Preparation method of GaN-based transfer substrate of LED (light-emitting diode) device in vertical structure

Abstract

The invention discloses a preparation method of a GaN-based transfer substrate of an LED (light-emitting diode) device in a vertical structure. The preparation method comprises the steps of sequentially putting a sample, namely GaN growing on a sapphire substrate, in a first metal plating tank, a second metal plating tank, a third metal plating tank, the second metal plating tank, the first metalplating tank, the second metal plating tank and the third metal plating tank for plating, wherein a metal in the first metal plating tank is one of cuprum, cobalt, palladium, gold and silver; a metalin the second metal plating tank is nickel or tungsten; and a metal in the third metal plating tank is one of platinum, aluminum, chromium and titanium. The method improves density of a plated metal;multiple metal alloys contribute to adjusting a support degree of the LED device in the vertical structure and the substrate; the connection strength between the plated metal and a GaN film is improved; and an ageing characteristic of the LED device in the vertical structure is improved.

Description

technical field

[0001] The invention relates to a preparation method of a vertical structure LED device transfer substrate, in particular to a preparation method of a GaN-based vertical structure LED electroplated metal substrate. Background technique

[0002] The Ⅲ / Ⅴ nitride mainly composed of GaN, InGaN, and AlGaN is a semiconductor material that has attracted much attention in recent years. It has a continuously variable direct bandgap of 1.9-6.2eV, excellent physical and chemical stability, and high saturation electron migration. High efficiency and other characteristics make it the most preferred material for optoelectronic devices such as lasers and light-emitting diodes.

[0003] However, due to the limitations of GaN's own growth technology, most of today's large-area GaN materials are grown on sapphire substrates. Although the GaN grown on the sapphire substrate is of high quality and the most widely used, due to the non-conductivity of sapphire, the LED device on ...

Examples

Embodiment 1

[0017] Embodiment 1, a method for preparing a GaN-based vertical structure LED device transfer substrate, the sample is GaN grown on a sapphire substrate, which includes the following steps,

[0018] (1) First put the sample into a copper electroplating pool for electroplating; the current for electroplating is 1A, and the thickness of the electroplating metal layer is 10 microns. (2) Put the sample after the electroplated copper layer into the nickel electroplating pool for electroplating; the current for electroplating is 10A, and the thickness of the electroplated metal layer is 25 microns. (3) Put the sample after electroplating two metal layers of copper and nickel into a titanium electroplating pool for electroplating; the current for electroplating is 3A, and the thickness of the electroplating metal layer is 20 microns. (4) Put the sample after electroplating the copper-nickel-titanium three-layer metal layer into the nickel electroplating pool for electroplating; the ...

Embodiment 2

[0019] Embodiment 2, a method for preparing a GaN-based vertical structure LED device transfer substrate, the sample is GaN grown on a sapphire substrate, which includes the following steps,

[0020] (1) First put the sample into a cobalt electroplating pool for electroplating; the current for electroplating is 10A, and the thickness of the electroplating metal layer is 15 microns. (2) Put the sample after electroplating the cobalt layer into the tungsten electroplating pool for electroplating; the current for electroplating is 2A, and the thickness of the electroplating metal layer is 15 microns. (3) Put the sample after electroplating two metal layers of cobalt and tungsten into a platinum electroplating pool for electroplating; the current for electroplating is 15A, and the thickness of the electroplating metal layer is 25 microns. (4) Put the sample electroplated with three metal layers of cobalt, tungsten and platinum into a tungsten electroplating pool for electroplating...

Embodiment 3

[0021] Embodiment 3, a method for preparing a GaN-based vertical structure LED device transfer substrate, the sample is GaN grown on a sapphire substrate, which includes the following steps,

[0022] (1) At first the sample is put into a palladium electroplating pool for electroplating; the current for electroplating is 8A, and the thickness of the electroplating metal layer is 13 microns. (2) Put the sample after the electroplating palladium layer into the nickel electroplating pool for electroplating; the electric current for electroplating is 20A, and the thickness of the electroplating metal layer is 20 microns. (3) Put the sample after electroplating palladium-nickel two-layer metal layer into the aluminum electroplating tank for electroplating; the current for electroplating is 10A, and the thickness of the electroplating metal layer is 30 microns. (4) Put the sample after the electroplating palladium-nickel-aluminum three-layer metal layer into the nickel electroplating...

technical field

[0001] The invention relates to a preparation method of a vertical structure LED device transfer substrate, in particular to a preparation method of a GaN-based vertical structure LED electroplated metal substrate. Background technique

[0002] The Ⅲ / Ⅴ nitride mainly composed of GaN, InGaN, and AlGaN is a semiconductor material that has attracted much attention in recent years. It has a continuously variable direct bandgap of 1.9-6.2eV, excellent physical and chemical stability, and high saturation electron migration. High efficiency and other characteristics make it the most preferred material for optoelectronic devices such as lasers and light-emitting diodes.

[0003] However, due to the limitations of GaN's own growth technology, most of today's large-area GaN materials are grown on sapphire substrates. Although the GaN grown on the sapphire substrate is of high quality and the most widely used, due to the non-conductivity of sapphire, the LED device on ...

Examples

Embodiment 1

[0017] Embodiment 1, a method for preparing a GaN-based vertical structure LED device transfer substrate, the sample is GaN grown on a sapphire substrate, which includes the following steps,

[0018] (1) First put the sample into a copper electroplating pool for electroplating; the current for electroplating is 1A, and the thickness of the electroplating metal layer is 10 microns. (2) Put the sample after the electroplated copper layer into the nickel electroplating pool for electroplating; the current for electroplating is 10A, and the thickness of the electroplated metal layer is 25 microns. (3) Put the sample after electroplating two metal layers of copper and nickel into a titanium electroplating pool for electroplating; the current for electroplating is 3A, and the thickness of the electroplating metal layer is 20 microns. (4) Put the sample after electroplating the copper-nickel-titanium three-layer metal layer into the nickel electroplating pool for electroplating; the ...

Embodiment 2

[0019] Embodiment 2, a method for preparing a GaN-based vertical structure LED device transfer substrate, the sample is GaN grown on a sapphire substrate, which includes the following steps,

[0020] (1) First put the sample into a cobalt electroplating pool for electroplating; the current for electroplating is 10A, and the thickness of the electroplating metal layer is 15 microns. (2) Put the sample after electroplating the cobalt layer into the tungsten electroplating pool for electroplating; the current for electroplating is 2A, and the thickness of the electroplating metal layer is 15 microns. (3) Put the sample after electroplating two metal layers of cobalt and tungsten into a platinum electroplating pool for electroplating; the current for electroplating is 15A, and the thickness of the electroplating metal layer is 25 microns. (4) Put the sample electroplated with three metal layers of cobalt, tungsten and platinum into a tungsten electroplating pool for electroplating...

Embodiment 3

[0021] Embodiment 3, a method for preparing a GaN-based vertical structure LED device transfer substrate, the sample is GaN grown on a sapphire substrate, which includes the following steps,

[0022] (1) At first the sample is put into a palladium electroplating pool for electroplating; the current for electroplating is 8A, and the thickness of the electroplating metal layer is 13 microns. (2) Put the sample after the electroplating palladium layer into the nickel electroplating pool for electroplating; the electric current for electroplating is 20A, and the thickness of the electroplating metal layer is 20 microns. (3) Put the sample after electroplating palladium-nickel two-layer metal layer into the aluminum electroplating tank for electroplating; the current for electroplating is 10A, and the thickness of the electroplating metal layer is 30 microns. (4) Put the sample after the electroplating palladium-nickel-aluminum three-layer metal layer into the nickel electroplating...