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A kind of cadmium iodide two-dimensional material and preparation method thereof

A technology of cadmium iodide and nanosheets, which is applied in the field of nanomaterials, can solve the problems of uneven appearance, thick cadmium iodide, and poor crystallinity, and achieve the effect of good shape, good crystallinity, and good repeatability

Active Publication Date: 2020-01-03
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] An object of the present invention is to solve technical problems such as thick cadmium iodide, uneven appearance, poor crystallinity, and poor appearance in the existing preparation methods. The present invention provides a preparation method for cadmium iodide two-dimensional materials , by changing the substrate, cadmium iodide nanosheets and cadmium iodide heterojunction products can be prepared

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  • A kind of cadmium iodide two-dimensional material and preparation method thereof
  • A kind of cadmium iodide two-dimensional material and preparation method thereof
  • A kind of cadmium iodide two-dimensional material and preparation method thereof

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Effect test

Embodiment 1

[0082]The specific preparation process of this implementation case includes the following steps: Preparation of cadmium iodide nanosheets: Weigh 0.1g of cadmium iodide powder in a porcelain boat, and the porcelain boat is placed in the constant temperature zone of the furnace, and a small piece of Si / 300nmSiO 2 The silicon oxide sheet is used as the growth substrate of the nanosheet, placed in another porcelain boat, and placed in the variable temperature zone downstream of the furnace to obtain an appropriate crystal growth temperature. The furnace is first flushed with argon to remove oxygen and water vapor. Then raise the temperature to 320°C, adjust the argon gas flow rate to 120 sccm, and keep the temperature constant for 20 minutes, and single crystal cadmium iodide nanosheets will be formed on a certain position of the silicon wafer. Optical photos of the prepared cadmium iodide nanosheets are shown in figure 2 .

[0083] figure 2 Optical schematic diagram of the p...

Embodiment 2

[0085] The specific preparation process of this implementation case includes the following steps: Preparation of cadmium iodide nanosheets: Weigh 0.1g of cadmium iodide powder in a porcelain boat, and the porcelain boat is placed in the constant temperature zone of the furnace, and a small piece of Si / 300nmSiO 2 The silicon oxide sheet is used as the growth substrate of the nanosheet, placed in another porcelain boat, and placed in the variable temperature zone downstream of the furnace to obtain an appropriate crystal growth temperature. The furnace is first flushed with argon to remove oxygen and water vapor. Then raise the temperature to 335° C., adjust the argon gas flow to 135 sccm, and keep the temperature constant for 20 minutes. Single crystal cadmium iodide nanosheets will be formed on a certain position of the silicon wafer. Optical photos of the prepared cadmium iodide nanosheets are shown in image 3 .

[0086] image 3 Optical schematic diagram of the prepared ...

Embodiment 3

[0088] The specific preparation process of this implementation case includes the following steps: Preparation of cadmium iodide nanosheets: Weigh 0.1g of cadmium iodide powder in a porcelain boat, and the porcelain boat is placed in the constant temperature zone of the furnace, and a small piece of Si / 300nmSiO 2 The silicon oxide sheet is used as the growth substrate of the nanosheet, placed in another porcelain boat, and placed in the variable temperature zone downstream of the furnace to obtain an appropriate crystal growth temperature. The furnace is first flushed with argon to remove oxygen and water vapor. Then raise it to 350°C, adjust the argon gas flow rate to 150 sccm, and keep the temperature constant for 20 minutes. Single crystal cadmium iodide nanosheets will be formed on a certain position of the silicon wafer. Optical photos of the prepared cadmium iodide nanosheets are shown in Figure 4 .

[0089] Figure 4 Optical schematic diagram of the prepared cadmium ...

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Abstract

The invention discloses a cadmium iodide two-dimensional material which is a cadmium iodide nanosheet or a vertical heterojunction based on the cadmium iodide nanosheet or a cadmium iodide heterojunction array. In addition, the invention also discloses a preparation method of the cadmium iodide two-dimensional material. The preparation method comprises the following steps of: performing physical vapor deposition to cadmium iodide powder at 320-350 DEG C and at a carrier gas flow of 120-150sccm on a substrate surface to prepare the cadmium iodide nanosheet; or performing physical vapor deposition to cadmium iodide powder on a substrate surface, on which a two-dimensional material A grows, to prepare a vertical heterojunction cadmium iodide-two-dimensional material. The cadmium iodide nanosheet and the heterojunction thereof expand a novel two-dimensional material and the two-dimensional heterojunction thereof. The arrayed growth thereof provides new probability of generating and discovering novel excellent electronic apparatuses and equipment. In the preparation process, no complicated operating steps or other raw materials are used, and the equipment is simple.

Description

technical field [0001] The invention belongs to the field of nanomaterials, and relates to two-dimensional cadmium iodide nanosheets, a vertical heterojunction based on cadmium iodide nanosheets and a preparation method for vertical heterojunction arrays thereof [0002] technical background [0003] Cadmium iodide is a layered material. [0004] The discovery of graphene has triggered an upsurge of research on two-dimensional materials in the scientific community. However, graphene has been greatly limited in the fields of electronics and optoelectronics due to its band structure with zero band gap. Single-layer MoS 2 The representative two-dimensional transition metal dichalcogenides (2D-TMDs) have attracted great interest due to their non-zero bandgap. In recent years, there have been many reports on the preparation, property research and application of 2D-TMDs. Recently, people are still actively exploring this different new two-dimensional materials, such as IIIA-VIA ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/12C30B29/64C23C14/06B82Y40/00B82Y30/00
CPCB82Y30/00B82Y40/00C23C14/0694C30B23/00C30B29/12C30B29/64
Inventor 段曦东段镶锋艾若奇
Owner HUNAN UNIV