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Phosphorus spin-coating method of P-type crystalline silicon solar cell

A solar cell, crystalline silicon technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as uniform coating of phosphorus, and achieve the effects of good uniformity, reduced manufacturing costs, and improved utilization.

Inactive Publication Date: 2018-03-13
RENESOLA JIANGSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no good technology to make phosphorus front-emitter P-type silicon solar cells by using silicon wafers spin-coated with phosphorus as a diffusion source. How to uniformly coat phosphorus on the surface of silicon wafers is a major problem in current technology

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A method for spin-coating phosphorus in a P-type crystalline silicon solar cell provided in this embodiment includes the following steps:

[0025] S1. Spray a layer of pre-wetting liquid on the surface of the P-type crystal silicon wafer after texturing to make the surface of the P-type crystal silicon wafer wet. The pre-wetting liquid is hydrogen peroxide. The amount of pre-wetting liquid required for each P-type crystal silicon wafer 0.6-3.5ml;

[0026] S2. Use KW-4A-CE anti-electromagnetic interference homogenizer to drop liquid phosphorus source on the surface of P-type crystal silicon wafer for spin coating. The amount of phosphorus source required for each P-type crystal silicon wafer is 0.3ml, and the homogenization time 10s, the rotating speed is 1000r / min, the spin coating speed is 2000r / min, and the spin coating time is 5s;

[0027] S3, drying the spin-coated P-type crystalline silicon wafer, the drying temperature is 300° C., and the drying time is 15 minute...

Embodiment 2

[0030] A method for spin-coating phosphorus in a P-type crystalline silicon solar cell provided in this embodiment includes the following steps:

[0031] S1. Spray a layer of pre-wetting liquid on the surface of the P-type crystal silicon wafer after texturing to make the surface of the P-type crystal silicon wafer wet. The pre-wetting liquid is hydrogen peroxide. The amount of pre-wetting liquid required for each P-type crystal silicon wafer 0.6-3.5ml;

[0032] S2. Use the KW-4A-CE anti-electromagnetic interference homogenizer to drop a liquid phosphorus source on the surface of the P-type crystalline silicon wafer for spin coating. The amount of phosphorus source required for each P-type crystalline silicon wafer is 0.6ml, and the homogenization time 12s, the rotating speed is 1200r / min, the spin coating speed is 3000r / min, and the spin coating time is 10s;

[0033] S3, drying the spin-coated P-type crystalline silicon wafer, the drying temperature is 320° C., and the dryin...

Embodiment 3

[0036] A method for spin-coating phosphorus in a P-type crystalline silicon solar cell provided in this embodiment includes the following steps:

[0037] S1. Spray a layer of pre-wetting liquid on the surface of the P-type crystal silicon wafer after texturing to make the surface of the P-type crystal silicon wafer wet. The pre-wetting liquid is hydrogen peroxide. The amount of pre-wetting liquid required for each P-type crystal silicon wafer 0.6-3.5ml;

[0038] S2. Use KW-4A-CE anti-electromagnetic interference homogenizer to drop liquid phosphorus source on the surface of P-type crystal silicon wafer for spin coating. The amount of phosphorus source required for each P-type crystal silicon wafer is 0.9ml, and the homogenization time 14s, the rotating speed is 1400r / min, the spin coating speed is 3500r / min, and the spin coating time is 15s;

[0039] S3, drying the spin-coated P-type crystalline silicon wafer, the drying temperature is 340° C., and the drying time is 19 minut...

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Abstract

The invention discloses a phosphorus spin-coating method of a P-type crystalline silicon solar cell, and relates to the technical field of solar cell production and manufacturing. The phosphorus spin-coating method comprises the steps of spraying a layer of pre-wetting liquid on a surface of textured P-type crystalline silicon wafer so that the surface of the P-type crystalline silicon wafer is immersed; dropwise adding a liquid-state phosphorus source to the surface of the immersed P-type crystalline silicon wafer for spin-coating, wherein the spin-coating rotational speed is (2,000-4,000)r / min, and the spin-coating time is 5-20 seconds; baking the spin-coated P-typed crystalline silicon wafer, wherein the baking temperature is 300-350 DEG C, and the baking time is 15-20 minutes; and performing thermal diffusion on the baked P-type crystalline silicon wafer to form a PN junction. By a spin-coating phosphorus diffusion method, the liquid-state phosphorus source is more uniformly arranged on the surface of the textured P-type crystalline wafer, a more perfect single-side diffusion technology is obtained, no phosphorus source is diffused to a back surface, and the internal uniformityof the P-type crystalline wafer after diffusion is improved.

Description

technical field [0001] The invention relates to the technical field of solar cell production and manufacturing, in particular to a phosphorus spin-coating method for a P-type crystalline silicon solar cell. Background technique [0002] Energy plays a vital role in promoting the world economy and the development of all mankind. The use of safe, clean, widely distributed and endless solar energy is an important method to ensure the survival and sustainable development of human beings. From the perspective of technical research, for example, the phosphorus-diffused PERT type double-sided battery has the characteristics of low surface compliance rate on the back and high doping concentration back field, and the efficiency can be higher than that of ordinary structure batteries. Double-sided batteries involve many key technologies for high-efficiency batteries in the future, such as spin-coated phosphorus diffusion instead of aluminum back field technology and phosphorus diffusi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/225H01L31/18
CPCH01L21/02381H01L21/02628H01L21/02694H01L21/2252H01L31/1804H01L31/1864Y02E10/547Y02P70/50
Inventor 赫汉何晨旭褚玉壮吴泓朱波兴
Owner RENESOLA JIANGSU LTD
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