GaN based laser device and preparation method thereof

Abstract

The invention provides a preparation method of a GaN based laser device. The preparation method comprises the following steps: S1: sequentially growing an n-type limiting layer, a lower waveguide layer, a quantum well active region, a composite upper waveguide layer, a p-type electron blocking layer, a p-type limiting layer, and a p-type ohmic contact layer on a GaN substrate; S2: etching the p-type ohmic contact layer, the p-type limiting layer, the p-type electron blocking layer and the composite upper waveguide layer to form a ridge structure of the laser device; S3: growing a layer of oxidation film on the manufactured ridge structure, and manufacturing a p-type ohmic electrode by using a photoetching method; S4: thinning and cleaning the GaN substrate, and manufacturing an n-type ohmic contact electrode on the GaN substrate; S5: splitting, coating a film, packaging on a tube shell, manufacturing the GaN based laser device with the composite upper waveguide layer, and finishing the preparation. The invention further provides the GaN based laser device. The effective potential barrier of the electron blocking layer is improved, and the laser power and the slope efficiency are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a GaN-based laser and a preparation method thereof. Background technique [0002] The lasing wavelength of gallium nitride-based lasers covers the entire visible light band well, and makes it have important applications in civil and military fields such as laser display, laser lighting, underwater communication, storage, etc., and has been widely studied. [0003] The upper waveguide layer in GaN-based violet lasers will affect the effective barrier of the optical confinement and electron blocking layers, which in turn will affect the optical power and slope efficiency. Contents of the invention [0004] (1) Technical problems to be solved [0005] In view of the above technical problems, the present invention provides a GaN-based laser and its preparation method, which are used to increase the effective potential barrier of the electron blocking l...

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Problems solved by technology

[0003] The upper waveguide layer in GaN-based violet lasers will affect the effective barrier of the optical confinement and electron blocking layers, which in turn will affect the optical power and slope efficiency

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