Method for preparing silicon nanowire array based on metal assisted chemical etching technique

A silicon nanowire array and chemical etching technology, which is applied in the field of semiconductor nanomaterial preparation, can solve the problems of cumbersome process, high equipment requirements, and high production cost, and achieve the effect of solving cumbersome process

Inactive Publication Date: 2018-01-26
YUNNAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The silicon nanowire solar cell designed based on the present invention can be used to solve the common shortcoming of low photoelectric conversion

Method used

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  • Method for preparing silicon nanowire array based on metal assisted chemical etching technique
  • Method for preparing silicon nanowire array based on metal assisted chemical etching technique
  • Method for preparing silicon nanowire array based on metal assisted chemical etching technique

Examples

Experimental program
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Example Embodiment

[0023] Example 1:

[0024] (1) Cleaning of silicon wafer: ultrasonically clean with acetone and absolute ethanol for 15-20 minutes, and then place the silicon wafer in H with a volume ratio of 1:1 2 SO 4 And H 2 O 2 Boil the mixed solution for 3~5min, then put them in the HF solution with the mass fraction of 3%~5% soak for 60~90s, and finally wash them with deionized water for 2~3 times, with N 2 Blow dry; after each of the above steps, you need to rinse with deionized water 2 to 3 times;

[0025] (2) The deposition of Ag particles: the concentration ratio is HF:AgNO in a dark environment 3 =4.0 mol / L:0.005 mol / L equal volume of mixed solution, then ultrasound the plastic beaker containing the mixed solution for 5 minutes, then put the silicon wafer obtained in step (1) in the mixed solution, let stand for 120s, and deposit Ag Particles

[0026] (3) Nanowire etching: put the silicon wafer obtained in step (2) into a volume ratio of 40%HF:30%H 2 O 2 =4:1 solution, etch for 10min at 2...

Example Embodiment

[0030] Example 2

[0031] (1) Cleaning of silicon wafer: ultrasonically clean with acetone and absolute ethanol for 15-20 minutes, and then place the silicon wafer in H with a volume ratio of 1:1 2 SO 4 And H 2 O 2 Boil the mixed solution for 3~5min, then put them in the HF solution with the mass fraction of 3%~5% soak for 60~90s, and finally wash them with deionized water for 2~3 times, with N 2 Blow dry; after each of the above steps, you need to rinse with deionized water 2 to 3 times;

[0032] (2) The deposition of Ag particles: the concentration ratio is HF:AgNO in a dark environment 3 =5.0 mol / L: 0.01 mol / L equal volume of mixed solution, then ultrasound the plastic beaker containing the mixed solution for 5 minutes, then put the silicon wafer obtained in step (1) in the mixed solution and let it stand for 90s to deposit Ag Particles

[0033] (3) Nanowire etching: put the silicon wafer obtained in step (2) into a volume ratio of 40%HF:30%H 2 O 2 =4:1 solution, etch 6min at 25℃;...

Example Embodiment

[0037] Example 3

[0038] (1) Cleaning of silicon wafer: ultrasonically clean with acetone and absolute ethanol for 15-20 minutes, and then place the silicon wafer in H with a volume ratio of 1:1 2 SO 4 And H 2 O 2 Boil the mixed solution for 3~5min, then put them in the HF solution with the mass fraction of 3%~5% soak for 60~90s, and finally wash them with deionized water for 2~3 times, with N 2 Blow dry; after each of the above steps, you need to rinse with deionized water 2 to 3 times;

[0039] (2) The deposition of Ag particles: the concentration ratio is HF:AgNO in a dark environment 3 =5.0 mol / L: 0.005 mol / L equal volume of mixed solution, then ultrasound the plastic beaker containing the mixed solution for 5 minutes, then put the silicon wafer obtained in step (1) in the mixed solution and let it stand for 110s to deposit Ag Particles

[0040] (3) Nanowire etching: put the silicon wafer obtained in step (2) into a volume ratio of 40%HF:30%H 2 O 2 =4:1 solution, etch for 2min a...

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Abstract

The present invention relates to a method for preparing a silicon nanowire array based on a metal-assisted chemical etching technique and belongs to the semiconductor nanomaterial preparation technical field. According to the method of the invention, a mixed solution of hydrofluoric acid (HF) and silver nitrate (AgNO3) with a certain parameter, is prepared, and the solution is subjected to ultrasonic mixing for 3 to 5 minutes; a cleaned silicon wafer is arranged in the mixed solution, so that Ag particles can be deposited; and the silicon wafer is arranged in a mixed solution of hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with a certain parameter, and therefore, a length-controllable silicon nanowire array is prepared through using the principle that the mixed solution, the Ag particles and the silicon wafer can form a primary battery. The method has the advantages of low cost, simple process and high production efficiency and the like. With the method adopted, a simple and convenient approach is provided for the preparation of silicon nanowire solar batteries.

Description

technical field [0001] The invention relates to a method for preparing semiconductor nanomaterials, in particular to a method for preparing silicon nanowire arrays based on metal-assisted chemical etching technology. Background technique [0002] Nanowire, also known as quantum wire, is a one-dimensional semiconductor material that is confined below 100nm in the lateral direction and has no restriction in the vertical direction. In nanowires, the movement of electrons (or holes) in the lateral direction is restricted, which will produce a series of quantum effects, such as surface effects, Coulomb blocking effects, quantum confinement effects, small size effects, and light trapping properties. The above effects are all beneficial to the design of nanowire solar cells. Among them, the surface effect and small size effect make the reflection coefficient of nanowires significantly decrease, which will significantly increase the absorption rate of the spectrum, resulting in exce...

Claims

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Application Information

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IPC IPC(8): H01L21/306H01L31/18B82Y40/00
CPCY02P70/50
Inventor 杨宇周志文王荣飞杨杰王茺
Owner YUNNAN UNIV
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