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Method for preparing single-layer two-dimensional transition metal sulfide material

A transition metal and sulfide technology, applied in the field of preparing single-layer two-dimensional transition metal sulfide materials, can solve problems such as pollution, sample contamination, and excessive crystal nuclei

Active Publication Date: 2018-05-29
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Existing CVD prior art such as CN104384527A and CN106571244A etc. adopt the commonly used M precursor as a powder, and the precursor usually needs to be discarded once used, resulting in waste of resources and environmental pollution
In addition, since a certain amount of Ar / H needs to be introduced into the CVD system 2 Such as protective or reactive gases, the existence of powder may cause too many crystal nuclei or sample contamination in the prepared sample, resulting in the formation of monolayer MX 2 decline in sample quality

Method used

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  • Method for preparing single-layer two-dimensional transition metal sulfide material
  • Method for preparing single-layer two-dimensional transition metal sulfide material
  • Method for preparing single-layer two-dimensional transition metal sulfide material

Examples

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Effect test

Embodiment 1

[0026] use as figure 1 The CVD growth equipment, the components 1, 2, 3 and 4 in the figure, the areas 1 and 2 are the low temperature zone and the high temperature zone of CVD respectively, 1 is S powder or Se powder, 2 is metal foil, and 3 is sapphire substrate , 4 for Ar and H 2 of mixed gas.

[0027] A preparation of monolayer MoS 2 Methods. Include the following steps:

[0028] (1), at first, Mo metal foil is in the mixed solution of concentrated sulfuric acid and hydrogen peroxide (H 2 SO 4 :H 2 o 2 Volume ratio=2:1) ​​soaking for 2 hours, then place the Mo metal foil at 2 places in the high temperature zone 2 of the 2-inch quartz tube, raise the temperature to 400 °C at a speed of 40 °C / min, and conduct the M metal foil Normal pressure annealing treatment in air for 2 minutes to fully oxidize it to Mo oxide MoO 3-X ;

[0029] (2), put the cut 10*40mm single throwing quartz plate in the mixed solution of concentrated sulfuric acid and hydrogen peroxide (H 2 SO...

Embodiment 2

[0034] use as figure 1 The CVD growth equipment in the figure, components 1, 2, 3 and 4 in the figure, areas 1 and 2 are the low temperature zone and high temperature zone of CVD respectively, 1 is Se powder, 2 is metal foil, 3 is sapphire substrate, 4 is Ar and H 2 of mixed gas.

[0035] A preparation of monolayer WSe 2 Methods. Using the oxidized W foil as the W precursor and Se powder as the Se source, the triangular WSe with a side length of about 4.5 microns was prepared. 2 . Using optical microscope and Raman equipment to characterize the prepared samples, the results are as follows image 3 shown. The sample presents a very good triangular shape and is a monolayer WSe with good uniformity 2 Material. Specific steps are as follows:

[0036] (1), first, put W metal foil in the mixed solution of concentrated sulfuric acid and hydrogen peroxide (H 2 SO 4 :H 2 o 2 Volume ratio=2:1) ​​soaking for 2 hours, then place the W metal foil at 2 places in the high temper...

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Abstract

The invention belongs to the technical field of material preparation, and particularly relates to a method for preparing a single-layer two-dimensional transition metal sulfide material. An oxidized Mfoil is used as an M precursor for preparing a two-dimensional material by CVD (chemical vapor deposition), X powder serves as an X source, the single-layer two-dimensional material MX2 with good crystallinity is prepared by setting a high-temperature area and a low-temperature area for CVD and by the aid of specific heating and cooling procedures, and a new idea is provided for growth and preparation of later large-area two-dimensional materials.

Description

technical field [0001] The invention belongs to the technical field of material preparation, in particular to a method for preparing a single-layer two-dimensional transition metal sulfide material. Background technique [0002] With the continuous advancement of the post-Moore era, new two-dimensional materials have gradually become a research hotspot in recent years. The discovery and large-scale preparation and application of graphene have opened up ideas for people in the field of two-dimensional materials. Transition group sulfide MX 2 (M=Mo, W; X=S, Se) has a special layered structure, atoms are bonded by strong covalent bonds in the layer, and different layers are bonded by weak van der Waals force. When the thickness is When a single layer, the material exhibits special physical properties, from the indirect bandgap semiconductor of the bulk material to the direct bandgap semiconductor, making MX 2 It is expected to become an emerging semiconductor material after ...

Claims

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Application Information

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IPC IPC(8): C01G39/06C01G41/00C01B17/20C01B19/04
CPCC01B17/20C01B19/007C01G39/06C01G41/00C01P2002/82C01P2004/20
Inventor 时玉萌李贺楠姚慧珍陈龙龙
Owner SHENZHEN UNIV
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