ITO substrate and OLED (Organic Light-Emitting Diode) display

A display and substrate technology, applied in the direction of electric solid-state devices, semiconductor devices, organic semiconductor devices, etc., can solve the problems of limited application, low efficiency of red OLED products, wide light-emitting spectrum, etc., and achieve multiple performance improvements and significant competitive advantages , the effect of improving efficiency

Inactive Publication Date: 2018-04-13
TRULY SEMICON
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, blue light OLED products are limited by blue light organic materials, so that the life of blue light OLEDs is low, while red light organic materials have low luminous efficiency, which makes red light OLED products very low efficiency. In addition, the organic light emitting materials used in OLEDs have a wide light emission spectrum , which is not conducive to the formation of saturated colors. In addition, due to the internal total reflection of the OLED and the optical waveguide effect of the high refractive index layer, only a small part of the internal light is taken out for use, resulting in a very low light extraction efficiency of the current OLED display, which limits its use. application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] An ITO substrate includes a substrate, a photonic crystal, a first protection layer, a quantum dot layer, a second protection layer and an ITO layer deposited on the substrate in sequence.

[0036] The substrate is glass; photonic crystals in a rectangular array are formed on the substrate by an electron beam printing method. The material of the photonic crystal is Si 3 N 4 and GaN with a thickness of 450nm.

[0037] The first protection layer is formed on the photonic crystal by physical vapor deposition, and the material of the first protection layer fills the gap formed by the photonic crystal. The thickness of the first protective layer is 270nm, and the material of the first protective layer is Al 3 N 4 .

[0038] The second protective layer is formed on the quantum dot layer using physical vapor deposition, and the material of the second protective layer is Al 3 N 4 . The thickness of the second protective layer is preferably 40 nm.

[0039] The thickness o...

Embodiment 2

[0042] An ITO substrate includes a substrate, a photonic crystal, a first protection layer, a quantum dot layer, a second protection layer and an ITO layer deposited on the substrate in sequence.

[0043] The substrate is polyethylene terephthalate.

[0044] A rectangular array of photonic crystals is formed on the substrate by laser holography. The material of the photonic crystal is InP, and the thickness is 300nm.

[0045] The first protective layer is prepared and formed on the photonic crystal by chemical vapor deposition, and the material of the first protective layer fills the gap formed by the photonic crystal. The thickness of the first protective layer is 180nm, and the material of the first protective layer is Al 2 o 3 .

[0046] The second protective layer is prepared and formed on the quantum dot layer using a chemical vapor deposition method, and the material of the second protective layer is Al 2 o 3 . The thickness of the second protective layer is prefe...

Embodiment 3

[0050] An ITO substrate includes a substrate, a photonic crystal, a first protection layer, a quantum dot layer, a second protection layer and an ITO layer deposited on the substrate in sequence.

[0051] The substrate is polyvinyl alcohol.

[0052] A rectangular array of photonic crystals is formed on the substrate by laser holography. The photonic crystal is made of InGaN with a thickness of 600nm.

[0053] The first protective layer is prepared and formed on the photonic crystal by using a physical vapor deposition method, and the material of the first protective layer fills the gap formed by the photonic crystal. The thickness of the first protective layer is 350nm, and the material of the first protective layer is Si 3 o 4 .

[0054] The second protective layer is prepared and formed on the quantum dot layer using a physical vapor deposition method, and the material of the second protective layer is Si 3 o 4 . The thickness of the second protective layer is prefera...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an ITO substrate and an OLED (Organic Light-Emitting Diode) display. The ITO substrate comprises a substrate as well as a photonic crystal, a first protective layer, a quantumdot layer, a second protective layer and an ITO layer which are sequentially deposited on the substrate. According to the ITO substrate provided by the present invention, the photonic crystal and thequantum dot layer are added between the substrate and the ITO, and therefore, after the ITO substrate is adopted to form a device such as an OLED product, the photonic crystal can increase the light extraction efficiency of the OLED product by 30 to 80%. By means of the photoluminescence characteristic of quantum dots, red light emitted by an organic light-emitting layer is converted to blue light, so that a blue light OLED can be formed; blue light emitted from the organic light-emitting layer is converted into red light or green light, a red light OLED or a green light OLED can be formed; the service life of the blue light OLED can be prolonged; the efficiency of the red light OLED can be improved; and the light emitted by the quantum dot layer has a narrower spectrum, which makes the colors of various single-color OLEDs more saturated. The light extraction efficiency, color saturation and other properties of the OLED display are significantly improved, and therefore, the OLED display has a significant competitive advantage.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an ITO substrate and an OLED display. Background technique [0002] OLED (Organic Light-Emitting Diode, organic light-emitting diode) display, also known as organic electroluminescence display, is a new flat panel display device, because of its simple preparation process, low cost, low power consumption, high luminous brightness, Wide range of working temperature, light and thin volume, fast response speed, easy to realize color display and large-screen display, easy to realize matching with integrated circuit driver, easy to realize flexible display, etc., so it has broad application prospects. [0003] At present, blue light OLED products are limited by blue light organic materials, so that the life of blue light OLEDs is low, while red light organic materials have low luminous efficiency, which makes red light OLED products very low efficiency. In addition, the organic light ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52
CPCH10K77/10H10K50/85H10K2102/331Y02E10/549
Inventor 肖阳阮小龙陈友满王学军周波
Owner TRULY SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products