Simple and reliable low-cost silicon carbide power switch device driving circuit

Abstract

The invention discloses a simple and reliable low-cost silicon carbide power switch device driving circuit. The driving circuit comprises a full-bridge push-pull circuit, an isolation driving transformer, a gate positive voltage driving circuit and a gate negative voltage driving circuit; the full-bridge push-pull circuit consists of two N type metal oxide semiconductor field effect transistor (MOSFETs) and two P type MOSFETs, the centers of front and rear bridge arms of the full-bridge push-pull circuit are connected to primary windings of the isolation drive transformer via a parallel RC circuit; two secondary windings of the isolated driving transformer together with the gate positive voltage driving circuit and the gate negative voltage driving circuit complete the direct driving of the upper and lower bridge silicon carbide power devices. The silicon carbide power switching device driving circuit provided by the invention can provide a higher forward driving voltage and a lower reverse turn-off voltage to avoid crosstalk interference, the circuit is simple, the cost is low, the upper and lower arm bypass can be avoided, the primary and secondary electrical isolation can be avoided, and the reliability is high.

Description

technical field [0001] The invention relates to the field of power electronics technology and its application, in particular to a silicon carbide (SiC) power switching device drive circuit for a half-bridge or full-bridge topology power converter. Background technique [0002] The mature application of each new power device will promote the leapfrog development of the application field of power electronics technology. Silicon carbide (SiC) power device is a new type of power device with wide bandgap semiconductor. It has the advantages of high breakdown voltage, high thermal conductivity, strong junction temperature tolerance, small on-resistance, and fast switching speed. It has been favored by scholars and engineers. Concern, its mature application will surely promote the performance and efficiency of power conversion equipment (such as power electronic transformers, high-frequency switching power supplies, inverters, etc.) to be greatly improved. Like traditional power d...

AI Technical Summary

Problems solved by technology

Like traditional power devices such as MOSFETs and IGBTs, SiC power devices are also voltage-driven devices. In order to ensure reliable shutdown of power devices during work, we will apply a negative voltage to the power devices. The difference is that the shutdown of SiC power devices The negative voltage tolerance is small, no more than negative 10 volts, so some original mature driving circuits cannot be directly transplanted to drive SiC power devices

For this reason, scholars and engineers have designed some new driving circuits, but most of them have complex circuit structures and complex control methods, which lead to increased costs and reduced reliability; in addition, when driving each SiC power device in most of these solutions, it is necessary to Each SiC power device provides an independent power supply. When used in topologies such as half-bridge and full-bridge, multiple independent power supplies are required, which increases circuit complexity and cost.

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