Forming method adopting infiltration method to make reactive sintering silicon carbide ceramic and die

Abstract

The invention belongs to the technical field of materialogy, and particularly relates to a forming method adopting an infiltration method to make reactive sintering silicon carbide ceramic and a die.The forming method includes following steps: 1), filling a mixture formed by uniform mixing into the die with a resin diffusion passage, and continuously vibrating the die in the process of filling the mixture, wherein the mixture comprises silicon carbide powder and a carbon material; 2), filling the die with the mixture, compacting, and then sealing the die, wherein compacting refers to compacting or pressurizing for compacting; 3), injecting resin serving as a binder into the die to enable the resin to infiltrate into gaps inside the mixture; 4), heating to enable the resin in the die to becured to obtain a silicon carbide ceramic blank; 5), putting the silicon carbide ceramic blank into a sintering furnace for reactive sintering to obtain the silicon carbide ceramic. The infiltrationmethod is adopted to make the reactive sintering silicon carbide ceramic, so that limitation caused by particle size of the silicon carbide powder is avoided, and requirements on using quality of various silicon carbide products can be met.

Description

technical field [0001] The invention belongs to the technical field of materials science, and in particular relates to a molding method and a mold for making reaction-sintered silicon carbide ceramics by adopting an infiltration method. Background technique [0002] Silicon carbide ceramic materials have excellent properties such as high temperature strength, high temperature oxidation resistance, good wear resistance, good thermal stability, small thermal expansion coefficient, high thermal conductivity, high hardness and chemical corrosion resistance. Protection, space technology, information electronics, energy and other fields have increasingly wide applications. [0003] At present, there are many silicon carbide ceramic blank forming processes and sintering process technologies. Although the silicon carbide ceramics produced by most of the process technologies have excellent performance, they are different due to the complex manufacturing process of the products, stric...

AI Technical Summary

Problems solved by technology

Carrying out the two at the same time is likely to cause defects in the silicon carbide body, and the removal of organic matter is also likely to cause further defects

In addition, due to air bubbles, pouring molding is also prone to produce pores in the green body, which reduces the yield and quality

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