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A Thin Film Doping Modification Method Based on Plasma Enhanced Atomic Layer Deposition

An atomic layer deposition and plasma technology, applied in the field of thin film doping, can solve the problems of unsatisfactory quality, poor optical and mechanical properties of thin films, etc., and achieve strong applicability, convenient operation and high quality

Active Publication Date: 2019-11-22
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although the atomic layer deposition aluminum oxide film has the above advantages, when it is applied to the packaging process, the lower deposition temperature will easily deteriorate the optical and mechanical properties of the film, resulting in the failure to obtain satisfactory quality

Method used

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  • A Thin Film Doping Modification Method Based on Plasma Enhanced Atomic Layer Deposition
  • A Thin Film Doping Modification Method Based on Plasma Enhanced Atomic Layer Deposition
  • A Thin Film Doping Modification Method Based on Plasma Enhanced Atomic Layer Deposition

Examples

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Effect test

Embodiment 1

[0045] Using plasma-enhanced atomic layer deposition technology, 20 cycles of nitrogen-doped aluminum oxide were grown on the surface of the silicon wafer substrate. The method includes the following processes:

[0046] First, use high-pressure nitrogen to purge the substrate silicon wafer to be deposited, put the silicon wafer into the cavity of the plasma-enhanced atomic layer deposition reactor, cover the cavity, turn on the switch of the vacuum pump for vacuuming, and set the pressure at the outlet of the cavity 1 Pa;

[0047] One or more of high-purity nitrogen or high-purity ammonia is loaded at the gas inlet of the plasma equipment, and the plasma generation equipment is turned on when the deposition starts; the chamber is heated, and the temperature of the reaction chamber is set to 60°C. During the process, the inert gas argon is continuously fed into the cavity at 50 standard milliliters per minute as a cleaning gas to clean the cavity; the cavity outlet pressure is ...

Embodiment 2

[0054] A 20-period nitrogen-doped aluminum oxide was grown on the surface of a silicon wafer substrate by plasma-enhanced atomic layer deposition, and the method included the following processes:

[0055] Use high-pressure nitrogen to purge the substrate silicon wafer to be deposited, put the silicon wafer into the chamber of the plasma-enhanced atomic layer deposition reactor, cover the chamber, turn on the switch of the vacuum pump to vacuumize, and the outlet pressure of the chamber is 2Pa;

[0056] One or more of high-purity nitrogen or high-purity ammonia is loaded at the gas inlet of the plasma equipment, and the plasma generation equipment is turned on when the deposition starts; the chamber is heated, and the temperature of the reaction chamber is set to 100°C. During the process, the inert gas argon is continuously fed into the cavity at 50 standard milliliters per minute as a cleaning gas to clean the cavity; the cavity outlet pressure is 40Pa;

[0057] When the temp...

Embodiment 3

[0063] Using plasma-enhanced atomic layer deposition technology to grow 140 cycles of nitrogen-doped aluminum oxide on the surface of the silicon wafer substrate, the method includes the following processes:

[0064] Use high-pressure nitrogen to purge the substrate silicon wafer to be deposited, put the silicon wafer into the cavity of the plasma-enhanced atomic layer deposition reactor, cover the cavity, turn on the switch of the vacuum pump to vacuumize, and the outlet pressure of the cavity is 0.5Pa;

[0065] One or more of high-purity nitrogen or high-purity ammonia is loaded at the gas inlet of the plasma equipment, and the plasma generation equipment is turned on when the deposition starts; the chamber is heated, and the temperature of the reaction chamber is set to 25°C. During the process, the inert gas argon is continuously fed into the cavity at 50 standard milliliters per minute as a cleaning gas to clean the cavity; the cavity outlet pressure is 20Pa;

[0066] Whe...

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Abstract

The invention belongs to the technical field relevant to thin film doping and discloses a thin film doping modification method based on plasma-enhanced atomic layer deposition. The thin film doping modification method is used for depositing a plurality of layers of nitrogen-doped aluminum oxide thin films on the surface of a target substrate and comprises the following steps that the substrate issubjected to pretreatment such as cleaning and vacuum pumping; heating is conducted till the preset temperature reaches, and cleaning treatment is executed; and under the condition of continuous loading of nitrogen-containing gas, various precursors are led to execute a deposition reaction of the nitrogen-doped aluminum oxide thin films for multiple times till the needed thickness reaches. Throughthe thin film doping modification method, under the doping environment and technological conditions which are simpler, more practicable and convenient to control, the overall doping modification process of the aluminum oxide thin films can be executed in efficient and high-quality modes, and thus, the thin film doping modification method is particularly suitable for occasions such as thin film packaging application.

Description

technical field [0001] The invention belongs to the technical field related to thin film doping, and more specifically relates to a thin film doping modification method based on plasma-enhanced atomic layer deposition. Background technique [0002] ALD aluminum oxide film has excellent physical and chemical properties, high dielectric coefficient, high thermal conductivity, strong radiation resistance, resistance to water and oxygen penetration, and high transmittance in the visible light band, so it is widely used in solar cells Passivation, microelectronic devices, light-emitting diodes, organic light-emitting diodes, etc., have also attracted extensive attention in the field of packaging. [0003] Although atomic layer deposition aluminum oxide film has the above advantages, when it is applied to the packaging process, the lower deposition temperature will easily deteriorate the optical and mechanical properties of the film, resulting in the failure to obtain satisfactory...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40C23C16/455C23C16/50
CPCC23C16/403C23C16/45536
Inventor 陈蓉刘媛媛单斌曹坤李云杨惠之
Owner HUAZHONG UNIV OF SCI & TECH
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