Low-temperature growing method for graphene

A graphene and low-temperature technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of high energy consumption, high temperature, and low output, and achieve excellent structural performance, simple equipment, and high yield Effect

Inactive Publication Date: 2017-09-15
南陵县生产力促进中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the vapor phase growth method, the usual growth process is: Cu or SiC sheet is used as the substrate, CH4 and H2 are used as reaction gases, and the growth is above 1000 ° C, which requires a high temperature, high energy consumption, and low output.

Method used

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  • Low-temperature growing method for graphene

Examples

Experimental program
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Effect test

Embodiment 1

[0020] 1) Using crystalline sodium chloride (NaCl) as the substrate, a layer of Zn film with a thickness of 10nm was pre-deposited on it by magnetron sputtering;

[0021] 2) Put the above-mentioned NaCl substrate pre-deposited with Zn film in a tubular resistance furnace, heat it to 300°C, and feed H2-CH4-N2 as the reaction gas, the gas pressure is 55Pa, and the partial pressure of H2:CH4:N2 The ratio is 25:60:15, and the reaction takes 3.5 hours;

[0022] 3) After the reaction, turn off the power, stop feeding N2 and CH4, continue to feed H2 gas, and raise the gas pressure to 1000Pa, use H2 gas to cool, quickly cool the sample to room temperature, and obtain the desired product.

Embodiment 2

[0024] 1) Using crystalline sodium chloride (NaCl) as the substrate, a layer of Zn film with a thickness of 10nm was pre-deposited on it by magnetron sputtering;

[0025] 2) Put the above-mentioned NaCl substrate pre-deposited with Zn film in a tubular resistance furnace, heat it to 350°C, and feed H2-CH4-N2 as the reaction gas, the gas pressure is 50Pa, and the partial pressure of H2:CH4:N2 The ratio is 25:60:15, and the reaction takes 3.5 hours;

[0026] 3) After the reaction, turn off the power, stop feeding N2 and CH4, continue to feed H2 gas, and raise the gas pressure to 1000Pa, use H2 gas to cool, quickly cool the sample to room temperature, and obtain the desired product.

Embodiment 3

[0028] 1) Using crystalline sodium chloride (NaCl) as the substrate, a layer of Zn film with a thickness of 10nm was pre-deposited on it by magnetron sputtering;

[0029] 2) Put the above-mentioned NaCl substrate pre-deposited with Zn film in a tubular resistance furnace, heat it to 300°C, and feed H2-CH4-N2 as the reaction gas, the gas pressure is 60Pa, and the partial pressure of H2:CH4:N2 The ratio is 25:60:15, and the reaction takes 3.5 hours;

[0030] 3) After the reaction, turn off the power, stop feeding N2 and CH4, continue to feed H2 gas, and raise the gas pressure to 1000Pa, use H2 gas to cool, quickly cool the sample to room temperature, and obtain the desired product.

[0031] Adopt scanning electron microscope to carry out microscopic appearance observation to the final product graphene that each embodiment makes, as figure 1 It is a scanning electron microscope (SEM) picture of the low-temperature grown graphene material obtained in Example 1. The figure shows ...

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Abstract

The invention discloses a low-temperature growing method for graphene. The method comprises the following steps: 1) taking crystallized sodium chloride (NaCl) as a substrate, and pre-depositing a Zn film with a thickness of 10 nm by employing a magnetron sputtering method; 2) putting the NaCl substrate with the pre-deposited Zn film in a tubular resistance furnace, performing heating to 300-350 DEG C, introducing H2-CH4-N2 as a reaction gas, and performing reaction for 3.5 h; and 3) after the reaction is finished, turning off the electric source, continuing to introduce H2, and rapidly cooling the obtained sample to room temperature by using H2, so as to obtain the required product graphene. The graphene prepared according to the low-temperature growing method has a two-dimensional structure, vertically grows on the substrate, forms a porous structure through mutual connection and has a uniform morphological structure. The growing temperature is reduced to 300 DEG C which is an extremely low temperature at which graphene grows. Meanwhile, the grown graphene is uniform in morphology, porous, and high in specific surface area, and has a wide application prospect in the field of super capacitors.

Description

technical field [0001] The invention relates to the technical field of graphene preparation, especially the technical field of low-temperature growth of graphene. Background technique [0002] Graphene is the hottest new material in the past ten years. It is a typical two-dimensional nanomaterial with excellent performance in all aspects, and it has almost become a universal material. [0003] There are many ways to grow graphene, which can be mainly divided into two aspects: first, the gas phase method, the grown graphene is a single layer or a few layers, usually used in microelectronics, optoelectronics, optics, electricity and other fields ; Second, the liquid phase method, the grown graphene is a layered material with a large number of layers, which is usually used in catalysis, lithium ion batteries, supercapacitors and other fields. [0004] In the vapor phase growth method, the usual growth process is: Cu or SiC sheet is used as the substrate, CH4 and H2 are used as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184
CPCC01B2204/04C01B2204/22C01P2004/03C01P2006/17
Inventor 汪永辉汪盛明
Owner 南陵县生产力促进中心
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