Low-k material laser processing device and method

Abstract

The invention relates to the technical field of laser processing, and discloses a low-k material laser processing device and method. A laser beam emitted by a laser device sequentially passes through a half-wavelength plate and a first polarizing film and then is split into a laser beam A and a laser beam B; after sequentially passing through a first 45-degree reflector, a first optical shutter and a second 45-degree reflector, the laser beam A passes through a second optical shutter and selectively enters a laser beam shaper, then the laser beam A sequentially enters a second polarizing film and a third 45-degree reflector, and finally the laser beam A enters a focusing mirror and is focused on a processed material; and the laser beam B sequentially passes through a third optical shutter, a prism, the second polarizing film and a fourth 45-degree reflector, and finally enters the focusing mirror to be focused on the processed material. A low-k layer is cut along a cutting path by using a laser, a groove is formed in the cutting path, a silicon substrate is prevented from being affected by the laser while the low-k material is removed, the processing effect is good, and the processed groove is uniform and free o obvious collapse, wavy grains and the like.

Description

technical field [0001] The present invention relates to the technical field of laser processing, and more specifically relates to a laser processing device and method for Low-k materials. Background technique [0002] With the development of integrated circuit technology, the semiconductor industry has entered the submicron era (0.35μm). The continuous reduction in feature size and the increase in the aspect ratio of metal wiring lead to a rapid increase in interconnection capacitance, which causes crosstalk problems. On the other hand, the increase in interlayer parasitic capacitance caused by the increase in the number of layers creates additional interconnection delays, which become In addition to being the main obstacle to increasing circuit speed, parasitic capacitance also increases power consumption, all of which limit the improvement of circuit performance. Finding and developing new low-k materials as media is a key technology. The traditional dielectric material ...

AI Technical Summary

Problems solved by technology

These materials are generally deposited on substrate materials such as silicon by chemical vapor deposition, and are separated into individual core particles by subsequent cutting. At present, diamond knives are used to cut the silicon-based integrated circuit chip, and the low-k layer and the silicon substrate are combined. One-time cutting, the problem is that the appearance of the low-k layer cut by the diamond knife is poor, there are edge chipping, wavy, etc., which affects the final yield

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