Silicon-derived compound spinning nozzle and preparation method thereof

Abstract

The invention provides a silicon-derived compound spinning nozzle and a preparation method thereof. According to a preset figure, a spinning nozzle body is made of silicon materials and provided with at least one spinning hole, a silicon-derived compound is derived on a whole or local structure of the spinning nozzle body from outside to inside, the derived compound is used for deriving ceramic and silicon oxide function layers on the whole or local structure of the spinning nozzle body, gemstone or diamond layer modification is performed on the spinning nozzle body comprising the derivation compound, and a gemstone layer is formed on the surface of the spinning nozzle body. According to the silicon derivation compound spinning nozzle, the silicon materials serve as whole base raw blanks to prepare the silicon derivation compound spinning nozzle and a gemstone spinning nozzle, silicon oxide, ceramic and gemstone surface modification processes are perfectly integrated, the problems of thermal expansion coefficient mismatch between a modification layer and a substrate layer in an existing spinning nozzle manufacturing process and layering in multi-layer manufacturing are solved, the prepared spinning nozzle has the advantages of acid resistance, alkali resistance, abrasion resistance and high temperature resistance, and mass production is easily achieved.

Description

technical field [0001] The invention relates to the field of micro-electromechanical systems (Micro electro mechanical Systems, MEMS) processing technology, in particular to a method for preparing a spinneret of a silicon derivative compound and the spinneret. Background technique [0002] The spinneret is a very critical component in textile machinery and 3D printing, and its performance will directly affect the quality of printed and woven products. The nozzle structure of the traditional spinneret is mainly obtained by means of precision mechanical drilling, and the nozzle structure is single and the dimensional accuracy is low. [0003] At present, in order to improve processing accuracy and efficiency, UV-LIGA (ultraviolet lithography, electroplating and lamination) technology is proposed to realize batch manufacturing of spinneret holes. However, the metal materials for micro-electroforming using UV-LIGA technology are mainly gold, silver, copper, and nickel. Among t...

AI Technical Summary

Problems solved by technology

Among them, only the strength of nickel can barely meet the high temperature and high pressure requirements of the spinneret, but nickel cannot withstand the long-term erosion of acid and alkali.

If ceramics are used for surface modification, severe cracks will occur on the surface of the spinneret due to the excessive stress surface

In addition, when using UV-LIGA technology, the nozzle and guide hole of the spinneret hole must be processed twice. Due to the need to process twice, the bonding force between layers is not good, resulting in delamination of the nozzle and guide hole. phenomenon appears

UV-LIGA technology adopts electroplating, sputtering and other methods to form the surface protective film. Since it is formed by multiple processes and is not of the same material, during the spinning heating process, the thermal loss is serious, which will cause the spinneret to fail to use normally.

[0004] Furthermore, the Institute of Silicates, Chinese Academy of Sciences, tried to prepare a glass spinneret, but due to the limitation of processing methods, the spinneret can only process conventional circular holes, and the thickness of the processed glass is limited, so it cannot withstand high pressure

Secondly, since the matching cap body is made of metal, thermal failure will often crack the silicon oxide

Shanghai Watch Factory also tried to use the ruby ​​inlay method to make spinnerets, but it was also due to the poor bonding rate between the inlaid spinnerets and the metal substrate, which caused the spinneret holes to fall off and the spinnerets to fail.

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