An electrophoresis system and method suitable for ion-sensitive field-effect sensors
An ion-sensitive, electrophoretic system technology, used in instruments, scientific instruments, material analysis by electromagnetic means, etc., can solve the problems of reduced detection speed and sensitivity of sensors, inability to achieve reliable biological detection, and difficult to detect areas, etc. Sensitivity and accuracy, enabling reusable, flexible genetic testing
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Embodiment 1
[0050] as attachedfigure 1 As shown, the present invention is illustrated with the structure of an ion-sensitive field effect sensor. The channel of this ion-sensitive field effect sensor is directly exposed to the solution, referred to as the exposed channel ISFET sensor. Such as figure 1 As shown, such an ISFET can be implemented in a standard CMOS process, using a polysilicon layer as the channel of the ISFET, and implementing a solution cavity above the channel. Another method is to use the upper layer of single crystal silicon as a channel on a silicon wafer on an SOI (silicon-on-insulator) insulating film. figure 1 Shown is the exposed silicon channel ISFET. This ISFET structure can also use other materials as the channel, such as Ge germanium, SiGe, graphene film, MoS2 film, WSe2 film and so on. In this embodiment, a plate electrode is added above the microfluidic cavity where the channel ISFET is exposed, and a DC or AC voltage with a frequency of 0 Hz-50 MHz and a ...
Embodiment 2
[0059] As shown in Figure 2, a ring electrode is added at the entrance of the microfluidic cavity where the silicon channel ISFET is exposed, and a DC voltage or AC voltage with a frequency of 0 Hz to 50 MHz and a magnitude of 10 mV to 20 V is also applied to the ring electrode through an external circuit. Voltage. Other specific implementations are the same as in Example 1.
[0060] Compared with the plate electrode added above the microfluidic chamber in Example 1, the ring electrode of Example 2 can easily and accurately control the size of the microfluidic diffusion L (the size of L in the previous design is 8 to 12 microns), thereby controlling the electrode to the microfluidic chamber. The magnitude of the voltage applied to the solution in the fluid cavity prevents the bubbles generated by water electrolysis due to excessive voltage from affecting the detection results. The ion field effect sensor-assisted electrophoresis system can efficiently concentrate the ions / mol...
Embodiment 3
[0062] As shown in Figure 3, a ring electrode is also added at the entrance of the microfluidic cavity of the traditional metal gate ISFET, and a DC voltage with a frequency of 0Hz-50MHz and a magnitude of 10mV-20V is applied to the ring electrode through an external circuit. or AC voltage. The voltage applied to the ring electrode by the external circuit is greater than the voltage of the metal grid, forming a potential difference, which acts as an electrophoretic drive for the target molecule and concentrates it on the sensing surface. Other specific implementations are the same as in Example 1.
[0063] The ion field effect sensor assisted electrophoresis system can not only be applied to the exposed silicon channel ISFET, but also can be applied to the traditional metal gate ISFET. This traditional ISFET structure also includes the case where the polysilicon gate is directly exposed to the solution, and is also applicable to the electrophoretic system of the present inven...
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Abstract
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