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Integrated circuit device for integrated EHV (extra-high voltage) resistor and manufacturing method of integrated circuit device

A technology of integrated circuits and manufacturing methods, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as inability to withstand voltage and cannot be directly used to replace high-voltage resistors, saving packaging costs and improving reliability. to improve the integration effect

Inactive Publication Date: 2017-12-12
PEKING UNIV FOUNDER GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the existing semiconductor chip manufacturing process platform, doped polysilicon is usually used to make integrated semiconductor resistors, but such resistors are generally conventional resistors, which cannot withstand voltages above 500V, and cannot be directly used to replace discrete high-voltage resistors.

Method used

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  • Integrated circuit device for integrated EHV (extra-high voltage) resistor and manufacturing method of integrated circuit device
  • Integrated circuit device for integrated EHV (extra-high voltage) resistor and manufacturing method of integrated circuit device
  • Integrated circuit device for integrated EHV (extra-high voltage) resistor and manufacturing method of integrated circuit device

Examples

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Effect test

no. 1 example

[0066] figure 1 It shows the integrated circuit device manufacturing method of the integrated ultra-high voltage resistor provided by the first embodiment of the present invention, such as figure 1 As shown, the manufacturing method of the integrated circuit device integrating ultra-high voltage resistors provided by the first embodiment of the present invention is as follows.

[0067] S1. Form an N-type well region and a P-type well region in the substrate, and form a field oxide layer on a part of the surface of the N-type well region and the P-type well region.

[0068] It should be noted that the selection of the substrate material in this embodiment mainly depends on the following aspects: structural properties, interface properties, chemical stability, thermal properties, electrical conductivity, optical properties and mechanical properties. several aspects. Since silicon is a good conductor of heat, the thermal conductivity of the device is better, thereby achieving t...

no. 2 example

[0101] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, a more specific embodiment is given below, figure 2 It shows a schematic flowchart of a method for manufacturing an integrated circuit device integrating ultra-high voltage resistors provided by the second embodiment of the present invention, as shown in figure 2 As shown, a manufacturing method of an integrated circuit device integrating ultra-high voltage resistors provided by the second embodiment of the present invention is as follows.

[0102] P1, forming N-type well region 1 and P-type well region 2 in substrate 0 (such as Figure 4 shown), and form a field oxide layer 3 in part of the surface of the N-type well region 1 and the P-type well region 2 (such as Figure 5 shown).

[0103]It should be noted that the selection of the substrate O material in this embodiment mainly depends on the following aspects: structural properties, interface properties, chemi...

no. 3 example

[0119] This embodiment provides an integrated circuit device integrating ultra-high voltage resistors, and the integrated circuit device integrating ultra-high voltage resistors is manufactured using the manufacturing method described in the first or second embodiment.

[0120] The integrated circuit device of the integrated ultra-high-voltage resistor of this embodiment integrates a high-voltage resistor capable of withstanding a voltage of more than 500V, and integrates the high-voltage resistor required in the AC-DC power management system into a conventional one at a relatively low cost. In the power management IC, this can improve the integration of the power management module, save the packaging cost of the high-voltage resistance device, and improve the reliability of the module.

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Abstract

The invention discloses an integrated circuit device for an integrated EHV (extra-high voltage) resistor and a manufacturing method of the integrated circuit device. The method comprises the steps: forming an N-type well region and a P-type well region in a substrate, and forming field oxidation layers in some regions on the surfaces of the N-type well region and the P-type well region; forming silicon nitride layers and silicon oxide layers coating the silicon nitride layers in regions, in which high-voltage resistors are prefabricated, of the field oxidation layers; forming a gate oxide layer in a region which is not covered by the field oxidation layers; forming non-doped polysilicon on the silicon oxide layers, the gate oxide layer in the N-type well region and the gate oxide layer in the P-type well region; carrying out the doping of the non-doped polysilicon on the silicon oxide layers to form high-resistance polysilicon, carrying out the non-doped polysilicon on the gate oxide layers to form low-resistance polysilicon. The above method can achieve the integration of a high-voltage resistor which can bear a 500V voltage or more in an integrated circuit, saves the packaging cost, and improves the module reliability.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an integrated circuit device integrating ultra-high voltage resistors and a manufacturing method thereof. Background technique [0002] The high-voltage resistor is generally used as a discrete device packaged separately, and it is combined with a power management integrated circuit (integrated circuit, IC for short), a high-voltage power tube (such as a trench type vertical double diffused field effect transistor (Vertical Double Diffused Metal Oxide Semiconductor, VDMOS for short) , high-voltage triode) and other devices are produced together on the circuit board to realize AC-to-DC (AC-DC) power management and conversion functions. The high-voltage resistor can act as a start-up voltage divider resistor in the circuit, and it needs to withstand a voltage above 500V. [0003] In the existing semiconductor chip manufacturing process platform, doped polysilicon is usually...

Claims

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Application Information

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IPC IPC(8): H01L29/8605H01L29/06H01L21/31
CPCH01L29/8605H01L21/31H01L29/0646
Inventor 石金成马万里高振杰李杰英崔永军
Owner PEKING UNIV FOUNDER GRP CO LTD