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An organic electroluminescent device

A technology for electroluminescent devices and light-emitting devices, which is applied in the fields of electro-solid devices, electrical components, semiconductor devices, etc., can solve the problems of unclear mechanism of action, difficulty in long-term storage and use, and unfavorable industrial production, and achieves vapor deposition atmosphere. Stable, easy to store and use, beneficial to industrial production

Active Publication Date: 2019-01-18
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this has a certain effect, Ag penetrates into Bphen [4,7-diphenyl-1,10-phenanthroline] or BCP [2,9-dimethyl-4,9-diphenyl-1 ,10-Phenanthroline] has a limited amount and can only form composites at the interface, and the mechanism of action is not clear
CN201110325422.2 publicly proposed to dope ETM with active metal M to achieve n-type doping effect, wherein this kind of active metal itself has a low work function, directly acts as a strong reducing n-type dopant, and is not in the air. Stable, difficult to store and use for a long time, not conducive to industrial production

Method used

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  • An organic electroluminescent device
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  • An organic electroluminescent device

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] The structure of a single-electron device:

[0063] ITO / BCP(10nm) / Bphen(90nm) / 10%M-ETM(10nm) / Al;

[0064] First electrode layer 02 (anode ITO) / hole transport layer 05 (BCP) / hole blocking layer 07 (Bphen) / electron transport layer 08 (10% M-ETM) / second electrode layer 03 (cathode Al)

[0065] The host material of the electron transport layer in this embodiment is Bphen, the inert metal doped is Ag, and the active metal Cs (obtained by decomposing cesium carbonate in vacuum) is used in the comparative device. Such as figure 2 As shown, device 1 is the curve corresponding to Al, device 2 is the curve corresponding to Ag / Al, device 3 is the curve corresponding to Cs / Al, device 4 is the curve corresponding to CsBphen / Al, and device 5 is the curve corresponding to AgBphen / Al , device 6 is the curve corresponding to AgBcp / Al, and the cathodes of devices 1-6 are all Al, where:

[0066] The electron transport layer 08 of the device 1 is Bphen (that is, not doped with an inert...

Embodiment 2

[0077] Device structure:

[0078] ITO / HAT-CN(10nm) / NPB(30nm) / Alq 3 (30nm) / Bphen(20nm) / x%Ag:Bphen 10nm / Ag

[0079] The first electrode layer 02 (anode ITO), the hole injection layer 04 (HAT-CN), the hole transport layer 05 (NPB), the light emitting layer 06 (Alq 3 ), hole blocking layer 07 (Bphen), electron transport layer 08 (x%Ag:Bphen), second electrode layer 03 (cathode Ag);

[0080] The host material of the electron transport layer in this embodiment is Bphen, and the doped inert metal is Ag. Such as Figure 3-Figure 6 As shown, device 7 is the curve corresponding to Ag, device 8 is the curve corresponding to Mg:Ag, device 9 is the curve corresponding to 5%, device 10 is the curve corresponding to 10%, device 11 is the curve corresponding to 25%, device 7 And Ag in device 8, Mg:Ag is metal cathode respectively, and its electron transport layer material is Bphen; The metal cathode of device 9, device 10 and device 11 is Ag;

[0081] in:

[0082] The electron transport...

Embodiment 3

[0087] Device structure:

[0088] ITO / HATCN(10nm) / NPB(30nm) / Alq 3(30nm) / Bphen(20nm) / x%Ag-Bphen 10nm / Mg:Ag / Ag

[0089] The first electrode layer 02 (anode ITO), the hole injection layer 04 (HATCN), the hole transport layer 05 (NPB), the light emitting layer 06 (Alq 3 ), hole blocking layer 07 (Bphen), electron transport layer 08 (x%Ag-Bphen), second electrode layer 03 (cathode Mg:Ag / Ag);

[0090] The host material of the electron transport layer in this embodiment is Bphen, and the doped inert metal is Ag. Such as Figure 7-Figure 10 As shown, device 12 is the curve corresponding to Ag, device 13 is the curve corresponding to Mg:Ag, device 14 is the curve corresponding to 5%, device 15 is the curve corresponding to 10%, device 16 is the curve corresponding to 20%, device 12 And Ag in device 13, Mg:Ag is metal cathode respectively, and its electron transport layer material is Bphen; The metal cathode of device 14, device 15 and device 16 is Ag;

[0091] Wherein: the materia...

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Abstract

The present invention relates to an organic electroluminescence device, comprising a substrate, and a light-emitting device sequentially formed on the substrate, the light-emitting device comprising a first electrode layer, a hole injection layer, a hole transport layer, a light-emitting layer, a hole A hole blocking layer, an electron transport layer and a second electrode layer, the electron transport layer includes an electron transport host material with coordination ability and an inert metal doped in the electron transport host material; the electron transport host material is Electron transport materials with coordination properties can undergo coordination reactions with inert metal cations to promote the process of inert metals losing electrons, thereby reducing the work function of inert metals and enabling inert metals to achieve n-type doping similar to active metals The effect is to reduce the LUMO energy level of the electron transport material, thereby promoting the injection of electrons, thereby significantly reducing the driving voltage of the device and improving the efficiency of the device.

Description

technical field [0001] The invention relates to the technical field of organic electroluminescent devices, in particular to an organic electroluminescent device in which an electron transport layer containing a coordination ability material is doped with an inert metal to achieve an n-type doping effect. Background technique [0002] Organic Light Emitting Diode (OLED) is a multilayer organic thin film structure device that can emit light through electroluminescence. It has a variety of display characteristics and quality beyond LCD (Liquid Crystal Display). With its excellent characteristics such as low energy consumption and flexibility, it has a good application prospect and will become the next generation of mainstream flat-panel displays. [0003] In OLEDs, the LUMO energy level of the commonly used electron transport material (ETM) is around -3.0eV, and the work function of the metal cathode is generally greater than 4.0eV, so when electrons are directly injected from ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54
CPCH10K85/331H10K85/371H10K85/381H10K50/165H10K50/00
Inventor 段炼宾正杨
Owner TSINGHUA UNIV
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