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Preparation method of cesium lead bromine inorganic perovskite film and photovoltaic device based on it

A photovoltaic device, inorganic calcium technology, applied in photovoltaic power generation, semiconductor devices, electrical components, etc., can solve the problems of thin film soaking easy to fall off, limited solubility of Br, etc., achieve good stability and repeatability, and good substrate coverage , easy-to-magnify effect

Active Publication Date: 2019-02-12
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For existing CsPbBr 3 The solution method preparation problem of light-absorbing layer thin film, the invention provides a kind of Br 2 Stable CsPbBr prepared by vapor thermal injection vapor deposition 3 Light-absorbing layer to effectively solve the bottleneck problem of limited Br solubility in the traditional one-step solution method, and at the same time avoid problems such as easy peeling off of the film in the two-step solution method

Method used

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  • Preparation method of cesium lead bromine inorganic perovskite film and photovoltaic device based on it
  • Preparation method of cesium lead bromine inorganic perovskite film and photovoltaic device based on it
  • Preparation method of cesium lead bromine inorganic perovskite film and photovoltaic device based on it

Examples

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Embodiment 1

[0029] CsPbBr in this example 3 Film Br 2 The steam heat injection vapor deposition preparation method comprises the following steps:

[0030](1) CsPbI 3 Precursor thin film preparation: take 0.55mmol of PbI 2 (0.254g) and 0.55mmol of CsI (0.143g) powder were dissolved in 1mL of DMF (N,N-dimethylformamide) solvent to form a yellow CsPbI with a concentration of 0.55mol / L 3 solution. In FTO / c-TiO 2 / m-TiO 2 spin-coated CsPbI 3 Precursor solution, spin-coating speed is 2000rpm, spin-coating time is 30s, and then the film is placed on a heating platform at 100°C for 10min to obtain yellow δ-phase CsPbI 3 Precursor film.

[0031] (2) CsPbBr 3 Film preparation: as figure 1 As shown, the yellow δ-phase CsPbI 3 The precursor film was transferred to a tube furnace, and after the quartz tube was evacuated to 10Pa with a vacuum pump, the temperature of the tube furnace was raised to 150°C, and then 200mL of Br 2 Pass the steam into the quartz tube, react for 30 minutes, and g...

Embodiment 2

[0045] This embodiment prepares CsPbBr in the same manner as in Example 1 3 film, the difference is that in step (2), the temperature of the tube furnace is set to 200°C.

[0046] After characterization, the CsPbBr obtained in this example 3 The film is similar to Example 1, all of which are black cubic phases, very dense and of high quality.

Embodiment 3

[0048] This embodiment prepares CsPbBr in the same manner as in Example 1 3 For thin films, the difference is that the temperature of the tube furnace in step (2) is set to 250°C.

[0049] After characterization, the CsPbBr obtained in this example 3 The film is similar to Example 1, all of which are black cubic phases, very dense and of high quality.

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Abstract

The invention discloses a preparation method for a cesium lead bromide inorganic perovskite thin film and a photovoltaic device based on the cesium lead bromide inorganic perovskite thin film. An unstable yellow oblique-phase CsPbI3 thin film is prepared by employing a one-step solution method and then is converted to a stable black cubic-phase CsPbBr3 thin film by employing a Br2 steam thermal injection gas-phase deposition method. Gas-phase exchange reaction of halide ions is utilized, I<-> in CsPbI3 is substituted by Br<-> with smaller radius, the purpose of lattice shrinkage, phase changesuppression and stability improvement are achieved, the bottleneck problem that Br solubility of a traditional one-step solution method is limited can be effectively solved, and the problems that thethin film is easy to fall during immersion of a two-step solution method also can be prevented; and meanwhile, the prepared CsPbBr3 thin film is also used as a light absorption layer to prepare an FTO / c-TiO2 / m-TiO2 / CsPbBr3 / C perovskite solar cell with an all-inorganic structure, the photoelectric efficiency of a battery in initial batch reaches 3.23%, and the battery shows favorable long-term stability.

Description

technical field [0001] The invention relates to a cesium-lead-bromine inorganic perovskite thin film and a method for preparing a photovoltaic device thereof, belonging to the field of thin-film solar cell materials and devices. Background technique [0002] In recent years, high-efficiency, low-cost new organic-inorganic hybrid perovskite solar cells have attracted widespread attention due to their excellent photoelectric properties; It is easy to absorb moisture and has serious thermal stability problems, which limit the practical application of this new type of battery. Such as: MAPbI 3 The organic cations in the organic cations are weakly combined with the lattice, and begin to decompose at 85°C, and undergo a tetragonal to cubic phase transition at 55°C; FAPbI 3 Although it is stable in a dry environment, it is very easy to react with moisture, resulting in rapid inertness of performance; while the traditional hole transport layer Spiro-OMeTAD is not only expensive, b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/072H01L31/18
CPCY02E10/50Y02P70/50
Inventor 罗派峰周圣稳周宇罡夏伟
Owner HEFEI UNIV OF TECH
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