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Low resistivity CaMnO3 composite thermoelectric material preparation method

A technology of thermoelectric materials and low resistivity, which is applied in the manufacture/processing of thermoelectric devices, and lead wire materials of thermoelectric device nodes, etc. It can solve the problems of long preparation time, high production cost, and high resistivity of thermoelectric materials, so as to reduce production Cost, production time reduction, effect of reducing resistivity

Active Publication Date: 2017-12-22
GUIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the existing methods all use the solid-phase method, in fact, the solid-phase reaction is used to add Bi to the system. 2 o 3 , because the raw materials require sufficient solid-state reaction, the preparation time is long, the operation is complicated, and the production cost is high, which limits their wide application in industry, and the resistivity of the prepared thermoelectric materials is also relatively high

Method used

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  • Low resistivity CaMnO3 composite thermoelectric material preparation method

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Effect test

Embodiment 1

[0031] Embodiment 1, a kind of low resistivity CaMnO 3 A method for preparing a composite thermoelectric material, the specific steps of the method are as follows:

[0032] (1) Dissolve calcium nitrate and manganese nitrate in water at a molar ratio of Ca:Mn=1:1 to obtain 1mol L of calcium nitrate and manganese nitrate -1 mixed solution, and then NH 4 HCO 3 The solution was added to the calcium-manganese mixed nitrate solution, and reacted under the reaction conditions of a reaction temperature of 50°C and a stirring speed of 500r / min until the precipitation was complete to obtain product A;

[0033] (2) Precipitate and age product A for 1 hour, filter and wash, and dry at 100°C to obtain product B;

[0034] (3) Mix bismuth metal and product B at a molar ratio of bismuth metal: product B = 1:25, and grind for 9 hours to obtain product C;

[0035](4) Pre-fire product C in a sintering furnace at 900°C for 9 hours, then put it into a mold, and press it under a pressure of 9 M...

Embodiment 2

[0037] Embodiment 2, a kind of low resistivity CaMnO 3 A method for preparing a composite thermoelectric material, the specific steps of the method are as follows:

[0038] (1) Dissolve calcium nitrate and manganese nitrate in water at a molar ratio of Ca:Mn=1:0.5 to obtain 1mol L of calcium nitrate and manganese nitrate -1 mixed solution, and then NH 4 HCO 3 The solution was added to the calcium-manganese mixed nitrate solution, and reacted under the reaction conditions of a reaction temperature of 40°C and a stirring speed of 600r / min until the precipitation was complete to obtain product A;

[0039] (2) Precipitate and age product A for 0.5 hours, filter and wash, and dry at 80°C to obtain product B;

[0040] (3) Mix metal bismuth and product B at a molar ratio of metal bismuth: precursor powder = 1:10, grind for 6 hours to obtain product C;

[0041] (4) Pre-fire product C in a sintering furnace at 850°C for 11 hours, then put it into a mold, and press it under a pressu...

Embodiment 3

[0043] Embodiment 3, a kind of low resistivity CaMnO 3 A method for preparing a composite thermoelectric material, the specific steps of the method are as follows:

[0044] (1) Dissolve calcium nitrate and manganese nitrate in water at a molar ratio of Ca:Mn=1:1.5 to obtain 1mol L of calcium nitrate and manganese nitrate -1 mixed solution, and then NH 4 HCO 3 The solution was added to the calcium-manganese mixed nitrate solution, and reacted under the reaction conditions of a reaction temperature of 60°C and a stirring speed of 400r / min until the precipitation was complete, and product A was obtained;

[0045] (2) Precipitate and age product A for 2 hours, filter and wash, and dry at 120°C to obtain product B;

[0046] (3) Mix bismuth metal with product B at a molar ratio of bismuth metal: precursor powder = 1:50, grind for 6 hours, and obtain product C;

[0047] (4) Pre-sinter product C in a sintering furnace at 950°C for 7 hours, then put it into a mold, and press it und...

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Abstract

The invention discloses a low resistivity CaMnO3 composite thermoelectric material preparation method comprising the following steps: 1, mixing a calcium nitrate solution with a manganous nitrate solution so as to obtain a mixed liquor, adding cetyl trimethyl ammonium bromide into the mixed liquor, adding NH4HCO3 into the mixed liquor, and depositing to obtain A product; 2, filtering the A product, depositing and drying, and obtaining B product; 3, adding metal bismuth into the B product and evenly mixing same to obtain C product; 4, loading the C product into a die, and moulding to form D product; 5, sintering the D product so as to obtain the low resistivity CaMnO3 composite thermoelectric material. The low resistivity CaMnO3 composite thermoelectric material preparation method is short in preparation time, simple in operations, low in production cost, the obtained material is low in resistivity, and the method can be widely applied to the industrial production.

Description

technical field [0001] The present invention relates to a kind of CaMnO 3 Preparation method of composite thermoelectric material, especially a kind of low resistivity CaMnO 3 Preparation method of composite thermoelectric material. Background technique [0002] Thermoelectric materials (thermoelectric materials) can realize the mutual conversion of heat energy and electric energy, which makes it a green and environmentally friendly energy conversion material that converts waste heat into electricity. The efficiency of thermoelectric materials can be expressed by the dimensionless thermoelectric figure of merit, ZT=S 2 T / ρκ, S is the Seebeck coefficient (or heat work, unit V K -1 ), ρ and κ are resistivity and thermal conductivity, respectively, and T is absolute temperature. Semiconductors have a lower carrier density, resulting in a larger S value, and the κ value is mainly dominated by phonon thermal conductivity. Thermal conductivity can be achieved by doping atoms wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/18H01L35/26H01L35/22H10N10/01H10N10/853H10N10/855H10N10/857
CPCH10N10/853H10N10/857H10N10/855H10N10/01
Inventor 李翠芹陈前林赵颖周栋珍孙丽娟文娅
Owner GUIZHOU UNIV
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