Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing silicon nanowire array based on metal assisted chemical etching technique

A silicon nanowire array and chemical etching technology, which is applied in the field of semiconductor nanomaterial preparation, can solve the problems of cumbersome process, high equipment requirements, and high production cost, and achieve the effect of solving cumbersome process

Inactive Publication Date: 2018-01-26
YUNNAN UNIV
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The silicon nanowire solar cell designed based on the present invention can be used to solve the common shortcoming of low photoelectric conversion efficiency in current solar cells, and to a certain extent, solve the cumbersome process, high equipment requirements, The problem of high preparation cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing silicon nanowire array based on metal assisted chemical etching technique
  • Method for preparing silicon nanowire array based on metal assisted chemical etching technique
  • Method for preparing silicon nanowire array based on metal assisted chemical etching technique

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Cleaning of silicon wafers: ultrasonically clean with acetone and absolute ethanol for 15-20 minutes in sequence, and then place the silicon wafers in H with a volume ratio of 1:1. 2 SO 4 and H 2 o 2 Boil them in the mixed solution for 3-5 minutes, then soak them in HF solution with a mass fraction of 3%-5% for 60-90s, and finally wash them with deionized water for 2-3 times, and then wash them with N 2 Blow dry; after each of the above steps is completed, it needs to be rinsed with deionized water 2 to 3 times;

[0025] (2) Deposition of Ag particles: Prepare the concentration ratio of HF:AgNO in a dark environment 3 =4.0 mol / L:0.005 mol / L equal-volume mixed solution, then ultrasonicated the plastic beaker containing the mixed solution for 5min, then placed the silicon wafer obtained in step (1) in the mixed solution, let it stand for 120s, and deposited Ag particles;

[0026] (3) Etching of nanowires: put the silicon wafer obtained in step (2) into a volume r...

Embodiment 2

[0031] (1) Cleaning of silicon wafers: ultrasonically clean with acetone and absolute ethanol for 15-20 minutes in sequence, and then place the silicon wafers in H with a volume ratio of 1:1. 2 SO 4 and H 2 o 2 Boil them in the mixed solution for 3-5 minutes, then soak them in HF solution with a mass fraction of 3%-5% for 60-90s, and finally wash them with deionized water for 2-3 times, and then wash them with N 2 Blow dry; after each of the above steps is completed, it needs to be rinsed with deionized water 2 to 3 times;

[0032] (2) Deposition of Ag particles: Prepare the concentration ratio of HF:AgNO in a dark environment 3 =5.0 mol / L: equal volume of 0.01 mol / L mixed solution, then sonicate the plastic beaker containing the mixed solution for 5min, then place the silicon wafer obtained in step (1) in the mixed solution, let it stand for 90s, and deposit Ag particles;

[0033] (3) Etching of nanowires: put the silicon wafer obtained in step (2) into a volume ratio of...

Embodiment 3

[0038] (1) Cleaning of silicon wafers: ultrasonically clean with acetone and absolute ethanol for 15-20 minutes in sequence, and then place the silicon wafers in H with a volume ratio of 1:1. 2 SO 4 and H 2 o 2 Boil them in the mixed solution for 3-5 minutes, then soak them in HF solution with a mass fraction of 3%-5% for 60-90s, and finally wash them with deionized water for 2-3 times, and then wash them with N 2 Blow dry; after each of the above steps is completed, it needs to be rinsed with deionized water 2 to 3 times;

[0039] (2) Deposition of Ag particles: Prepare the concentration ratio of HF:AgNO in a dark environment 3=5.0 mol / L: equal volume of 0.005 mol / L mixed solution, then sonicate the plastic beaker containing the mixed solution for 5 minutes, then place the silicon wafer obtained in step (1) in the mixed solution, let it stand for 110s, and deposit Ag particles;

[0040] (3) Etching of nanowires: put the silicon wafer obtained in step (2) into a volume ra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Widthaaaaaaaaaa
Lengthaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a method for preparing a silicon nanowire array based on a metal-assisted chemical etching technique and belongs to the semiconductor nanomaterial preparation technical field. According to the method of the invention, a mixed solution of hydrofluoric acid (HF) and silver nitrate (AgNO3) with a certain parameter, is prepared, and the solution is subjected to ultrasonic mixing for 3 to 5 minutes; a cleaned silicon wafer is arranged in the mixed solution, so that Ag particles can be deposited; and the silicon wafer is arranged in a mixed solution of hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with a certain parameter, and therefore, a length-controllable silicon nanowire array is prepared through using the principle that the mixed solution, the Ag particles and the silicon wafer can form a primary battery. The method has the advantages of low cost, simple process and high production efficiency and the like. With the method adopted, a simple and convenient approach is provided for the preparation of silicon nanowire solar batteries.

Description

technical field [0001] The invention relates to a method for preparing semiconductor nanomaterials, in particular to a method for preparing silicon nanowire arrays based on metal-assisted chemical etching technology. Background technique [0002] Nanowire, also known as quantum wire, is a one-dimensional semiconductor material that is confined below 100nm in the lateral direction and has no restriction in the vertical direction. In nanowires, the movement of electrons (or holes) in the lateral direction is restricted, which will produce a series of quantum effects, such as surface effects, Coulomb blocking effects, quantum confinement effects, small size effects, and light trapping properties. The above effects are all beneficial to the design of nanowire solar cells. Among them, the surface effect and small size effect make the reflection coefficient of nanowires significantly decrease, which will significantly increase the absorption rate of the spectrum, resulting in exce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/306H01L31/18B82Y40/00
CPCY02P70/50
Inventor 杨宇周志文王荣飞杨杰王茺
Owner YUNNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com