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Quantum dot-coupled microstructure with prognosis preparation of quantum dot and preparation method thereof

A microstructure and quantum dot technology, applied in the field of quantum dots, can solve the problems of difficult quantum dot preparation, limited size control, high cost, etc., and achieve the effect of low cost, high repeatability and simple process

Active Publication Date: 2018-04-17
PEKING UNIV
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Problems solved by technology

However, this method has bottlenecks such as limited size control (limited by the limit of micro-processing), high cost, and complicated process.
The above technical difficulties make it difficult to realize the preparation of multi-dimensional controllable quantum dots such as site, size and composition

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  • Quantum dot-coupled microstructure with prognosis preparation of quantum dot and preparation method thereof

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Embodiment Construction

[0037] The present invention will be further elaborated below through specific embodiments in conjunction with the accompanying drawings.

[0038] In this embodiment, the substrate adopts (0001) plane Al 2 o 3 , the epitaxial substrate is made of AlN, the quantum well structure is made of single quantum well, the bottom barrier is made of AlN, the quantum well is made of GaN, the thickness of the quantum well is 1nm (4 atomic layers), the top barrier is made of AlN, and the repair layer is made of AlN. The graphics of the microstructure adopt cylindrical array graphics.

[0039] In this embodiment, the quantum well structure is grown by molecular beam epitaxy MBE technology; the growth process is carried out in an ultra-high vacuum chamber, the high-purity (7N) metal source is produced by a K-Cell source furnace, and the nitrogen source is a radio frequency plasma nitrogen source . In MBE, the decomposition temperature of GaN is 800°C, and that of AlN is 1300°C (>800°C). Th...

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Abstract

The invention discloses a quantum dot-coupled microstructure with prognosis preparation of a quantum dot and a preparation method thereof. The longitudinal dimension of the quantum dot is controlled based on the thickness of a quantum well; components of the quantum dot are controlled by components of the quantum well and the uniformity is higher than that of the quantum dot structure in self-assembled growth. The lateral dimension of the quantum dot is selected by the selective thermal evaporation, so that the limit of epitaxial growth is broken; and the lateral dimension is far lower than that of the quantum dot structure in self-assembled growth. The position of the quantum dot in the microstructure is controlled by the micro-nano processing technology, so that the position and height of the quantum dot in the microstructure are controllable. According to the invention, the prognosis-reparation of the quantum dot is processed by the selective thermal evaporation; the process is simple, the cost is low, and the extensibility and repeatability are high; batched preparation is realized; and the practical process of the quantum-dot coupling microstructure is promoted.

Description

technical field [0001] The invention relates to quantum dots, in particular to a quantum dot coupling microstructure for pre-preparing quantum dots and a preparation method thereof. Background technique [0002] In 1983, Professor Brus of Bell Labs first proposed the concept of colloidal quantum dots; in 1993, Professor Bawendi's research group at the Massachusetts Institute of Technology synthesized quantum dots of uniform size for the first time; in 1996, Hines and others at the University of Chicago successfully synthesized ZnS / CdSe core-shell quantum dot structure. Semiconductor quantum dots known as "atom-like" have unique properties and have attracted much attention in recent years. Their research and application fields involve multiple disciplines such as physics, chemistry, biology and materials, and have become a key material for interdisciplinary research. . The small size effect of quantum dots will cause quantum confinement effect, macroscopic tunneling effect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02B81C1/00
CPCB81C1/0046B81C1/00531B81C1/00841H01L21/02538H01L21/02551H01L21/0259H01L21/02664
Inventor 王新强王平沈波孙萧萧王涛陈兆营盛博文王钇心荣新李沫张健
Owner PEKING UNIV
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