Method for quickly preparing silver nanoparticle block-graphene-nickel foam composite material
A composite material, graphene technology, applied in graphene, nano-carbon and other directions, can solve the problems of electrical conductivity, poor mechanical properties, difficult to recycle and reuse, consume a long time, etc., to improve mechanical properties, easy to operate, reduce The effect of the transfer process
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Embodiment 1
[0027] 1) Preparation of graphene-nickel foam by CVD method: the nickel foam was cleaned with acetone, ethanol, and deionized water for 15-20 min respectively to remove the surface oxide layer, and then washed with N 2 Blow dry; put it into the furnace quartz tube to evacuate, remove the air in the tube, and pass in Ar and H 2 , during the annealing process, the Ar flow rate is 100 sccm, and the H 2 The flow rate is 20sccm, the temperature is raised to 900°C at a rate of 15°C / min, and annealed at this temperature for 30min; when growing graphene, CH 4 and H 2 , the graphene growth process leads to CH 4 The flow rate is 10sccm, and H 2 Flow rate is 50sccm, grow for 5min; disconnect CH after growth 4 , and quickly lower the temperature, and take out the sample after the furnace cools down to room temperature, and obtain a nickel foam material covered with graphene.
[0028] 2) Preparation of silver nanocube: fix the cleaned three-neck flask in an oil bath at 140°C, put in a...
Embodiment 2
[0031] 1) Preparation of graphene-nickel foam by CVD method: wash the nickel foam with acetone, ethanol, and deionized water for 15-20 minutes respectively to remove the surface oxide layer, and then blow dry with N2; put it into the furnace quartz tube to evacuate, and remove The air in the tube is fed with Ar and H 2 , during the annealing process, the Ar flow rate is 110sccm, and the H 2 The flow rate is 30sccm, the temperature is raised to 930°C at a rate of 15°C / min, and annealed at this temperature for 33min; CH is introduced when growing graphene 4 and H 2 , the graphene growth process leads to CH 4 The flow rate is 11sccm, and H 2 Flow rate is 60sccm, grow for 5min; disconnect CH after growth 4 , and quickly lower the temperature, and take out the sample after the furnace cools down to room temperature, and obtain a nickel foam material covered with graphene.
[0032] 2) Preparation of silver nanocube: fix the cleaned three-neck flask in an oil bath at 150°C, put ...
Embodiment 3
[0035] 1) Preparation of graphene-nickel foam by CVD method: the nickel foam was cleaned with acetone, ethanol, and deionized water for 15-20 min respectively to remove the surface oxide layer, and then washed with N 2 Blow dry; put it into the furnace quartz tube to evacuate, remove the air in the tube, and pass in Ar and H 2 , during the annealing process, the Ar flow rate is 120sccm, and the H 2 The flow rate is 40sccm, the temperature is raised to 960°C at a rate of 15°C / min, and annealed at this temperature for 36min; CH is introduced when growing graphene 4 and H 2 , the graphene growth process leads to CH 4 The flow rate is 12sccm, and H 2 Flow rate is 70sccm, grow for 5min; disconnect CH after growth 4 , and quickly lower the temperature, and take out the sample after the furnace cools down to room temperature, and obtain a nickel foam material covered with graphene.
[0036] 2) Preparation of silver nanocube: fix the cleaned three-neck flask in an oil bath at 160...
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