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A kind of black low-temperature sintered microwave dielectric ceramic material and its preparation method and application

A microwave dielectric ceramic and low-temperature sintering technology, which is applied in the field of microwave dielectric ceramics, can solve the problems of affecting signal transmission speed, complex process, high difficulty, etc., and achieve the advantages of microwave dielectric characteristics, simple firing process, and manufacturing cost advantages.

Active Publication Date: 2021-01-15
JIAXING GLEAD ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The black alumina multilayer ceramic substrate has the following disadvantages: (1) high dielectric constant, which affects the improvement of signal transmission speed; (2) conductor materials tungsten and molybdenum have high resistivity, and signal transmission loss is large, which limits high-frequency applications; (3) The coefficient of thermal expansion is quite different from that of silicon
(4) The HTCC process requires a protective atmosphere (usually N 2 and H 2 Mixed gas) sintering, the process is complex, difficult, high sintering temperature (usually 1500-1600°C), and high process cost
LTCC technology uses ordinary air atmosphere sintering, which is simpler than HTCC technology, but because a large amount of glass components are usually added to low-temperature co-fired ceramic materials, the sintering porosity is high and the mechanical strength is relatively low

Method used

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  • A kind of black low-temperature sintered microwave dielectric ceramic material and its preparation method and application
  • A kind of black low-temperature sintered microwave dielectric ceramic material and its preparation method and application
  • A kind of black low-temperature sintered microwave dielectric ceramic material and its preparation method and application

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preparation example Construction

[0034] The preparation method of the black low-temperature sintered microwave dielectric ceramic material provided by the invention comprises the following steps.

[0035] Preparation of aluminoborosilicate glass: Proportion by mass: 0~10%A 2 O(Li 2 O, Na 2 O or K 2 One or more of O), 0-20% RO (one or more of MgO, CaO, BaO), 10-30% Al 2 o 3, 10~30%B 2 o 3 , 30-65% SiO 2 . Weigh Li 2 CO 3 、Na 2 CO 3 or NaHCO 3 、K 2 CO 3 or KHCO 3 , MgO or basic magnesium carbonate, CaCO 3 , SrCO 3 、BaCO 3 , B 2 o 3 or H 3 BO 3 、Al 2 o 3 and SiO 2 , choose ZrO 2 Grinding balls, mixed by dry method for 1-6 hours, then put the mixed powder into a platinum crucible, heated to the melting temperature of 1400-1550°C, kept warm and homogenized for 0.5-1 hour, then poured into water to quench. The obtained glass fragments are ball milled and dried to obtain a glass powder with a particle size D50 of 1.5-3.0 μm.

[0036] Black colorant CuCr 2 o 4 Preparation: Weigh Cr at a ...

Embodiment 1-2

[0044] The composition of the aluminoborosilicate glass in this embodiment is shown in Table 1, and the composition of the black low-temperature sintered microwave dielectric ceramic material is shown in Table 2.

[0045] The preparation process of the black low-temperature co-fired microwave dielectric ceramic material of this embodiment is as follows:

[0046] (1) Preparation of aluminoborosilicate glass: take by weighing Na according to the mass ratio in Table 1 2 CO 3 or NaHCO 3 、K 2 CO 3 or KHCO 3 , MgO or basic magnesium carbonate, CaCO 3 , B 2 o 3 or H 3 BO 3 、Al 2 o 3 and SiO 2 , choose ZrO 2 Grinding balls, mixed by dry method for 4 hours, then put the mixed powder into a platinum crucible, heated to the melting temperature of 1550 ° C, kept warm for 1 hour, and then poured into water to quench. The obtained glass fragments were ball milled and dried to obtain a glass powder with a particle size D50 of 2.5 μm.

[0047] (2) black colorant CuCr 2 o 4 Pr...

Embodiment 3-6

[0051] The composition of the aluminoborosilicate glass in this embodiment is shown in Table 1, B and C, and the composition of the black low-temperature sintered microwave dielectric ceramic material is shown in Table 2.

[0052] The preparation process of the black low-temperature co-fired microwave dielectric ceramic material of this embodiment is as follows:

[0053] (1) Preparation of aluminoborosilicate glass: take Li according to the mass ratio in Table 1 2 CO 3 、Na 2 CO 3 or NaHCO 3 、K 2 CO 3 or KHCO 3 , MgO or basic magnesium carbonate, SrCO 3 、BaCO 3 , B 2 o 3 or H 3 BO 3 、Al 2 o 3 and SiO 2 , choose ZrO 2 Grinding balls, mixed by dry method for 4 hours, then put the mixed powder into a platinum crucible, heated to the melting temperature of 1500°C, kept warm and homogenized for 1 hour, then poured into water to quench. The obtained glass fragments were ball milled and dried to obtain a glass powder with a particle size D50 of 2.5 μm.

[0054] (2) b...

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Abstract

The invention belongs to the field of microwave dielectric ceramics, and relates to a black low-temperature sintered microwave dielectric ceramic material and its preparation method and application. A black low-temperature sintered microwave dielectric ceramic material, the ceramic material includes alumina, aluminoborosilicate glass and black colorant, and the mass percentage is composed of: alumina 40-60%; aluminoborosilicate glass 38-58% ; Black colorant 2 to 10%. The ceramic substrate prepared by using the ceramic material through the LTCC process technology has the characteristics of simple firing process, high mechanical strength, excellent dielectric properties, and light-shielding properties. Can replace HTCC package substrate.

Description

technical field [0001] The invention belongs to the field of microwave dielectric ceramics, and relates to a black low-temperature sintered microwave dielectric ceramic material and a preparation method and application thereof. Background technique [0002] High Temperature Co-fired Ceramics (HTCC for short) technology is a relatively mature microelectronic ceramic packaging technology. HTCC technology is applied to semiconductor packaging and has high strength, good air tightness, good heat dissipation, and integration High, flexible design and other characteristics, has been widely used in the packaging of crystal oscillators, MEMS sensors, image sensors, power devices, surface acoustic wave devices, optical communication modules, etc. Black alumina material is commonly used in HTCC technology. Due to the obvious photosensitivity of semiconductor integrated circuits, it is required that the alumina ceramics used as the package shell have light-shielding properties, and ar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/10C04B35/622C03C3/064C03C3/091
CPCC03C3/064C03C3/091C04B35/10C04B35/622C04B2235/3241C04B2235/3281C04B2235/36C04B2235/77C04B2235/96C04B2235/9607C04B2235/9661
Inventor 童建喜黄聪叶春燕何利松
Owner JIAXING GLEAD ELECTRONICS CO LTD
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