A LED chip structure based on flip-chip packaging

Abstract

An LED chip structure based on flip-chip packaging belongs to the technical field of optoelectronic devices. The N-type electrode in the LED chip structure is composed of a thin rectangular parallelepiped structure and a zigzag strip-shaped structure connected to the N-type nitride layer 2 through the reflective layer 5, the P-type nitride layer 4 and the light-emitting layer 3. The N-type electrode is inserted through Inside the chip, the local high current of the LED chip is evenly dispersed by the folded-line long N-type electrode, which solves the problem of current edge-collecting effect, and at the same time, the current dispersed by the folded-line long strip reduces the local heat generation. , the heat generated by the LED chip of the present application can be transmitted to the outside world through the zigzag N-type metal electrode and the insulating ceramic in the isolation channel, which increases the heat dissipation path, reduces the heat dissipation thermal resistance, and effectively improves the heat dissipation efficiency of the LED chip. The junction temperature of the LED chip is 8.2°C lower than that of the traditional flip-chip structure, which improves the performance and service life of the LED chip.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, and in particular relates to an LED chip structure based on flip-chip packaging. Background technique [0002] A light emitting diode (LED for short) is a semiconductor electronic component that can convert electrical energy into light energy. This electronic component has the advantages of energy saving, environmental protection, long life, small size, and short response time, and has been widely used in daily life such as decoration, general lighting, backlight display, and automotive lighting. At present, high-power LED is the most widely used, but the defect of high-power LED is that since the electro-optic conversion efficiency of LED is only 15% to 25%, most of the electric energy is released in the form of heat, so with the increase of chip power, high-power LED The problem of self-heating is becoming more and more serious; the heat deposited on the LED chip will not only a...

AI Technical Summary

Problems solved by technology

However, under high current, due to the occurrence of Auger recombination, the current is easy to produce the current edge effect, which makes the LED chip heat up locally, and the luminous efficiency is significantly reduced. Moreover, the heat generated inside the chip can only pass through the P-type LED chip. The nitride layer conducts downward, and the thermal conductivity is relatively large, which is not conducive to the heat transfer of the chip

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