Supercharge Your Innovation With Domain-Expert AI Agents!

Indium electroplating composition containing 1,10-phenanthroline compound and method of electroplating indium

A composition and compound technology, applied in the direction of circuits, semiconductor devices, etc., can solve problems such as insufficient performance TIM, and achieve the effect of reducing damage

Active Publication Date: 2020-11-06
ROHM & HAAS ELECTRONICS MATERIALS LLC
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While the aforementioned TIMs have been sufficient for a variety of semiconductor devices, increases in the performance of semiconductor devices have made such TIMs insufficient

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Indium electroplating composition containing 1,10-phenanthroline compound and method of electroplating indium
  • Indium electroplating composition containing 1,10-phenanthroline compound and method of electroplating indium
  • Indium electroplating composition containing 1,10-phenanthroline compound and method of electroplating indium

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0053] Example 1 (comparison)

[0054] Photoresist patterned silicon wafers from Silicon Valley Microelectronics, Inc. using NIKAL from Dow Advanced Materials TM BP nickel plating bath plated with a layer of nickel, the silicon wafer had a plurality of via holes with a diameter of 75 μm and a copper seed layer at the base of each via hole. Nickel plating was performed at 55°C for 120 seconds at a cathodic current density of 1 ASD. A conventional rectifier supplies the current. The anode is a soluble nickel electrode. After plating, the silicon wafer was removed from the plating bath with a SHIPLEY BPR from Dow Advanced Materials TM The photo stripper strips the photoresist from the wafer and rinses with water. The nickel deposit appeared to be substantially smooth without any observable dendrites on the surface. Figure 1A for LEICA TM Optical image of one of the nickel-plated copper seed layers taken by an optical microscope.

[0055] The following aqueous indium elect...

example 2

[0061] The method described in Example 1 above was repeated except that the indium electroplating composition included the following components:

[0062] Table 2

[0063]

[0064]

[0065] A nickel plated silicon wafer is immersed in the indium electroplating composition and indium metal is plated on the nickel. Indium plating was performed at a current density of 4ASD for 30 seconds at 25°C. The pH of the composition is 2.1. The anode is an indium soluble electrode. After indium was electroplated on the nickel layer, the photoresist was stripped from the wafer and the indium morphology was observed. All indium deposits appeared uniform and smooth.

[0066] figure 2 is an optical microscope image of one of the indium metal deposits electroplated on a nickel layer. compared to Figure 1B Indium deposits, indium deposits appear smooth.

example 3

[0068] The method described in Example 2 above was repeated except that the indium electroplating composition included the following components:

[0069] table 3

[0070] components quantity Indium Sulfate 45g / L citric acid 96g / L Sodium Citrate Dihydrate 59g / L 1,10-phenanthroline 4ppm Sodium chloride 1

50g / L

[0071] 1 The molar ratio of chlorine: indium ion = 5:1

[0072] The pH of the indium composition is 2.4. A nickel plated silicon wafer is immersed in the indium electroplating composition and indium metal is plated on the nickel. Indium plating was performed at a current density of 4ASD for 30 seconds at 25°C. The anode is an indium soluble electrode. After indium was electroplated on the nickel layer, the photoresist was stripped from the wafer and the indium morphology was observed. All indium deposits appeared uniform and smooth.

[0073] image 3 is an optical microscope image of one of the indium metal d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
molecular weightaaaaaaaaaa
aspect ratioaaaaaaaaaa
Login to View More

Abstract

Indium electroplating compositions containing trace amounts of 1,10-phenanthroline compounds plate indium with a substantially defect-free uniform and smooth surface morphology on metal layers. The indium electroplating compositions are useful for electroplating indium metal on metal layers of various substrates such as semiconductor wafers and as thermal interface materials.

Description

technical field [0001] The present invention relates to indium electroplating compositions containing trace amounts of 1,10-phenanthroline compounds and methods for electroplating indium metal on metal layers. More specifically, the present invention relates to indium electroplating compositions containing trace amounts of 1,10-phenanthroline compounds and methods of electroplating indium metal on metal layers, wherein the indium metal deposit is uniform, substantially void-free, and has a smooth surface morphology. Background technique [0002] The ability to reproducibly plate void-free uniform indium with targeted thickness and smooth surface morphology on metal layers is challenging. Indium reduction occurs at a more negative potential than proton reduction, and significant hydrogen bubbling at the cathode results in increased surface roughness. Indium (1 + ) ions catalyze proton reduction and participate in disproportionation reactions to regenerate indium (3 + )ion...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/54
CPCC25D3/54C25D5/022C25D7/123C25D5/611
Inventor Y·秦K·弗拉伊斯里克M·列斐伏尔
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com