronic optical fiber and preparation method thereof

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Embodiment 1

[0035] The preparation process of the metal aluminum-selenium tellurium semiconductor-phosphate glass photoelectric optical fiber of this embodiment is as follows:

[0036] (1) Phosphate glass is mechanically cold processed into a clad glass rod with a diameter of 25mm and a length of 10cm, and then a central hole with a diameter of 3mm and a length of 8cm is drilled in the center of the clad glass rod along the axial direction; Drill two side holes with the same size as the center hole on both sides. All the holes are non-through holes, and the two side holes are symmetrically distributed with the center hole as the axis of symmetry. The center of the two side holes and the center hole The connecting line of the center is a straight line; finally, the inner wall of the hole and the outer surface of the glass rod are physically and chemically polished;

[0037](2) In the glove box, mix high-purity selenium and tellurium semiconductor powders according to the molar ratio in Tab...

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Abstract

The invention discloses a metal-semiconductor-glass opto-electronic optical fiber and a preparation method thereof. The opto-electronic optical fiber comprises a cladding (2), a fiber core (3) and metal aluminum wires (1), wherein the cladding (2) is phosphate glass; the fiber core (3) is arranged on an axis of the optical fiber and refers to selenium-tellurium semiconductor spheres distributed at intervals; two metal aluminum wires (1) which are symmetrically distributed are arranged on two sides of the fiber core (3) by taking the fiber core (3) as an axis of symmetry; the metal aluminum wires (1) are parallel to the fiber core (3) along the axis direction of the optical fiber; and the metal aluminum wires (1) and the selenium-tellurium semiconductor spheres in the fiber core (3) are in direct contact so as to form an electrical circuit. The method comprises the following steps: preparing an optical fiber preform, performing wire drawing, and performing heat treatment, thereby obtaining the opto-electronic optical fiber. The opto-electronic optical fiber disclosed by the invention integrates high photoconductive property of the selenium-tellurium semiconductor and conductivity of the metal aluminum, the current change in the dark and under the light reaches two orders of magnitudes or more, and the change of light current can be regulated by regulating selenium-tellurium components.

Description

technical field [0001] The invention relates to the field of optical fiber preparation, in particular to a metal-semiconductor-glass photoelectric optical fiber and a preparation method thereof. Background technique [0002] In 2004, American scientists Fink et al. (M.Bayindir, F.Sorin, A.F.Abourady, et al., Nature, 2004, 431(7010):826-829.) prepared the metal-semiconductor- Polymer photoelectric fiber, this new type of composite fiber is made of low melting point metal tin (Sn), amorphous sulfide semiconductor (As-Se-Te-Sn or As 2 Se 3 ) and polymers (PEI or PES), which integrates the rich electrical and optoelectronic properties of semiconductors, the electrical conductivity of metals and the flexibility and braidability of optical fibers, and is expected to be used in smart fabrics, photoelectric detection and temperature sensing. In 2006, American scientist Badding and British scientist Sazio and others used high-pressure chemical vapor deposition to selectively deposi...

Claims

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Application Information

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IPC IPC(8): C03B37/012C03B37/025C03B37/10
CPCC03B37/01205C03B37/025C03B37/10C03B2203/10
Inventor 杨中民唐国武钱奇
Owner SOUTH CHINA UNIV OF TECH
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