Equivalent simulation circuit of logarithmic memory capacitor

An equivalent simulation and memcapacitor technology, applied in CAD circuit design, instrumentation, electrical digital data processing, etc., can solve problems such as poor realization effect, difficulty in expanding research direction, and difficulty in simulating memcapacitor characteristics

Active Publication Date: 2017-09-15
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, among the simulation models related to memcapacitors, there are mainly primary smooth curve models and quadratic smooth curve models. Researchers mainly use these few memcapacitor models for circuit design and simulation, and it is difficult to expand research directions.
The known memcapacitor equivalent circuit composed of hardware equivalent circuit has poor implementation effect and it is difficult to simulate the characteristics of the actual memcapacitor

Method used

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  • Equivalent simulation circuit of logarithmic memory capacitor
  • Equivalent simulation circuit of logarithmic memory capacitor
  • Equivalent simulation circuit of logarithmic memory capacitor

Examples

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Embodiment

[0022] Such as figure 1 As shown, the memcapacitor analog equivalent circuit includes an integrated operational amplifier U1 and multipliers U2, U3, U1 adopts LF347N, and U2 adopts AD633JN. The integrated operational amplifier U1 is used to realize the integral operation, the reverse addition operation, the logarithmic operation and the inverter; the multipliers U2 and U3 realize the multiplication operation.

[0023] Such as figure 2 As shown, the input signal u(t) enters the integral circuit composed of pin 1, pin 2, and pin 3 of the integrated operational amplifier U1, resistors R1, R2, and capacitor C1 through the resistor R1, and the integral of the voltage is obtained, that is, U1 Voltage on pin 1:

[0024]

[0025] u o1 Input to the multiplier U2 to get the voltage of the output terminal W pin:

[0026]

[0027] u 2w Input to the reverse adder composed of pin 12, pin 13, pin 14 of U1 and resistors R3, R4, R4, apply -5V power supply, get the voltage of pin 14...

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Abstract

The invention discloses an equivalent simulation circuit of a logarithmic memory capacitor. A circuit model meeting the characteristics of an exponential magnetic control memory capacitor is built by utilizing devices such as an operational amplifier, a multiplier and the like; and the circuit model can be applied to the research of the characteristics of a basic circuit of the memory capacitor and the research of a nonlinear circuit of the memory capacitor. Specifically, the functions of an integrator, an inverse summation operation circuit, a logarithmic operation circuit, an inverting amplifier and the like are realized by adopting an integrated circuit U1; the function of the multiplier is realized by integrated circuits U2 and U3; when a sine excitation signal is input, the characteristics of the signal can be observed by using an oscilloscope; voltage values of a voltage signal and a charge signal meet the characteristics of a 8-shaped compact hysteretic curve; and the hysteretic sidelobe area is reduced with the increment of a signal frequency. The circuit is simple and clear in structure; and as an emulator of an actual memory capacitor, the circuit is of important significance for characteristic and application research of a memory inductor.

Description

technical field [0001] The invention belongs to the technical field of circuit design, in particular to an equivalent analog circuit that satisfies the logarithmic model of the memcapacitor charge-voltage relationship and has hysteresis characteristics. Background technique [0002] In 1971, Professor Cai Shaotang proposed the concept of memristor on the basis of resistance, capacitance and inductance, which is used to represent charge q and magnetic flux The relationship between. In 2008, Hewlett-Packard Labs discovered the existence of memristors and reported them in Nature. Memristor has a nanoscale structure, which is of great significance in the research of non-lost memory and artificial neural network. Due to the high cost of manufacturing nano-devices and the difficulty of realization, they have not yet been commercialized. In 2009, Cai Shaotang and others proposed the concept of memristor and memristor based on memristor. A memcapacitor is a memory device that r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/36G06F30/367Y02D10/00
Inventor 王光义周玮丘嵘俞军
Owner HANGZHOU DIANZI UNIV
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