Acidic texture surface making additive used for surface treatment of diamond wire sawn polycrystalline silicon wafer, and use method of the additive

A silicon wafer surface and diamond wire technology, applied in post-processing, post-processing details, polycrystalline material growth, etc., can solve the problems of high reflectivity, poor uniformity, and large suede surface size on the silicon wafer surface, and achieve the suede surface size Small and uniform, less environmental burden, good uniformity effect

Inactive Publication Date: 2018-06-01
DEQING LIJING ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the deionized acidic solution of nitric acid and hydrofluoric acid is commonly used in industrial production to make texture, but the texture effect of this kind of acid texture solution is not ideal,

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0010] Example 1

[0011] The acid texturing additive for surface treatment of polycrystalline diamond wire-cut silicon wafers according to the present invention and its use method adopt the following steps:

[0012] 1) Preparation of acid texturing additives: Dissolve 1.5g of oxalic acid, 2.5g of N-methylpyrrolidone, and 0.5g of polyethyleneimine into 100ml of deionized water;

[0013] 2) Preparation of acidic solution: Combine 150g of hydrofluoric acid (the mass percentage of hydrofluoric acid in the hydrofluoric acid aqueous solution is 40%) and 500g of nitric acid (the mass fraction of nitric acid in the nitric acid aqueous solution is 65%) and 350g of deionized water Mix and stir evenly;

[0014] 3) Preparation of acid texturing solution: add 10ml of the additives in step 1) to 1L of the acid solution in step 2);

[0015] 4) Texturing: immerse the polycrystalline diamond wire cut silicon wafer in the acid texturing solution in step 3), the texturing temperature is 5℃, and the text...

Example Embodiment

[0016] Example 2

[0017] The acid texturing additive for surface treatment of polycrystalline diamond wire-cut silicon wafers according to the present invention and its use method adopt the following steps:

[0018] 1) Preparation of acid texturing additives: Dissolve 0.5g oxalic acid, 5g N-methylpyrrolidone, 1.5g vinylpyrrolidone-vinylpyridine copolymer into 100ml deionized water;

[0019] 2) Preparation of acidic solution: 200g of hydrofluoric acid (the mass percentage of hydrofluoric acid in the hydrofluoric acid aqueous solution is 40%) and 600g of nitric acid (the mass fraction of nitric acid in the nitric acid aqueous solution is 65%) and 200g of deionized water Mix and stir evenly;

[0020] 3) Preparation of acid texturing solution: add 20ml of the additives in step 1) to 1L of the acid solution in step 2);

[0021] 4) Texturing: immerse the polycrystalline diamond wire cut silicon wafer in the acid texturing solution in step 3), the texturing temperature is 7℃, and the texturi...

Example Embodiment

[0022] Example 3

[0023] The acid texturing additive for surface treatment of polycrystalline diamond wire-cut silicon wafers according to the present invention and its use method adopt the following steps:

[0024] 1) Preparation of acid texturing additives: Dissolve 5g oxalic acid, 10g N-methylpyrrolidone, 1.0g polyvinylamine into 100ml deionized water;

[0025] 2) Preparation of acidic solution: 130g hydrofluoric acid (the mass percentage of hydrofluoric acid in the hydrofluoric acid aqueous solution is 40%) and 700g of nitric acid (the mass fraction of nitric acid in the nitric acid aqueous solution is 65%) and 270g deionized water Mix and stir evenly;

[0026] 3) Preparation of acid texturing solution: add 5ml of the additives in step 1) to 1L of the acid solution in step 2);

[0027] 4) Texturing: immerse the polycrystalline diamond wire cut silicon wafer in the acid texturing solution in step 3), the texturing temperature is 5℃, and the texturing time is 240s.

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Abstract

The invention discloses an acidic texture surface making additive used for surface treatment of a diamond wire sawn polycrystalline silicon wafer, which includes, by weight, 0.5-5% of oxalic acid, 1-10% of N-methylpyrrolidone, 0.1-3% of a nitrogen-containing polymer and the balanced being water. The invention also discloses an acidic texture surface making agent used for surface treatment of the diamond wire sawn polycrystalline silicon wafer, which includes the acidic texture surface making additive and an acid solution being a deionized water solution of hydrofluoric acid and nitric acid, wherein the weight percentage of the hydrofluoric acid is 5-10% and the weight percentage of the nitric acid is 20-60%. The invention also includes a method for surface treatment of the diamond wire sawn polycrystalline silicon wafer. The additive is toxic-free and non-irritation, has no corrosion, is reduced in usage amount of inorganic acid, and can reduce environment load. The diamond wire sawn polycrystalline silicon wafer treated by the additive and through the use method has good uniformity, has fine and uniform texture size and is low in reflectivity.

Description

technical field [0001] The invention relates to an acidic texturing additive used for surface treatment of polycrystalline diamond wire-cut silicon wafers, a method for using the additive, and a method for using the additive to texture polycrystalline diamond wire-cut silicon wafers. Background technique [0002] During the preparation of polycrystalline silicon solar cells, it is necessary to make texture on the surface of polycrystalline diamond wire cut silicon wafers. The resulting textured structure can make incident sunlight reflect and refract multiple times on the surface of silicon wafers, increasing the absorption of solar energy by silicon wafers. At the same time, more carriers are generated and enriched in the area near the PN junction to improve the performance and efficiency of the solar cell. It can be seen that the surface texture treatment of polycrystalline diamond wire cut silicon wafers is a key factor affecting the performance of polycrystalline silicon...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/06H01L31/18
CPCC30B29/06C30B33/10H01L31/18Y02P70/50
Inventor 姜翰钦吴金丹周小国
Owner DEQING LIJING ENERGY TECH CO LTD
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