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Electrocoppering method

A technology of electroplating copper and electroplating solution, which is applied to circuits, semiconductor devices, etc., can solve the problems of bump electromigration performance degradation, reliability degradation, and rough interface between electroplating layers, so as to shorten the electroplating process time and chemical mechanical polishing process time, reduced copper film thickness, and the effects of high fill rates

Inactive Publication Date: 2018-03-30
王衍春
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The interface between the electroplating layers formed by the existing process is rough, and there are voids formed in it, which reduces the electromigration performance of the bump, thereby reducing its reliability

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] A kind of copper electroplating method of the present invention, comprises the following steps:

[0017] The first step, before the chemical plating process of the chip, the wafer groove is ultrasonically oscillated or washed with deionized water to fill it with deionized water. Fill the wafer trench with deionized water;

[0018] Second step, prepare electroplating solution, described electroplating solution comprises: copper sulfate is 50 / liter, and sulfuric acid is 50 grams / liter, and chloride ion is 10 mg / liter, and suppressor is 5 mg / liter, and accelerator is 5 milligrams / liter, the leveling agent is 0.5 mg / liter, and the rest is deionized water;

[0019] The third step, the initial condition electroplating process parameters are: time: 10 seconds, current density: 0.8 ampere / dm2, silicon wafer rotation speed: 5 rpm, electroplating solution flow rate: 4 liters / min, silicon wafer process position: 5 mm.

[0020] The fourth step, the electroplating process par...

Embodiment 2

[0024] A method for electroplating copper, comprising the steps of:

[0025] The first step, before the chemical plating process of the chip, the wafer groove is ultrasonically oscillated or washed with deionized water to fill it with deionized water. Fill the wafer trench with deionized water;

[0026] Second step, prepare electroplating solution, described electroplating solution comprises: copper sulfate is 150 grams / liter, and sulfuric acid is 150 grams / liter, and chloride ion is 100 mg / liter, and suppressor is 80 mg / liter, and accelerator is 30 mg / L, the leveling agent is 8 mg / L, and the rest is deionized water;

[0027] The third step, the initial condition electroplating process parameters are: time: 25 seconds, current density: 1 ampere / square decimeter, silicon wafer rotation speed: 10 rpm, electroplating solution flow rate: 5 liters / min, silicon wafer process position: 8mm.

[0028] The fourth step, the electroplating process parameters in the transition stage are...

Embodiment 3

[0032] A method for electroplating copper, comprising the steps of:

[0033] The first step, before the chemical plating process of the chip, the wafer groove is ultrasonically oscillated or washed with deionized water to fill it with deionized water. Fill the wafer trench with deionized water;

[0034] Second step, prepare electroplating solution, described electroplating solution comprises: copper sulfate is 200 grams / liter, and sulfuric acid is 220 grams / liter, and chloride ion is 150 mg / liter, and suppressor is 200 mg / liter, and accelerator is 50 mg / L, the leveling agent is 20 mg / L, and the rest is deionized water;

[0035] The third step, the initial condition electroplating process parameters are: time: 50 seconds, current density: 3 amps / dm2, silicon wafer rotation speed: 30 rpm, electroplating solution flow rate: 10 liters / min, silicon wafer process position: 10 mm.

[0036] The fourth step, the electroplating process parameters in the transition stage are: time: 10...

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PUM

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Abstract

The invention discloses a copper electroplating method, which comprises the following steps: the first step, before the chemical electroplating process of the chip, the wafer groove is ultrasonically oscillated or flushed with deionized water to fill it with deionized water; the second step, Prepare the electroplating solution, the third step, the initial condition electroplating, the transition stage electroplating, and the final stage electroplating, set different parameters respectively. The present invention is used to form copper plating film on integrated circuit graphics with large size and depth, and conducts electroplating process step by step under different current density, silicon chip rotation speed, electroplating solution flow rate and silicon chip process position conditions, reducing the cost of electroplating process The required copper film thickness is shortened, thereby shortening the electroplating process time and chemical mechanical polishing process time, and saving the use of chemical consumables.

Description

technical field [0001] The invention relates to a copper electroplating method, which belongs to the technical field of semiconductor integrated circuit technology. Background technique [0002] When forming a semiconductor chip, integrated circuit devices such as transistors are first formed on the surface of a semiconductor substrate in the semiconductor chip. An interconnection structure is then formed on the integrated circuit device. Bumps are formed on the surface of the semiconductor chip as contacts of integrated circuit devices. [0003] In a specific process for forming bumps, the UBM is formed first, and then the bumps are formed on the UBM. The formation of the UBM may include forming a copper seed layer, and forming a patterned mask on the copper seed layer, and a part of the copper seed layer is exposed through openings of the mask. An electroplating step is then performed on the exposed portion of the copper seed layer to electroplate a thick copper layer. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/38C25D7/12
CPCC25D3/38C25D7/12
Inventor 王衍春
Owner 王衍春
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