Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal oxide ordered self-assembly patterned preparation method and metal oxide film

A technology of oxide film and oxide, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of wasting raw materials, damaging metal oxide semiconductors, and polluting the environment with etching liquid, and achieves the effect of low consumables

Inactive Publication Date: 2018-01-30
SUN YAT SEN UNIV
View PDF5 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the patterning process of metal oxide semiconductors is mainly a subtractive process, such as photolithography and etching, but photolithography and etching patterning will damage metal oxide semiconductors and waste raw materials
Etching solution will also pollute the environment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal oxide ordered self-assembly patterned preparation method and metal oxide film
  • Metal oxide ordered self-assembly patterned preparation method and metal oxide film
  • Metal oxide ordered self-assembly patterned preparation method and metal oxide film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0028] Such as figure 1 As shown, it is a flow chart of a metal oxide ordered self-assembly patterned preparation method according to an embodiment of the present invention, and the method includes:

[0029] 101. Perform hydrophobic treatment on the surface of the hydrophilic substrate, or perform hydrophilic treatment on the surface of the hydrophobic substrate to form two hydrophilic and hydrophobic interfaces with different surface energies, and form micro-nano patterns of specific shapes between the two interfaces arrangement structure;

[0030] 102. Coating the metal oxide precursor on the formed substrate having the micro-nano pattern arrangement structure, spontaneously occur the self-assembly behavior of wetting and dewetting, and obtain a patterned ordered metal oxide film.

[0031] Preferably, the hydrophilic substrate comprises: glass, quartz, silicon dioxide, silicon or other hard or flexible substrates through hydrophilic treatment; the hydrophilic treatment meth...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
sizeaaaaaaaaaa
thermal resistanceaaaaaaaaaa
Login to View More

Abstract

The embodiment of the invention provides a metal oxide ordered self-assembly patterned preparation method and a metal oxide film. The method includes: performing a hydrophobic treatment on the surfaceof a hydrophilic substrate, or performing a hydrophilic treatment on the surface of a hydrophobic substrate to form a hydrophilic interface and a hydrophobic interface that have different surface energy, and forming a micro-nano pattern arrangement structure in a specific shape between the two kinds of interfaces; coating the formed substrate having the micro-nano patterned arrangement structurewith a metal oxide precursor in order to spontaneously generate wetting and de-wetting self-assembly behaviors and to obtain a patterned ordered metal oxide film. In another aspect, the embodiment ofthe present invention provides a metal oxide film prepared by the metal oxide ordered self-assembly patterned preparation method. The method has no damage and low consumption, achieves one-time patterning, and is also applicable to hard substrates (glass, silicon dioxide, silicon and the like) and flexible substrates (PET, PDMS, PI and the like).

Description

technical field [0001] The invention relates to the technical field of metal oxide semiconductors, in particular to a method for preparing a metal oxide ordered self-assembly pattern and a metal oxide thin film. Background technique [0002] Compared with silicon and organic semiconductor materials, metal oxide semiconductors have high electron mobility (over 10cm 2 / V·sec), high transparency, and good uniformity over a large area. Due to the considerable potential of metal oxide thin films, there are a wide range of applications in sensors, solar cells, non-volatile memory devices, and ultra-high-resolution flat panel displays. [0003] Traditional metal oxide semiconductors usually use vacuum-assisted technology, such as sputtering (PVD\PECVD) or pulsed laser ablation (PLA). However, since different metal materials in the target have different evaporation rates, the stoichiometric ratio of metal elements will change after the target is used many times, which will affect ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
Inventor 刘川李敏敏
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com