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RC-IGBT (reverse conducting-insulated gate bipolar transistor) device and preparation method thereof

A device and semiconductor technology, applied in the field of reverse-conducting insulated gate bipolar transistor devices and their preparation, can solve the problems of uneven current distribution in the drift region, poor reverse recovery capability of diodes, and increased on-state voltage drop, etc. Achieve the effect of optimizing forward conduction characteristics, improving anti-latch capability, and reducing forward conduction voltage drop

Active Publication Date: 2018-06-05
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above, the present invention aims at the voltage snapback (VoltageSnapback) existing in the traditional silicon-based RC-IGBT, the conduction voltage drop increases, the current distribution in the drift region is uneven, the heat distribution is uneven, and the reverse recovery capability of the diode is poor. Problem, a RC-IGBT device with a heterojunction structure and its preparation method are proposed. In the traditional RC-IGBT device, semiconductor materials with different band gaps are used, so that the band gap of the material in the collector short-circuit region is larger than that of the corresponding The forbidden band width of the contacted semiconductor material forms a heterojunction structure with rectification characteristics, thereby suppressing the voltage foldback phenomenon, optimizing the current distribution and thermal distribution in the drift region, and improving the reverse recovery and reliability of the device

Method used

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  • RC-IGBT (reverse conducting-insulated gate bipolar transistor) device and preparation method thereof
  • RC-IGBT (reverse conducting-insulated gate bipolar transistor) device and preparation method thereof
  • RC-IGBT (reverse conducting-insulated gate bipolar transistor) device and preparation method thereof

Examples

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Embodiment 1

[0057] A kind of RC-IGBT device, its cell structure is like Figure 4 As shown, it includes: an N-type silicon drift region 4, an emitter structure and a gate structure located on the upper layer of the N-type silicon drift region 4, and a collector structure located on the lower layer of the N-type silicon drift region 4; the emitter structure includes a metal emitter Pole 8, N+ silicon emitter region 9, P+ silicon contact region 10 and P-type silicon base region 11, said P-type silicon base region 11 is located on top of N-type silicon drift region 4, and said N+ silicon emitter region 9 is located on P-type silicon On both sides of the top of the base region 11, the P+ silicon contact region 10 is located between and connected to the N+ silicon emitter region 9, and the metal emitter 8 is located on the upper surface of the N+ silicon emitter region 9 and the P+ silicon contact region 10; The gate structure includes a metal gate electrode 1, polysilicon 2 and a gate dielectri...

Embodiment 2

[0061] The difference between this embodiment and Embodiment 1 lies in: the number of P-type silicon collector short-circuit regions 6 and N-type silicon carbide collector short-circuit regions 13 are different; in this embodiment, the N-type silicon carbide collector short-circuit regions 13 and The number of P-type silicon collector regions 6 is not less than two, and a plurality of N-type silicon carbide collector short-circuit regions 13 and a plurality of P-type silicon collector regions 6 are arranged at intervals, such as Figure 5 Shown.

[0062] Compared with Example 1, because the current is far away from the collector short-circuit area, the current needs to pass through a lateral resistance to reach the collector short-circuit area, and because the Si / SiC heterojunction is evenly distributed at the metal collector 7 and the interval is small, it reduces The resistance value of the lateral resistance formed by the RC-IGBT above the P-type silicon collector region 6, the...

Embodiment 3

[0064] This embodiment is different from embodiment 1 in that: the N-type silicon carbide collector short-circuit area 13 is formed by using graded doping; the graded doping in this embodiment specifically refers to the N-type silicon carbide collector short-circuit area 13 The doping concentration gradually decreases from top to bottom (that is, the doping concentration ranges from the junction surface of the N-type silicon field resistance layer 5 and the N-type silicon carbide collector short-circuit region 13 to the N-type silicon carbide collector short-circuit region 13 and the metal collection The direction of the interface of the electrode 7 gradually decreases).

[0065] Such as Figure 7 Shown is the energy band diagram of the n-Si / N-SiC heterojunction formed by the gradually doped N-type silicon carbide collector short-circuit region 13 and the N-type silicon field stop layer 5. Compared with embodiment 1, the additional electronic barrier provided by this embodiment f...

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Abstract

The invention discloses an RC-IGBT (reverse conducting-insulated gate bipolar transistor) device and a preparation method of the device and belongs to the technical field of semiconductor power devices. A semiconductor material with a different energy gap is adopted in the traditional RC-IGBT device to form a collector short circuit region; an energy gap of a material of the collector short circuit region is larger than that of a semiconductor material contacted with the material, so that a heterojunction structure with a rectification characteristic is formed; a single cellular structure caneliminate voltage snapback in a positive onset process of the traditional RC-IGBT; current distribution and thermal distribution in a drift region are optimized at the same time; the issue of reliability caused by current concentration and thermal concentration is avoided; and the reverse recovery ability of the device is improved. Further, an emitting region is formed by a semiconductor materialwith a different energy gap; and the energy gap of the emitting region is larger than that of the semiconductor material contacted with the emitting region, so that the latch-up resistance of the device is improved.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor power devices, and particularly relates to a reverse conducting insulated gate bipolar transistor (Reverse Conducting Insulated Gate Bipolar Transistors, RC-IGBTs) device and a preparation method thereof. Background technique [0002] With the continuous expansion of the depth and breadth of the human industrial revolution, people continue to face various crises while enjoying the convenience brought by the fruits of industrialization. As the "blood" of industry, the sustainable utilization of energy resources has always been valued by countries all over the world. The increasing consumption of energy resources also makes people feel the "energy crisis". While seeking new energy as a substitute for fossil energy, people are also thinking about how to maximize energy utilization. Electricity is the main energy that humans can directly use, and the power system that manages electric energy is a k...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L21/331
CPCH01L29/66325H01L29/7393
Inventor 张金平邹华罗君轶赵倩刘竞秀李泽宏张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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