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A kind of preparation method of v-si intermetallic compound

An intermetallic compound, v-si technology, applied in the field of vanadium-silicon intermetallic compound preparation, can solve the problems of unobtainable quality V-Si intermetallic compounds, alloy multi-strain, defects and impurities, and defects, etc., to achieve material quality High utilization rate, good uniformity of structure and composition, and the effect of reducing volatilization

Active Publication Date: 2019-02-26
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Mechanical alloying method, thermal reduction method, electrolysis method, etc. are the common methods for preparing V-Si intermetallic compounds at present, but the alloys produced introduce more strain, defects and impurities, etc.
Even if the usual preparation method uses high-purity vanadium and silicon raw materials, impurities and defects will be introduced during the preparation process, and high-quality V-Si intermetallic compounds cannot be obtained.

Method used

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  • A kind of preparation method of v-si intermetallic compound
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  • A kind of preparation method of v-si intermetallic compound

Examples

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example 1

[0021] V-Si intermetallic compounds were prepared by using vanadium particles with a purity of 99.95% as raw materials and silicon particles with a purity of 99.95% as raw materials. In terms of mass percentage, the distribution ratio of vanadium and silicon raw materials is 3:2, and the silicon raw material and vanadium raw material are in order from bottom to top in the water-cooled copper crucible. Vacuum the maglev melting furnace to 2×10 -2 After Pa, continue to feed high-purity Ar gas into the melting chamber, increase the power to 30kW under the protection of high-purity Ar gas, preheat for 5 minutes, increase the power to 100kW after preheating to completely melt the material, and keep the temperature for 15 minutes after the melt hump is formed. Stop the power to cool the alloy melt to room temperature with the furnace, and obtain the V-Si primary ingot. The V-Si primary ingot obtained was turned over 180° and then loaded into a water-cooled copper crucible, and the ...

example 2

[0024] V-Si intermetallic compounds were prepared by using vanadium particles with a purity of 99.95% as raw materials and silicon wafers with a purity of 99.99% as raw materials. In terms of mass percentage, the distribution ratio of vanadium and silicon raw materials is 7:3, and the silicon raw material and vanadium raw material are in sequence from bottom to top in the water-cooled copper crucible. Vacuum the maglev melting furnace to 2×10 -2 After Pa, continue to feed high-purity Ar gas into the melting chamber, increase the power to 50kW under the protection of high-purity Ar gas, and preheat for 8 minutes. After preheating, increase the power to 120kW to completely melt the material. After the melt hump is formed, keep it warm for 10 minutes. Stop the power to cool the alloy melt to room temperature with the furnace, and obtain the V-Si primary ingot. The V-Si primary ingot obtained was turned over 180° and then loaded into a water-cooled copper crucible, and the magnet...

example 3

[0027] V-Si intermetallic compounds were prepared using vanadium ingots with a purity of 99.93% as raw materials and silicon blocks with a purity of 99.95% as raw materials. In terms of mass percentage, the distribution ratio of vanadium and silicon raw materials is 4:1, and the silicon raw material and vanadium raw material are in sequence from bottom to top in the water-cooled copper crucible. Vacuum the maglev melting furnace to 2×10 -2 After Pa, continue to feed high-purity Ar gas into the melting chamber, increase the power to 40kW under the protection of high-purity Ar gas, and preheat for 3 minutes. After preheating, increase the power to 110kW to completely melt the material. After the melt hump is formed, keep it warm for 20 minutes. Stop the power to cool the alloy melt to room temperature with the furnace, and obtain the V-Si primary ingot. The V-Si primary ingot obtained was turned over 180° and then loaded into a water-cooled copper crucible, and the magnetic lev...

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Abstract

The invention discloses a preparation method for a V-Si intermetallic compound. The preparation method comprises two times of magnetic levitation melting. After raw materials are put into a water cooling copper crucible, a magnetic levitation melting is vacuumized, then high-purity Ar gas is continuously pumped in, the temperature is increased under the protection of Ar gas for melting, so that the raw materials are completely melted, after a melt hump is formed, the raw materials are cooled to the room temperature, and thus V-Si primary ingots are obtained; and the V-Si primary ingots are overturned by 180 degrees, then vacuumizing is conducted again, then the temperature is increased, so that the V-Si primary ingots are completely melted, after a melt hump is formed, the V-Si primary ingots are cooled to the room temperature, and the V-Si intermetallic compound is obtained. The preparation method has the beneficial effects that melt is in a suspended state and is small in contact face with the water cooling copper crucible, the crucible contamination is reduced, and the impurity content can be controlled; inert gas protection is adopted for the first time of melting, Si raw material volatilization is reduced, and the composition uniformity is optimized due the second times of melting; and the alloy quality of the V-Si intermetallic compound is high.

Description

technical field [0001] The invention relates to the technical field of preparation of vanadium-silicon intermetallic compounds, and more specifically, relates to a preparation method of V-Si intermetallic compounds. Background technique [0002] Intermetallic compound is a new type of metal-based high-temperature material, which is a kind of covalent compound with long-range ordered structure. Within a certain temperature range (0.5-0.8 T 熔点 ), its yield strength increases with the increase of temperature, and it has good comprehensive properties such as high temperature oxidation resistance, high elastic modulus, high rigidity, and low density. The development of new ultra-high temperature materials, improvement of production technology and product quality can establish and improve my country's superalloy system, make the superalloy materials needed by our country based in the country, and also contribute to the development of metallurgy, petrochemical, enamel products an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C27/02C22C1/02
CPCC22C1/02C22C27/025
Inventor 陈道明刘侠和苏斌邬军李文鹏曲凤盛胡旭峰
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS