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Manufacturing method of silicon carbide MOSFET single-cell structure

A manufacturing method and technology of silicon carbide, applied in the manufacture of semiconductor/solid-state devices, electrical components, transistors, etc., can solve the problems of large channel resistance ratio, low channel mobility, and restrictions on the improvement of device conduction performance. The effect of increasing the length and reducing the channel resistance

Active Publication Date: 2017-11-07
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, silicon carbide is the only wide-bandgap semiconductor material that can achieve a high-quality gate oxide layer through self-oxidation. However, the thermal oxidation technology of silicon carbide is not yet mature, and the mobility of the formed channel is very low, which leads to the channel resistance in the current flow. The proportion of resistance on the path is very large, which seriously restricts the improvement of the conduction performance of the device

Method used

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  • Manufacturing method of silicon carbide MOSFET single-cell structure
  • Manufacturing method of silicon carbide MOSFET single-cell structure
  • Manufacturing method of silicon carbide MOSFET single-cell structure

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Embodiment Construction

[0036] S1: if figure 1 As shown, an ion implantation mask is made on the surface of the silicon carbide epitaxial layer, the ion implantation mask of the PWELL doped region 1 is removed, and the ion implantation mask of the vertical conductive channel region is retained, and the vertical conductive channel region is as follows figure 1 curved as shown;

[0037] S2: Perform first-type ion implantation on the entire chip to form a PWELL region, and the first-type ions are P-type ions;

[0038] S3: if figure 2 As shown, an ion implantation mask is made on the surface of the silicon carbide epitaxial layer, and the ion implantation mask in the N-doped region 2 is removed;

[0039] S4: Perform second-type ion implantation on the entire chip to form an N-implanted region. The channel region is divided into a first channel region 6, a second channel region 7, and a third channel region 8, and the channel lengths are successively reduced; the second The second type of ions are N-t...

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Abstract

The invention discloses a manufacturing method of a silicon carbide MOSFET single-cell structure. A vertical conducting channel region is designed to be curved, so a total length of the vertical conducting channel region can be effectively increased, and then the proportion of the channel resistance in conduction resistance is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a method for manufacturing a silicon carbide MOSFET unit cell structure. Background technique [0002] SiC materials have large bandgap width, high breakdown electric field, high saturation drift velocity and high thermal conductivity. The superior properties of these materials make them ideal materials for making high-power, high-frequency, high-temperature-resistant, and radiation-resistant devices. Silicon carbide MOSFET devices have a series of advantages such as high breakdown voltage, high current density, and driving circuits similar to silicon IGBTs, so the development prospects are very broad. At the same time, silicon carbide is the only wide-bandgap semiconductor material that can achieve a high-quality gate oxide layer through self-oxidation. However, the thermal oxidation technology of silicon carbide is not yet mature, and the mobility of the formed channel is v...

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Application Information

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IPC IPC(8): H01L21/04H01L29/78H01L29/10
CPCH01L21/0445H01L21/0465H01L29/1037H01L29/66068H01L29/78H01L29/0696H01L29/0869H01L29/1033H01L29/1095H01L29/1608H01L29/4238H01L29/7802H01L29/06H01L29/786
Inventor 黄润华柏松陶永洪汪玲
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD