Nanowire p-n heterojunction and preparation method thereof

Abstract

The invention provides a preparation method of nanowire p-n heterojunction, and belongs to the field of heterojunction material preparation. A p type quantum dot or n type quantum dot is mixed with aconducting polymer and a benzene type organic solvent to obtain a p type or n type quantum dot doped mixed solution; the p type or n type quantum dot doped mixed solution is subjected to drawing to obtain a p type or n type nanowire; finally, under the optical microscope, the p type and the n type nanowire are subjected to micro operation to obtain a crossed structure, i.e., the nanowire p-n heterojunction is obtained. A direct drawing technology and a micro operation and control technology are combined for realizing fast preparation of the nanowire p-n heterojunction; the method does not needthe complicated technological process; the difficult problem that a template is difficult to obtain is solved, so that the preparation of the nanowire p-n heterojunction is economic and efficient.

Description

technical field [0001] The invention relates to the field of preparation of heterojunction materials, in particular to a nanowire p-n heterojunction and a preparation method thereof. Background technique [0002] Nanowire p-n heterojunctions have attracted extensive attention from researchers due to their excellent light emission, photoconductivity, photovoltaic and rectification properties. The excellent properties exhibited by nanowire p-n heterojunctions are not only the simple superposition of individual material properties, but also the synergistic contribution of the heterointerface formed between individual materials, which can produce the effect of one plus one greater than two. [0003] In the prior art, the preparation methods of nanowire p-n heterojunction mainly include: chemical vapor deposition, solid phase reaction combination, pulsed laser deposition and template-assisted synthesis. The main disadvantage of chemical vapor deposition is expensive equipment an...

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Problems solved by technology

The main disadvantage of chemical vapor deposition is expensive equipment and high cost; the disadvantage of solid-phase reaction combination is that it needs ultra-high vacuum to avoid the volatilization of reactants; the disadvantage of pulsed laser deposition is that pulsed laser equipment is required, and it is difficult to prepare high-purity samples; template The steps of auxiliary synthesis are: evaporation of gold film on the side of alumina template, electrodeposition of organic polymer materials, electrodeposition of inorganic semiconductor materials, dissolution of alumina templates, the presence of templates is difficult to obtain, and the diameter, length and number of micropores are difficult to control , the disadvantage of complex process

In summary, the existing methods for preparing nanowire p-n heterojunctions have the problems of high production cost and complicated process flow.

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