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A kind of semiconductor device and its detection method and electronic device

A detection method and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device testing/measurement, semiconductor/solid-state device components, etc., can solve problems such as inability to detect online, reliability risks of wafer devices, etc.

Active Publication Date: 2020-03-06
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Various metal wires are usually formed during the fabrication and packaging of semiconductor devices for electrical connection, and the sidewalls of the metal wires are usually galvanically corroded in subsequent processes, thereby causing galvanic defects. The above-mentioned galvanic defect cannot be detected online, which poses a great risk to the reliability of wafer devices

Method used

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  • A kind of semiconductor device and its detection method and electronic device
  • A kind of semiconductor device and its detection method and electronic device
  • A kind of semiconductor device and its detection method and electronic device

Examples

Experimental program
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Embodiment 1

[0048] Reference below figure 1 with figure 2 The inspection method of the semiconductor device of the present invention is described in detail, figure 1 Shows a flow chart of the detection of the semiconductor device of the present invention; figure 2 Shows a schematic diagram of the detection principle of the semiconductor device of the present invention; image 3 The schematic diagram of the background obtained by collecting the reflected light during the detection of the semiconductor device of the present invention is shown.

[0049] The present invention provides a method for detecting semiconductor devices, such as figure 1 As shown, the main steps of the detection method include:

[0050] Step S1: Provide a wafer on which a metal line with inclined sidewalls is formed;

[0051] Step S2: irradiate the metal wire with direct light and collect the reflected light, and determine whether the metal wire has defects according to the reflected light.

[0052] Hereinafter, specific im...

Embodiment 2

[0085] The present invention also provides a semiconductor device, which includes:

[0086] Wafer

[0087] The metal wire 204 is located above the wafer, and the sidewall of the metal wire is inclined.

[0088] The wafer (not shown in the figure) may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator ( S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc.

[0089] In addition, active areas can be defined on the wafer. The active area may also contain other active devices, which are not marked in the figure for convenience.

[0090] Other material layers can be formed on the wafer. For example, the dielectric layer 202 can be various oxides.

[0091] In an embodiment of the present invention, the dielectric layer 202 can be selected from one or a combination of plasma-enhanced tetraethyl orthosilicate PETEOS layer and tetraethyl orthosilicate TEOS layer.

...

Embodiment 3

[0109] Another embodiment of the present invention provides an electronic device including a semiconductor device, the semiconductor device being the semiconductor device in the foregoing second embodiment, or the semiconductor device manufactured according to the semiconductor device detection method described in the first embodiment .

[0110] The electronic device can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV, VCD, DVD, navigator, camera, camcorder, voice recorder, MP3, MP4, PSP, etc., or It is an intermediate product with the above-mentioned semiconductor devices, such as a mobile phone motherboard with the integrated circuit.

[0111] Since the included semiconductor devices have higher performance, the electronic device also has the above advantages.

[0112] among them, Figure 4 An example of a mobile phone handset is shown. The mobile phone handset 300 is provided with a display portion 302 i...

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Abstract

The invention provides a semiconductor device and a detection method therefor and an electronic apparatus. The detection method comprises the steps of providing a wafer, and forming a metal line with a tilted side wall on the wafer; and performing direct light illumination on the metal line and collecting reflected light, and judging whether the metal line has defects or not according to the reflected light. For solving the problems in the prior art, the reflected light is collected to obtain a background pattern; whether defects exist or not can be judged by judging the background pattern; if the obtained background is dark and gray, it proves that there is no defect; and if the obtained background has bright points, it proves that defects exist. The detection method is simpler and more reliable and capable of accurately finding any defects in the metal line.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a semiconductor device, a detection method thereof, and an electronic device. Background technique [0002] In the field of consumer electronics, multi-function devices are becoming more and more popular with consumers. Compared with devices with simple functions, the production process of multi-function devices will be more complicated. For example, it is necessary to integrate multiple chips with different functions on the circuit board. Based on the 3D integrated circuit (IC) technology, the 3D integrated circuit (IC) is defined as a system-level integrated structure in which multiple chips are stacked in a vertical plane direction to save space. [0003] 3D IC is the original bare die size processor chip, programmable logic gate (FPGA) chip, memory chip, radio frequency chip (RF) or optoelectronic chip, thinned and directly laminated, and connected through TSV drillin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/49H01L21/66
CPCH01L22/12H01L22/24H01L22/32H01L23/49
Inventor 刘立邓贵红赵九洲
Owner SEMICON MFG INT (SHANGHAI) CORP