A kind of crystalline/amorphous silicon-carbon nanowire and its preparation method and application
A technology of amorphous silicon and carbon nanowires, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of reducing the specific capacity of composite materials, high raw material costs, difficulties, etc., and achieve high Effects of capacity and cycle stability, excellent cycle stability, and excellent rate performance
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Embodiment 1
[0033] Preparation of crystalline / amorphous silicon nanowires:
[0034] A 10kW thermal plasma device is used to prepare crystalline / amorphous silicon-carbon nanowires, mainly including a 10kW plasma generation system, a feeding system, a graphite inner sleeve-stainless steel outer double-layer controller, a gas distribution system, a product collection system and an exhaust gas discharge system, etc. . The raw silicon powder is commercially available micron silicon powder with a particle size of 5 μm. Introduce central gas (argon gas) into the plasma device, after the plasma arc is formed and run stably for 3 minutes, add silicon powder through the feeder, the feed rate is 5g / min, the carrier gas is argon, and the carrier gas rate is 0.5 m 3 / h. After stopping the feeding, the arc was extinguished, and the crystalline / amorphous silicon nanowires were collected, with a diameter of 30-50 nm and a length of 500 nm.
[0035] Preparation of crystalline / amorphous silicon-carbon ...
Embodiment 2
[0052] Preparation of crystalline / amorphous silicon nanowires:
[0053] A 10kW thermal plasma device is used to prepare crystalline / amorphous silicon-carbon nanowires, mainly including a 10kW plasma generation system, a feeding system, a graphite inner sleeve-stainless steel outer double-layer controller, a gas distribution system, a product collection system and an exhaust gas discharge system, etc. . The raw silicon powder is commercially available micron silicon powder with a particle size of 10 μm. Introduce the central gas (argon) into the plasma device. After the plasma arc is formed and run stably for 3 minutes, add silicon powder through the feeder, the feed rate is 10g / min, the carrier gas is argon, and the carrier gas rate is 1.0 m 3 / h. After stopping the feeding, the arc was extinguished, and the crystalline / amorphous silicon nanowires were collected to obtain crystalline / amorphous silicon nanowires with a diameter of 10-30 nm and a length of 300 nm.
[0054] P...
Embodiment 3
[0059] Preparation of crystalline / amorphous silicon nanowires:
[0060] A 10kW thermal plasma device is used to prepare crystalline / amorphous silicon-carbon nanowires, mainly including a 10kW plasma generation system, a feeding system, a graphite inner sleeve-stainless steel outer double-layer controller, a gas distribution system, a product collection system and an exhaust gas discharge system, etc. . The raw silicon powder is commercially available micron silicon powder with a particle size of 30 μm. Introduce the central gas (argon) into the plasma device. After the plasma arc is formed and run stably for 3 minutes, add silicon powder through the feeder, the feed rate is 6g / min, the carrier gas is argon, and the carrier gas rate is 0.8 m 3 / h. After stopping the feeding, the arc was extinguished, and the crystalline / amorphous silicon nanowires were collected, with a diameter of 50-70 nm and a length of 200 nm.
[0061] Preparation of crystalline / amorphous silicon-carbon...
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