A kind of single crystal thin film of organic-inorganic composite perovskite material and its preparation method and application
A technology of perovskite materials and inorganic composites, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc. Reduce the performance of optoelectronic devices and other problems, and achieve the effects of simple preparation steps, low cost, and fewer crystal defects
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[0044] As mentioned above, the present invention provides a method for preparing an organic-inorganic composite perovskite material single crystal thin film, the preparation method comprising the following steps:
[0045] (1) Prepare the precursor solution of the organic-inorganic composite perovskite material, and treat the substrate to be used for growing single crystal thin film;
[0046] (2) combining the substrate obtained in step (1) into a two-dimensional confinement structure, and contacting the precursor solution of the perovskite material to form a thin film of the precursor solution by capillary action;
[0047] (3) Under certain conditions, the precursor grows into a single crystal in situ to obtain a single crystal thin film of the organic-inorganic composite perovskite material.
[0048] In a preferred embodiment, the preparation method further includes the following steps:
[0049] (4) removing the precursor solvent in the single crystal thin film of the organi...
Embodiment 1
[0057] Preparation of Perovskite Single Crystal Thin Films
[0058] (1) Select PbBr 2 and CH 3 NH 3 Br is the precursor raw material for perovskite materials, which is dissolved in N,N-dimethylformamide (DMF) at a molar ratio of 1:1 to prepare a 0.7mol / L precursor solution; the selected The monocrystalline silicon wafer substrate was ultrasonicated in deionized water, absolute ethanol, and acetone for 15 minutes, and then UV-O 3 Treat for 20min.
[0059] (2) Combine two single-crystal silicon wafer substrates under a pressure greater than 1kPa, and then immerse one end of the single-crystal silicon wafer into the perovskite precursor solution prepared above.
[0060] (3) At 100° C., place the base solution system containing the precursor solution film on a hot stage and heat for 48 hours to perform in-situ growth to obtain the organic-inorganic composite perovskite material single crystal film.
[0061] (4) The substrate and the film were transferred to a vacuum oven, and...
Embodiment 2
[0069] The preparation method is the same as in Example 1, the difference is only that: in step (1), use PbI 2 and CH 3 NH 3 I is the precursor raw material of the perovskite material, and a 1.2mol / L solution is prepared with γ-butyrolactone (GBL) as the precursor solvent.
[0070] The organic-inorganic composite perovskite CH prepared in Example 2 3 NH 3 PB 3 single crystal thin films of the material.
[0071] Figure 5 .a is the organic-inorganic composite perovskite CH prepared in Example 2 3 NH 3 PB 3 Scanning Electron Microscopy (SEM) of a single crystal thin film of the material. It can be seen from the figure that the perovskite single crystal film obtained by the process has high crystal quality, the surface is smooth and flat without defects, the side is very sharp, the degree of crystallization is high, the area is large, and the diameter and length of the film area can reach 500 μm. This defect-free single crystal film will greatly reduce the trap state de...
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