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Silicon controlled rectifier device and preparation method thereof

A technology of silicon devices and conductive types, which is applied in the field of thyristor devices and its preparation, can solve the problems of large isolation area, poor product consistency, and restrictions on the improvement and upgrading of thyristor device products, so as to reduce the device area and improve The effect of flexible manufacturing capability, device consistency and yield improvement

Active Publication Date: 2018-06-08
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing mass-produced thyristor device technology is based on deep diffusion and mesa technology, the isolation area is large, the product consistency is poor, and the process is also easy to introduce contamination (such as double-sided P-type deep junction diffusion of aluminum impurities and high-voltage protection rings). Using mesa structure and glass passivation process), it is not suitable for manufacturing with more advanced 8-inch and above chip process lines, and it also restricts the improvement and upgrading of existing thyristor device products. unexpected

Method used

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  • Silicon controlled rectifier device and preparation method thereof
  • Silicon controlled rectifier device and preparation method thereof
  • Silicon controlled rectifier device and preparation method thereof

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Embodiment 1

[0053] like figure 1 As shown, this embodiment relates to a thyristor device, specifically, the thyristor device includes: a substrate of a first conductivity type (such as an N-type substrate) 100 provided with a front surface and a back surface opposite to the front surface, and The first conductivity type substrate 100 is provided with a second conductivity type isolation region 101 (such as a P-type isolation region), which is arranged on the front surface of the first conductivity type substrate 100, and the upper surface of the second conductivity type isolation region 101 The second conductivity type epitaxial layer (such as P-type epitaxial layer) 102 to be covered, the second conductivity type anode disposed on the back surface of the first conductivity type substrate 100, and covering the lower surface of the second conductivity type isolation region 101 layer (such as P-type anode layer) 103, a deep trench structure 105 disposed in the substrate 100 of the first con...

Embodiment 2

[0061] like figure 2 As shown, the present invention also discloses a method for preparing a thyristor device, specifically, the method includes the following steps:

[0062] Step S1, providing a substrate 200 of a first conductivity type (such as an N-type substrate), and the substrate 200 of the first conductivity type has a front surface and a back surface opposite to the front surface, such as image 3 structure shown.

[0063] In a preferred embodiment of the present invention, the above-mentioned first conductivity type substrate 200 has a thickness of 350-600 μm (eg 350 μm, 400 μm, 500 μm or 600 μm, etc.).

[0064] Step S2, etching the substrate 200 of the first conductivity type from the front surface of the substrate 200 of the first conductivity type to form a plurality of first deep trenches 201, such as Figure 4 structure shown; and fill the second conductivity type silicon layer 202 (for example, P-type silicon layer) in several first deep trenches 201, as F...

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Abstract

The invention relates to the field of the semiconductor manufacturing technology, in particular to a silicon controlled rectifier device and a preparation method thereof. With methods like deep trenchetching and epitaxy, the device area is reduced and the device consistency and yield are increased. Moreover, because of utilization of the modern conventional process module technology, collinear production of the silicon controlled rectifier device, the integrated circuit chip, and other power devices like an MOSFET and an IGBT is realized, so that the flexible manufacturing capability of the production line of the modern chips with the sizes of 8 inches or above is enhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a thyristor device and a preparation method thereof. Background technique [0002] Thyristor, the abbreviation of silicon controlled rectifier element, is a high-power semiconductor device with a four-layer structure of three PN junctions, also known as a thyristor. With the characteristics of small size, relatively simple structure, and strong functions, it is one of the more commonly used semiconductor devices. The device is widely used in various electronic equipment and electronic products, and is mostly used for controllable rectification, inverter, frequency conversion, voltage regulation, non-contact switch, etc. Dimming lamps, speed-adjusting fans, air conditioners, televisions, refrigerators, washing machines, cameras, combined audio systems, sound and light circuits, timing controllers, toy devices, radio remote controls, cameras and industrial cont...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/74H01L21/332
CPCH01L29/0684H01L29/66363H01L29/74
Inventor 龚大卫
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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