Three-crystal overcurrent protection type A circuit voltage regulating chip in unloading low-overvoltage zone

A technology of overvoltage area and load dumping, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of high cost of electronic modules, impact on driving safety, failure or breakdown, and achieve simple structure and low cost , high pressure effect

Inactive Publication Date: 2018-03-16
佛山中锦微电科技有限公司
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This poses a greater threat to electronic modules such as generator stator windings, rectifier bridges, voltage regulation chips, electrical equipment, especially computer boards, and instrument panels. It is best to install overvoltage absorbing (peak chopping) components inside each module, such as setting TVS, etc., but in actual vehicle operation, many electronic modules are still broken down by overvoltage, and many electronic modules are expensive and bring If the vehicle fails or breaks down during operation, driving safety is affected. One of the root causes is to optimize the excitation of the generator to reduce the probability of failure at the source.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-crystal overcurrent protection type A circuit voltage regulating chip in unloading low-overvoltage zone
  • Three-crystal overcurrent protection type A circuit voltage regulating chip in unloading low-overvoltage zone
  • Three-crystal overcurrent protection type A circuit voltage regulating chip in unloading low-overvoltage zone

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as figure 1 As shown, it is the first three-crystal overcurrent protection type A circuit voltage regulator chip in the load dump low overvoltage region. Its structural features include:

[0033] First transistor 1 (Q1), second transistor 2 (Q2), third transistor 3 (Q3), energy storage delay unit 5, threshold adjustment unit 4, resistor R1, sampling unit 7, reference unit 8 and freewheeling unit 9, of which:

[0034] The emitter of the first transistor Q1 is grounded, the collector of the first transistor is connected to the positive pole B+ of the power supply through the resistor R1, and the collector of the first transistor is also connected to the input terminal (gate) of the third transistor Q3 and the input of the energy storage delay unit 5 terminal, the ground terminal (source) of the third transistor Q3 is grounded (that is, E, the same below), the output terminal (drain) of the third transistor Q3 is connected to the collector of the second transistor Q2...

Embodiment 2

[0045] On the basis of the above-mentioned embodiment 1, the embodiment of the present invention also provides a three-crystal overcurrent protection type A circuit voltage regulation chip in the load dump low overvoltage region, such as figure 2 As shown, the circuit in the above figure 1 The collector loop of the second transistor Q2 in the circuit shown is connected to the diode 6 (D6) and the resistor R6, the anode of the diode D6 is connected to the collector of the second transistor Q2 and one end of the resistor R6 at the same time, and the cathode of the diode D6 is connected to the output of the third transistor Q3 terminal (drain), and the other terminal of the resistor R6 is connected to the output terminal of the third transistor Q3. Its working process is the same as the above figure 1 The circuit shown is basically the same, only when the power tube Q3 is normally turned on, the collector potential of the triode Q2 is pulled down through the diode D6. At this t...

Embodiment 3

[0047] Also on the basis of the above-mentioned embodiment 1, the embodiment of the present invention also provides a three-crystal overcurrent protection type A circuit voltage regulation chip in the load dump low overvoltage region, such as image 3 As shown, the circuit in the above figure 1 In the circuit shown, the collector circuit of the second transistor Q2 is connected in series with a diode D6, and a resistor R6 is also added. The anode of the diode D6 is connected to the collector of the second transistor Q2 and one end of the resistor R6 at the same time, and the cathode of the diode D6 is connected to the third transistor Q3 The output terminal (drain), the other end of the resistor R6 is connected to the positive pole of the power supply. Its working process is also the same as the above figure 1 The circuit shown is basically the same, only when the power tube Q3 is normally turned on, the collector potential of the triode Q2 is pulled down through the diode D6...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A three-crystal overcurrent protection type A circuit voltage regulator chip in the load dump low overvoltage region, including: the emitter of the first transistor Q1 is grounded, the collector of Q1 is connected to the positive pole B+ of the power supply through the resistor R1, and the collector is also connected to the third transistor The gate of Q3 is connected to the input terminal of the energy storage delay unit 5; the source of the transistor Q3 is grounded E, and its drain is connected to the collector of the second transistor Q2, and the base of the transistor Q2 is connected to the output terminal of the energy storage delay unit 5, and the energy storage delay unit The ground terminal of 5 is grounded, the emitter of transistor Q2 is connected to the base of transistor Q1 through the threshold adjustment unit 4, and the drain of transistor Q3 is the excitation terminal F; the sampling unit 7 is connected to the positive pole of the power supply and the ground, and its output terminal is connected to transistor Q1 through the reference unit 8 The freewheeling unit 9 is connected between the excitation terminal and B+; it has simple chip circuit, high withstand voltage, overcurrent protection function, good temperature resistance, low load dump overvoltage zone, low cost, and wide application range , The advantages of high reliability.

Description

technical field [0001] The invention belongs to the technical field of automobile generator control, and relates to a three-crystal overcurrent protection type A circuit voltage regulation chip in a load dump low overvoltage region. Background technique [0002] Automobile generators work in special working environment conditions with wide temperature range, long baking time at high temperature, large vibration, large electromagnetic interference, and large voltage fluctuation. [0003] Among them, the vast majority of current automobile generators are built-in voltage regulator structures, requiring generator voltage regulators to adapt to the above-mentioned relatively harsh working environment, and it is difficult for general electronic components and circuits to operate in such a large temperature range. , Long-term stable work in the environment of high temperature for a long time. Practice has shown that many electronic chips of voltage regulators have vicious failure...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
CPCG05F1/56
Inventor 杨明
Owner 佛山中锦微电科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products