Preparation method of GaN-based transfer substrate of LED (light-emitting diode) device in vertical structure

Abstract

The invention discloses a preparation method of a GaN-based transfer substrate of an LED (light-emitting diode) device in a vertical structure. The preparation method comprises the steps of sequentially putting a sample, namely GaN growing on a sapphire substrate, in a first metal plating tank, a second metal plating tank, a third metal plating tank, the second metal plating tank, the first metalplating tank, the second metal plating tank and the third metal plating tank for plating, wherein a metal in the first metal plating tank is one of cuprum, cobalt, palladium, gold and silver; a metalin the second metal plating tank is nickel or tungsten; and a metal in the third metal plating tank is one of platinum, aluminum, chromium and titanium. The method improves density of a plated metal;multiple metal alloys contribute to adjusting a support degree of the LED device in the vertical structure and the substrate; the connection strength between the plated metal and a GaN film is improved; and an ageing characteristic of the LED device in the vertical structure is improved.

Description

technical field [0001] The invention relates to a preparation method of a vertical structure LED device transfer substrate, in particular to a preparation method of a GaN-based vertical structure LED electroplated metal substrate. Background technique [0002] The Ⅲ / Ⅴ nitride mainly composed of GaN, InGaN, and AlGaN is a semiconductor material that has attracted much attention in recent years. It has a continuously variable direct bandgap of 1.9-6.2eV, excellent physical and chemical stability, and high saturation electron migration. High efficiency and other characteristics make it the most preferred material for optoelectronic devices such as lasers and light-emitting diodes. [0003] However, due to the limitations of GaN's own growth technology, most of today's large-area GaN materials are grown on sapphire substrates. Although the GaN grown on the sapphire substrate is of high quality and the most widely used, due to the non-conductivity of sapphire, the LED device on ...

AI Technical Summary

Problems solved by technology

The commonly used method of adjusting stress in electroplating is to adjust the stress of the electroplating metal by adjusting the current and the concentration of the electroplating solution. For devices, the self-supporting ability of the supporting substrate and the metal quality are relatively high, so the above method cannot be directly used as an electroplating process in the manufacture of vertical structure LED devices.