Manufacturing method of diamond wire for efficiently cutting silicon slice

A manufacturing method, diamond wire technology, applied in electrolytic coating, coating, etc., can solve the problems of high diamond particle density, low diamond particle density, and small diamond adhesion, so as to shorten the cutting time, reduce the surface, and stabilize the adhesion Effect

Active Publication Date: 2017-10-27
杨凌美畅科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the technical problems of low diamond particle density, low diamond adhesion, and high diamond particle density but uneven distribution and ag

Method used

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  • Manufacturing method of diamond wire for efficiently cutting silicon slice
  • Manufacturing method of diamond wire for efficiently cutting silicon slice
  • Manufacturing method of diamond wire for efficiently cutting silicon slice

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The diameter of the bus bar used in this embodiment is 80um, such as figure 1 Shown is a schematic diagram of making diamond wire equipment in the present invention. The manufacturing method of the present invention comprises the following steps: (1) impurity removal, (2) cleaning, (3) surface pretreatment, (4) pre-plating, (5) sanding, (6) secondary plating, (7) cleaning, Drying, take-up, the specific steps are as follows:

[0048] (1) Impurity removal, including diamond powder removal and bus bar removal. Diamond micropowder removes impurities at a temperature of 70°C and a concentration of 15% NaOH solution to remove surface oil, and then passes through a concentration of 15% HNO 3 Deoxidation in the solution, both ultrasonic for 300s; the busbar is released from the pay-off wheel 1 through the guide wheel and enters the ultrasonic tank 2 to remove oil stains. The concentration of degreasing powder in the ultrasonic tank 2 is 20g / L, the specific gravity is 3 Contr...

Embodiment 2

[0057] The diameter of the bus bar used in this embodiment is 70um. The manufacturing method of the present invention comprises the following steps: (1) impurity removal, (2) cleaning, (3) surface pretreatment, (4) pre-plating, (5) sanding, (6) secondary plating, (7) cleaning, Drying, take-up, the specific steps are as follows:

[0058] (1) Impurity removal, including diamond powder removal and bus bar removal. Diamond micropowder removes impurities at a temperature of 70°C and a concentration of 17% NaOH solution to remove surface oil, and then passes through a concentration of 17% HNO 3 Deoxidation in the solution, the ultrasonic time is 300s; the busbar is released from the pay-off wheel 1 and enters the ultrasonic tank 2 to remove oil through the guide wheel. The concentration of degreasing powder in the ultrasonic tank 2 is 23g / L, and the water temperature is controlled at 60±2℃ , yes, ultrasonic time 3s.

[0059] (2) Cleaning, the diamond micropowder and the bus bar a...

Embodiment 3

[0067] The diameter of the bus bar used in this embodiment is 65um. The manufacturing method of the present invention comprises the following steps: (1) impurity removal, (2) cleaning, (3) surface pretreatment, (4) pre-plating, (5) sanding, (6) secondary plating, (7) cleaning, Drying, take-up, the specific steps are as follows:

[0068] (1) Impurity removal, including diamond powder removal and bus bar removal. Diamond micropowder removes impurities at a temperature of 80°C and a concentration of 15% NaOH solution to remove surface oil, and then passes through a concentration of 15% HNO 3 Deoxidation in the solution, the ultrasonic time is 360s; the busbar is discharged from the pay-off wheel 1 through the guide wheel and enters the ultrasonic tank 2 to remove oil stains. The concentration of degreasing powder in the ultrasonic tank 2 is 20g / L, and the water temperature is controlled at 60±2℃ , ultrasonic time 4s.

[0069] (2) Cleaning, the diamond micropowder and the bus b...

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Abstract

The invention provides a manufacturing method of a diamond wire for efficiently cutting a silicon slice. The manufacturing method comprises the following steps: (1) discharging the wire and removing impurities; (2) cleaning; (3) performing surface pretreatment; (4) preplating; (5) polishing; (6) plating for the second time; (7) cleaning, drying and collecting the wire. By using the manufacturing method, the facts that the density of diamond particles on the diamond wire is 200 to 350 particles/mm and the protrusion height is 5 to 6 [mu]m can be guaranteed through adjustment on the current distribution of electroplating liquid, pH value, viscosity and liquid velocity, control on the operating speed of a bus and a unique additive adding mode; furthermore, the diamond particles are dispersed on the bus uniformly, the adhesive force is stable and the agglomeration phenomenon is avoided. The diamond wire manufactured by the method can efficiently cut crystal silicon rods of 8.0 inch, 8.2 inch and 8.4 inch and with the length being 650 to 700 mm within 2 hours, the conventional cutting time is shortened by half, bad surfaces and edges of the silicon slice are reduced, and the production efficiency is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of electroplating diamond wire manufacturing, and in particular relates to a method for manufacturing diamond wire for efficiently cutting silicon wafers. Background technique [0002] Hard and brittle materials are increasingly widely used, mainly including silicon crystals, sapphire, glass, stone, quartz, ceramics, hard alloys, rare earth magnetic materials, etc. Since most hard and brittle materials are expensive, the general requirements for processing hard and brittle materials are low loss, high efficiency, low cost, and low pollution. Cutting is currently the most commonly used method for processing hard and brittle materials. Common cutting methods include laser cutting and mechanical cutting. Mechanical cutting is divided into rigid cutting and flexible cutting. With the gradual expansion of the solar photovoltaic industry, the processing of silicon crystals has received more and more attention. T...

Claims

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Application Information

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IPC IPC(8): C25D15/00C25D3/12C25D5/12C25D7/06
CPCC25D3/12C25D5/12C25D7/0607C25D15/00
Inventor 曲东升王新平曹民博
Owner 杨凌美畅科技有限公司
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