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Substrate processing apparatus and methods

A substrate processing system and processor technology, applied in cleaning methods and utensils, chemical instruments and methods, discharge tubes, etc.

Active Publication Date: 2018-06-08
APPLIED MATERIALS INC
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  • Abstract
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Problems solved by technology

However, the inventors have observed that current fixed position resonator inductive circuits can only be tuned to a single position for a given configuration

Method used

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  • Substrate processing apparatus and methods
  • Substrate processing apparatus and methods

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Embodiment Construction

[0014] Apparatus for processing substrates is disclosed herein. Embodiments of the apparatus of the present invention dynamically adjust two discordant gases in a plasma for cleaning a substrate disposed in the apparatus. For example, two gas treatment methods can be advantageously used to remove native or process-generated oxides and other defects, such as etch residues, oxides, or the like, without damaging the interlayer dielectric (ILD ) substrate. Embodiments of the inventive apparatus can be used to clean suitable substrates with imperfections, eg, substrates with low contact resistance material that have been exposed under an ILD during a mask / dielectric etch process. For example, substrates may be cleaned in the apparatus of the invention to remove etch residues, native or process-generated oxides and other defects or the like, to expose metal surfaces during middle end of line (MEOL) processing, to A metal interconnect structure is formed.

[0015] figure 1 A sche...

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Abstract

Apparatus and methods for processing substrates are disclosed. In some embodiments, a substrate processing system includes: a process chamber defining an interior volume for receiving a substrate andhaving a plasma forming zone, a substrate support positioned within the interior volume, a resonator coil disposed proximate the plasma forming zone, and a resonant inductor tuning circuit configuredto vary an RF feed point location along the resonator coil. A method of operating a substrate processing system, according to embodiments, includes: transferring a substrate to a substrate support disposed within an interior volume of a processing chamber, the interior volume having a plasma forming zone, and operating a resonant inductor tuning circuit to couple an RF power source to a first RF feed point of a plurality of RF feed points along a resonator coil disposed proximate the plasma forming zone.

Description

technical field [0001] Embodiments of the present disclosure relate generally to substrate processing systems, and more particularly, to plasma enhanced substrate processing systems. Background technique [0002] Conventional chemical vapor deposition (CVD), physical vapor deposition (PVD) and other techniques are used to electrically deposit conductive material into contact holes, vias, trenches or other patterns formed on the substrate. The presence of native or process-generated oxides and other contaminants in features can frequently create voids by contributing to uneven distribution of deposited metal. Residual oxide typically forms as a result of exposing the exposed thin film layer / substrate to oxygen or as a by-product of wafer processing. Exposure to oxygen may occur, for example, when moving substrates between processing chambers under atmospheric conditions, or may occur when small amounts of oxygen left in a vacuum chamber contact the substrate / film layer, or m...

Claims

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Application Information

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IPC IPC(8): H01J37/32
CPCH01J37/321H01J37/32174H01J37/32926H01L21/02068H01J37/3211H01J37/32458B08B7/0035H01J37/32082H01J2237/334H01J2237/335H01L21/67028
Inventor 布伦特·比格斯仓富隆
Owner APPLIED MATERIALS INC
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